Provided is a system for stabilizing a flow of gas introduced into a sensor, wherein, in connection with manufacturing equipment comprising a process chamber, a process chamber vacuum pump installed to remove internal gas of the process chamber, and a sensor device configured to be able to receive the internal gas of the process chamber through a sensor connecting pipe and to detect components thereof, the system comprises a sensor connecting pipe and a bypass pipe branching off from the sensor connecting pipe such that a part of the gas can be directly discharged to the outside without being introduced into the sensor, and the system is accordingly configured to stably provide the sensor device with a part of the internal gas within a predetermined range per time, regardless of a change in the pressure state of the process chamber.

Provided is a system for stabilizing a flow of gas introduced into a sensor, wherein, in connection with manufacturing equipment comprising a process chamber, a process chamber vacuum pump installed to remove internal gas of the process chamber, and a sensor device configured to be able to receive the internal gas of the process chamber through a sensor connecting pipe and to detect components thereof, the system comprises a sensor connecting pipe and a bypass pipe branching off from the sensor connecting pipe such that a part of the gas can be directly discharged to the outside without being introduced into the sensor, and the system is accordingly configured to stably provide the sensor device with a part of the internal gas within a predetermined range per time, regardless of a change in the pressure state of the process chamber.

A reactor system comprises a process chamber, a gas inlet, and a dispenser. The dispenser is coupled to the gas inlet. The dispenser controls a gas flow from a vial to the gas inlet. The vial includes a coating material that, when released inside the process chamber under operating conditions of the reaction system, coats an inner wall of the process chamber.

A reactor system comprises a process chamber, a gas inlet, and a dispenser. The dispenser is coupled to the gas inlet. The dispenser controls a gas flow from a vial to the gas inlet. The vial includes a coating material that, when released inside the process chamber under operating conditions of the reaction system, coats an inner wall of the process chamber.

The disclosure relates to a sequential infiltration synthesis apparatus comprising: a reaction chamber constructed and arranged to accommodate at least one substrate; a first precursor flow path to provide the first precursor to the reaction chamber when a first flow controller is activated; a second precursor flow path to provide a second precursor to the reaction chamber when a second flow controller is activated; a removal flow path to allow removal of gas from the reaction chamber; a removal flow controller to create a gas flow in the reaction chamber to the removal flow path when the removal flow controller is activated; and, a sequence controller operably connected to the first, second and removal flow controllers and the sequence controller being programmed to enable infiltration of an infiltrateable material provided on the substrate in the reaction chamber. The apparatus may be provided with a heating system.

The disclosure relates to a sequential infiltration synthesis apparatus comprising: a reaction chamber constructed and arranged to accommodate at least one substrate; a first precursor flow path to provide the first precursor to the reaction chamber when a first flow controller is activated; a second precursor flow path to provide a second precursor to the reaction chamber when a second flow controller is activated; a removal flow path to allow removal of gas from the reaction chamber; a removal flow controller to create a gas flow in the reaction chamber to the removal flow path when the removal flow controller is activated; and, a sequence controller operably connected to the first, second and removal flow controllers and the sequence controller being programmed to enable infiltration of an infiltrateable material provided on the substrate in the reaction chamber. The apparatus may be provided with a heating system.

A carbon nanotube (CNT) growth apparatus includes: a body; an inlet cap; an outlet cap; insulation extending through a portion of an interior of the body, the insulation including a first stage and a second stage, a flow tube extending through the inlet cap and passing coaxially through the first stage of the insulation, the flow tube configured to receive and flow a fluid to the interior of the body; a gas heater including a plurality of heat pipes configured to be inserted in the first stage of the insulation, the plurality of heat pipes being disposed adjacent to the flow tube; a substrate heater incorporated in the second stage of the insulation; and a temperature controller configured to adjust a temperature of the gas heater and substrate heater, wherein a removed portion of the second stage is configured to provide an unobstructed view of the substrate.

A carbon nanotube (CNT) growth apparatus includes: a body; an inlet cap; an outlet cap; insulation extending through a portion of an interior of the body, the insulation including a first stage and a second stage, a flow tube extending through the inlet cap and passing coaxially through the first stage of the insulation, the flow tube configured to receive and flow a fluid to the interior of the body; a gas heater including a plurality of heat pipes configured to be inserted in the first stage of the insulation, the plurality of heat pipes being disposed adjacent to the flow tube; a substrate heater incorporated in the second stage of the insulation; and a temperature controller configured to adjust a temperature of the gas heater and substrate heater, wherein a removed portion of the second stage is configured to provide an unobstructed view of the substrate.

In a CVD reactor and a method for the open-loop/closed-loop control of the surface temperature of substrates arranged therein, the substrates lie on substrate-retaining elements, which are each supported by a gas cushion. Actual values of the surface temperatures associated with a respective substrate-retaining element are successively measured and the surface temperatures are controlled in a closed-loop manner to a common value by varying the gas cushion height. After measuring each actual value of the surface temperature associated with a substrate-retaining element and using only the respective last-measured actual value of the surface temperatures of each substrate-retaining element, a first average value is calculated, a difference value associated with the substrate-retaining element is calculated, and an approximate actual value is calculated for each of the other substrate-retaining elements by adding the associated difference value to the first average value, said approximate actual value being used for the open-loop/closed-loop control.

In a CVD reactor and a method for the open-loop/closed-loop control of the surface temperature of substrates arranged therein, the substrates lie on substrate-retaining elements, which are each supported by a gas cushion. Actual values of the surface temperatures associated with a respective substrate-retaining element are successively measured and the surface temperatures are controlled in a closed-loop manner to a common value by varying the gas cushion height. After measuring each actual value of the surface temperature associated with a substrate-retaining element and using only the respective last-measured actual value of the surface temperatures of each substrate-retaining element, a first average value is calculated, a difference value associated with the substrate-retaining element is calculated, and an approximate actual value is calculated for each of the other substrate-retaining elements by adding the associated difference value to the first average value, said approximate actual value being used for the open-loop/closed-loop control.