The present application discloses a vapor deposition apparatus, including: a reaction chamber, a gas spraying device, and a cleaning gas channel, wherein the gas spraying device includes a reaction gas channel, and the reaction gas channel includes an outlet communicating with the reaction chamber; and the cleaning gas channel is spaced apart from the reaction gas channel, such that the probability of generating the residual produce in the reaction chamber can be reduced, and the uniformity of film formation and the utilization rate of the machine are improved.

The present application discloses a vapor deposition apparatus, including: a reaction chamber, a gas spraying device, and a cleaning gas channel, wherein the gas spraying device includes a reaction gas channel, and the reaction gas channel includes an outlet communicating with the reaction chamber; and the cleaning gas channel is spaced apart from the reaction gas channel, such that the probability of generating the residual produce in the reaction chamber can be reduced, and the uniformity of film formation and the utilization rate of the machine are improved.

The invention relates to a device 10 for holding workpieces 30 in a process chamber. The invention additionally relates to a coating system 20 and to a method for coating a workpiece 30. In order to allow for precise adjustment of the height of the position of workpieces 30 while supporting same in a secure and stable manner, the holding device 10 comprises a tray 72 for the workpieces 30, a height-adjustable first support element 22 and a height-adjustable second support element 48 for the tray 72, wherein each of the support elements 22, 48 comprises at least one first and one second limb element 26, 56, wherein the respective first and the respective second limb element 26, 56 are coupled so as to be pivotable relative to one another about a pivot axis X, Y, and wherein the pivot axis X of the first support element 22 is arranged at an angle to the pivot axis Y of the second support element 48.

The invention relates to a device 10 for holding workpieces 30 in a process chamber. The invention additionally relates to a coating system 20 and to a method for coating a workpiece 30. In order to allow for precise adjustment of the height of the position of workpieces 30 while supporting same in a secure and stable manner, the holding device 10 comprises a tray 72 for the workpieces 30, a height-adjustable first support element 22 and a height-adjustable second support element 48 for the tray 72, wherein each of the support elements 22, 48 comprises at least one first and one second limb element 26, 56, wherein the respective first and the respective second limb element 26, 56 are coupled so as to be pivotable relative to one another about a pivot axis X, Y, and wherein the pivot axis X of the first support element 22 is arranged at an angle to the pivot axis Y of the second support element 48.

Disclosed is a plasma surface treatment apparatus for conductive powder. The plasma surface treatment apparatus for conductive powder comprises: a reaction chamber including a linear gas inlet at the lower end thereof and a gas outlet at the upper end thereof, and having a vertical cross section that is funnel-shaped; and a plasma jet generation device that is located below the linear gas inlet and is configured to discharge a plasma jet into the reaction chamber from below in an upward direction through the linear gas inlet, wherein powder is accommodated in the reaction chamber and is treated by plasma while buoyed by the plasma jet.

Disclosed is a plasma surface treatment apparatus for conductive powder. The plasma surface treatment apparatus for conductive powder comprises: a reaction chamber including a linear gas inlet at the lower end thereof and a gas outlet at the upper end thereof, and having a vertical cross section that is funnel-shaped; and a plasma jet generation device that is located below the linear gas inlet and is configured to discharge a plasma jet into the reaction chamber from below in an upward direction through the linear gas inlet, wherein powder is accommodated in the reaction chamber and is treated by plasma while buoyed by the plasma jet.

The present disclosure provides an electrode support, a supporting mechanism, a support, a film coating apparatus, and an application. The electrode support is applied to the film coating apparatus. The film coating apparatus allows coating of at least one to-be-coated workpiece. The film coating apparatus comprises a reaction chamber and a pulse power supply; the pulse power supply is used for providing a pulse electric field in the reaction chamber. The electrode support comprises support members arranged in multiple layers; the support member of each layer is separately retained at a preset spacing; at least one layer of the support member is conductively connected to the pulse power supply to serve as a negative electrode of the pulse power supply. The electrode support can uniformly load the to-be-coated workpiece and can be used as an electrode, and wiring between the electrode support and an external power supply is simple.

The present disclosure provides an electrode support, a supporting mechanism, a support, a film coating apparatus, and an application. The electrode support is applied to the film coating apparatus. The film coating apparatus allows coating of at least one to-be-coated workpiece. The film coating apparatus comprises a reaction chamber and a pulse power supply; the pulse power supply is used for providing a pulse electric field in the reaction chamber. The electrode support comprises support members arranged in multiple layers; the support member of each layer is separately retained at a preset spacing; at least one layer of the support member is conductively connected to the pulse power supply to serve as a negative electrode of the pulse power supply. The electrode support can uniformly load the to-be-coated workpiece and can be used as an electrode, and wiring between the electrode support and an external power supply is simple.

Methods of forming a silicon oxycarbide layer on a surface of a substrate are disclosed. Exemplary methods include providing an oxygen-free reactant to a reaction chamber and performing one or more deposition cycles, wherein each deposition cycle includes providing a silicon precursor to the reaction chamber for a silicon precursor pulse period and providing pulsed plasma power for a plasma power period to form the silicon oxycarbide layer.

Methods of forming a silicon oxycarbide layer on a surface of a substrate are disclosed. Exemplary methods include providing an oxygen-free reactant to a reaction chamber and performing one or more deposition cycles, wherein each deposition cycle includes providing a silicon precursor to the reaction chamber for a silicon precursor pulse period and providing pulsed plasma power for a plasma power period to form the silicon oxycarbide layer.