A semiconductor wafer comprises a substrate wafer of monocrystalline silicon and a dopant-containing epitaxial layer of monocrystalline silicon atop the substrate wafer, wherein a non-uniformity of the thickness of the epitaxial layer is not more than 0.5% and a non-uniformity of the specific electrical resistance of the epitaxial layer is not more than 2%.

Systems and methods related to temperature zone control systems can include a reactant source cabinet that is configured to be at least partially evacuated, a vessel base that is configured to hold solid source chemical reactant therein, and a lid that is coupled to a distal portion of the vessel base. The lid may include one or more lid valves. The system may further include a plurality of gas panel valves that are configured to deliver gas from a gas source to the vessel. The system may include a heating element that is configured to heat the one or more lid valves. The system may include a heat shield, a first portion of which is disposed between the one or more lid valves and the vessel base. A second portion of the heat shield may be disposed between the first heating element and the plurality of gas panel valves.

A reflector includes a reflector body arranged to overlap a reaction chamber of a semiconductor processing system. The reflector body has a grooved surface and a reflective surface extending between a first longitudinal edge of the reflector body and a second longitudinal edge of the reflector body, the reflective surface spaced apart from the grooved surface by a thickness of the reflector body. The grooved surface and the reflective surface define a pyrometer port, two or more elongated slots, and two or more shortened extending through the thickness of the reflector body. The shortened slots outnumber the elongated slots to bias issue of a coolant against the reaction chamber toward the second longitudinal edge of the reflector body. Cooling kits, semiconductor processing systems, and methods of cooling a reaction chamber during deposition of a film onto a substrate supported within the reaction chamber are also described.

A film forming apparatus and a film forming apparatus usage. The film forming apparatus has a film forming chamber, a substrate retaining part, a heating unit, a shower head, and a physical characteristics detector. The physical characteristics detector includes an irradiation part that irradiates a film formed on a surface of a substrate with a beam, a receiver to receive the beam reflected by the film, and a detection unit that detects physical characteristics of the film based on the beam received by the receiver. The shower head includes a supply plane facing the film forming plane, multiple discharge outlets provided in the supply plane, a main body to transport source gas to the multiple discharge outlets, a first transmissive part that transmits the beam emitted by the irradiation part, and a second transmissive part that transmits the reflected beam and is located at a different position than the first transmissive part.

The system and method includes the suspension of a free-standing carbon article within a reaction chamber, the introduction of the chemical precursor in a reaction environment within the chamber, and heating of the carbon article in the presence of the chemical precursor leading to deposition in a site-specific manner.

This invention relates to a method for synthesizing polyoxymethylene on a substrate. The method includes depositing monomer capable of forming polyoxymethylene by an initiated polymerization reaction and an initiator, via initiated chemical vapor deposition (iCVD) onto a surface of a substrate in an initiated chemical vapor deposition reactor.

Embodiments described herein generally relate to apparatus for fabricating semiconductor devices. A gas injection apparatus is coupled to a first gas source and a second gas source. Gases from the first gas source and second gas source may remain separated until the gases enter a process volume in a process chamber. A coolant is flowed through a channel in the gas injection apparatus to cool the first gas and the second gas in the gas injection apparatus. The coolant functions to prevent thermal decomposition of the gases by mitigating the influence of thermal radiation from the process chamber. In one embodiment, the channel surrounds a first conduit with the first gas and a second conduit with the second gas.

Methods of processing a semiconductor substrate and apparatus to process semiconductor substrates are described. The methods and apparatus described enable the repetitive cyclic low temperature application of a chemistry and high temperature treatment step to a substrate.

A method of fabricating a semiconductor device includes providing a system that includes a susceptor configured to retain a semiconductor substrate, a heating element, and a reflector integrated with the heating element, where the reflector includes a surface defined by a plurality of circumferential ridges having a separation distance that varies from a top portion of the reflector to a bottom portion of the reflector. The method further includes heating the semiconductor substrate and forming an epitaxial layer on the heated semiconductor substrate, where the heating includes emitting thermal energy from the heating element and reflecting the thermal energy from the surface of the reflector onto the semiconductor substrate, where an amount of the thermal energy received by an edge of the semiconductor substrate is more than an amount of the thermal energy received by a center of the semiconductor substrate.

An assembly includes a vaporizer vessel. In some embodiments, the vaporizer vessel defines an interior volume. In some embodiments, the vaporizer vessel is configured to hold at least one source reagent within the interior volume. In some embodiments, the assembly includes a heater. In some embodiments, the heater is configured to vaporize the at least one source reagent. In some embodiments, the heater is a radiant heat source configured to vaporize the at least one source reagent without heating the vaporizer vessel.