The present invention provides a semiconductor wafer treatment liquid, the treatment liquid including at least one hypohalite ion, and at least one anion species selected from halate ion, halite ion and halide ion, wherein at least one of the anion species has a content of 0.30 mol/L or more and 6.00 mol/L or less relative to the treatment liquid.

A glass wiring board that can be kept from cracking by better preventing concentration of stresses in a glass plate on which a conductor layer including an electrolytic copper plating layer is provided, the wiring board includes: a glass plate; a first metal layer covering at least a part of the glass plate; and a second metal layer covering at least a part of the first metal layer, and the area of the first metal layer in contact with the second metal layer is smaller than the area of the second metal layer facing the first metal layer.

A method for constructing a three-dimensional multi-scale surface to obtain controlled and improved physical and chemical configurations to promote the integration of orthopedic and/or dental implants, to human and/or animal tissues, in different shapes and geometries in a versatile manner, and can be applied to all types of metals, metal alloys and/or ceramic compounds. This method includes the modification at the macroscopic level of the roughness, with an objective of promoting the mechanical interlocking of the implant, followed by the modification of the surface for the formation of microtopography, then the microtopography is changed to obtain a nanotopography with characteristics that optimize cellular metabolic responses related to attraction, adhesion, spreading, proliferation and cell growth, in addition to phenotypic and genotypic inductions in undifferentiated cells and in osteoblast lineage, responsible for mineralization and bone neoformation. As a result, the interface between implant and bone is improved.

A method for constructing a three-dimensional multi-scale surface to obtain controlled and improved physical and chemical configurations to promote the integration of orthopedic and/or dental implants, to human and/or animal tissues, in different shapes and geometries in a versatile manner, and can be applied to all types of metals, metal alloys and/or ceramic compounds. This method includes the modification at the macroscopic level of the roughness, with an objective of promoting the mechanical interlocking of the implant, followed by the modification of the surface for the formation of microtopography, then the microtopography is changed to obtain a nanotopography with characteristics that optimize cellular metabolic responses related to attraction, adhesion, spreading, proliferation and cell growth, in addition to phenotypic and genotypic inductions in undifferentiated cells and in osteoblast lineage, responsible for mineralization and bone neoformation. As a result, the interface between implant and bone is improved.

An etchant composition and method for etching molybdenum from a microelectronic device at an etch rate are described. A microelectronic device is contacted with an etchant composition for a time sufficient to at least partially remove the molybdenum. The etchant composition comprises at least one oxidizing agent, at least one oxidizing agent stabilizer, and at least one base and has a pH of from 7.5 to 13. The etchant composition selectively removes molybdenum at an etch rate of 5-200 Å/min.

An etchant composition and method for etching molybdenum from a microelectronic device at an etch rate are described. A microelectronic device is contacted with an etchant composition for a time sufficient to at least partially remove the molybdenum. The etchant composition comprises at least one oxidizing agent, at least one oxidizing agent stabilizer, and at least one base and has a pH of from 7.5 to 13. The etchant composition selectively removes molybdenum at an etch rate of 5-200 Å/min.

An etchant composition and method for etching molybdenum from a microelectronic device at an etch rate are described. A microelectronic device is contacted with an etchant composition for a time sufficient to at least partially remove the molybdenum. The etchant composition comprises at least one oxidizing agent, at least one oxidizing agent stabilizer, and at least one base and has a pH of from 7.5 to 13. The etchant composition selectively removes molybdenum at an etch rate of 5-200 Å/min.

An etchant composition and method for etching molybdenum from a microelectronic device at an etch rate are described. A microelectronic device is contacted with an etchant composition for a time sufficient to at least partially remove the molybdenum. The etchant composition comprises at least one oxidizing agent, at least one oxidizing agent stabilizer, and at least one base and has a pH of from 7.5 to 13. The etchant composition selectively removes molybdenum at an etch rate of 5-200 Å/min.

A treatment liquid for a semiconductor containing a group 6 metal, the treatment liquid containing hypobromite ions. Also provided is a treatment liquid for a semiconductor containing a group 6 metal, the treatment liquid characterized by being formed by adding and mixing at least a bromine-containing compound, an oxidizing agent, a base compound, and water, wherein relative to a total mass, an added amount of the bromine-containing compound is 0.008 mass % or more and less than 10 mass % as an amount of bromine element, and an added amount of the oxidizing agent is 0.1 mass ppm or more and 20 mass % or less; and pH at 25° C. is 8 or higher and 14 or lower. Further provided is a method for producing the treatment liquid for a semiconductor.

A composition and method for etching molybdenum-containing film on a microelectronic device substrate is provided. A microelectronic device substrate is contacted with the composition of the invention for a time sufficient to at least partially remove the molybdenum-containing film. The composition comprises at least one oxidizing agent, at least one complexing agent, at least one cationic surfactant, and has a pH of from about 7.5 to about 13. The etchant composition selectively removes molybdenum at an etch rate of about 20 to 50 Å/minute at room temperature, with improved uniformity of removal.