Patent classifications
C23C16/545
Apparatus and Methods for Roll-to-Roll (R2R) Plasma Enhanced/Activated Atomic Layer Deposition (PEALD/PAALD)
Techniques are disclosed for roll-to-roll (R2R) atomic layer deposition (ALD). R2R ALD is accomplished by arranging precursor nozzles in A/B pairs while a flexible web substrate moves underneath the A/B pairs at a uniform speed. Nozzles A of the A/B pairs continuously flow a precursor A into the process volume of the R2R ALD chamber. The plasma enhanced/activated ALD (PEALD/PAALD) embodiments utilize electron cyclotron rotation (ECR)-enhanced hollow cathode plasma sources (HCPS) where nozzles B flow activated neutrals of precursor B into the process volume. As the flexible web moves in an R2R motion, nucleates from precursor A deposited on the surface of the substrate, and neutrals of precursor B undergo a self-limiting reaction to deposit a single atomically sized ALD film/layer. In this manner, multiple ALD layers may be deposited by each successive A/B pair in a single pass of the web. There is also a heat source underneath the web to further facilitate the ALD reaction, or to support thermal ALD embodiments.
Methods and apparatus for depositing materials on a continuous substrate
Methods and apparatus for depositing material on a continuous substrate are provided herein. In some embodiments, an apparatus for processing a continuous substrate includes: a first chamber having a first volume; a second chamber having a second volume fluidly coupled to the first volume; and a plurality of process chambers, each having a process volume defining a processing path between the first chamber and the second chamber, wherein the process volume of each process chamber is fluidly coupled to each other, to the first volume, and to the second volume, and wherein the first chamber, the second chamber, and the plurality of process chambers are configured to process a continuous substrate that extends from the first chamber, through the plurality of process chambers, and to the second chamber.
AREA SELECTIVE ATOMIC LAYER DEPOSITION METHOD AND TOOL
The present disclosure concerns an atomic layer deposition device for area-selective deposition of a target material layer onto a deposition area of a substrate surface further comprising a non-deposition area. In use the substrate is conveyed along a plurality of deposition and separator spaces including at least two gas separator spaces provided with at least a separator gas inlet and a separator drain for, in use exposing the substrate to a separator gas flow. Wherein at least one of the gas separator spaces forms a combined separator-inhibitor gas flow comprising a separator gas and inhibitor moieties. The inhibitor moieties selectively adhering to the non-deposition area to form an inhibition layer reducing adsorption of precursor moieties. In a preferred embodiment the device includes a back-etching space to increase selectivity of the deposition process.
LAMINATE AND METHOD OF PRODUCING THE SAME, AND GAS BARRIER FILM AND METHOD OF PRODUCING THE SAME
A laminate that improves barrier properties of an atomic layer deposition film in spite of use of a substrate made of a polymer material, and provides a gas barrier film and a method of producing the same. The laminate includes: a substrate made a polymer material; an undercoat layer disposed on at least part of a surface of the substrate and made up of an inorganic material containing Ta; and an atomic layer deposition film disposed so as to cover a surface of the undercoat layer.
CVD REACTOR WITH A MULTI-ZONE HEATED PROCESS CHAMBER
A device, system and method for depositing crystalline layers on at least one crystalline substrate is described. The disclosure includes the use of a multi zone heater, the multi zone heater is disposed between a reactor housing and a process chamber. The multi zone heater has different electrical properties along its length, whereby the multi zone heater when heated by eddy currents induced by an RF field generated by a RF heating coil provides a temperature profile inside the multi zone heater that varies along the length of the multi zone heater for heating the process chamber.
INSTALLATION FOR FILM DEPOSITION ONTO AND/OR MODIFICATION OF THE SURFACE OF A MOVING SUBSTRATE
An installation having a housing, a substrate support (20) received in the housing, diffuser (42) for diffusing an inert gas towards the substrate support, and at least one head (30) defining an inner volume (V) opened opposite to the top, the head being provided with at least two electrodes (8, 8′, 8″) for creating an electric discharge and with an injector (7, 7′, 7″) for injecting a gaseous mixture towards the substrate. The injector has at least one injection tube (7, 7′, 7″) placed between two adjacent electrodes or between one electrode and a peripheral wall, the tube being provided with injection holes facing the substrate support, for injecting the gaseous mixture on the substrate, whereas diffuser is provided inside the head, the injection tube being placed between the substrate support and the diffuser so that, in use, the gaseous mixture is urged against the substrate by the inert gas.
Temperature control roller, transporting arrangement and vacuum arrangement
According to various embodiments, the temperature control roller may comprise: a cylindrical roller shell, which has a multiplicity of gas outlet openings; a temperature control device, which is configured to supply and/or extract thermal energy to or from the cylindrical roller shell; multiple gas lines made to extend along the axis of rotation; a gas distributing structure, which couples the multiple gas lines and the multiplicity of gas outlet openings to one another in a gas-conducting manner, the gas distributing structure having a lower structure density than the multiplicity of gas outlet openings.
Holding System for Holding Substrates during a Processing of the Surfaces of the Substrates
The invention relates to a holding system (1) for holding substrates (12) for use in a surface processing system having a covering area (20), comprising a plurality of fixing elements (2), a body (24) arranged within the covering area (20) for receiving the fixing elements (2), and a positioning element (26) for adjusting the covering and a machining area (20, 22), wherein a plurality of substrates (12) can be fixed by the fixing elements (2) and processed within the machining area (22).
SYSTEM AND METHOD FOR COATING CERAMIC FIBER
A system for coating ceramic fibers for use in manufacturing a ceramic matric composite (CMC) article includes a frame having a plurality of frame members arranged so as to create a void therebetween. At least one of frame members includes a hollow body and at least one perforated hole defined in the hollow body. Thus, the ceramic fibers are securable at respective ends of the frame and extend across the void. The frame also includes an inlet in fluid communication with the perforated hole(s) so as to allow a coating material to flow into and through the hollow body and out of the perforated hole(s) at a location of at least a portion of one of the ceramic fibers. As such, the coating material is configured to cause the portion of one of the ceramic fibers to separate from the frame such that the portion is uniformly coated with the coating material.
Laminate and method of producing the same, and gas barrier film and method of producing the same
A laminate that improves barrier properties of an atomic layer deposition film in spite of use of a substrate made of a polymer material, and provides a gas barrier film and a method of producing the same. The laminate includes: a substrate made a polymer material; an undercoat layer disposed on at least part of a surface of the substrate and made up of an inorganic material containing Ta; and an atomic layer deposition film disposed so as to cover a surface of the undercoat layer.