C25D5/611

ELECTROLYTIC COPPER FOIL

Provided is an electrodeposited copper foil having high smoothness and exhibiting high flexibility (particularly, high flexibility after annealing at 180° C. for 1 hour) suitable for a flexible substrate. This electrodeposited copper foil has an Rz of 0.1 to 2.0 μm on at least one surface. In cross-sectional analysis by EBSD, a proportion of an area occupied by copper crystal grains satisfying the following conditions relative to an area of an observation field occupied by copper crystal grains is 63% or more. The conditions are as follows: i) (101) orientation; ii) an aspect ratio of 0.500 or less; iii) | sin θ| of 0.001 to 0.707, where θ)(°) is an angle between a normal line of an electrode surface of the electrodeposited copper foil and a major axis of the copper crystal grain; and iv) when the crystal is elliptically approximated, a length of a minor axis of 0.38 μm or smaller.

Satin copper bath and method of depositing a satin copper layer
11555252 · 2023-01-17 · ·

An aqueous acidic copper electroplating bath that produces a satin deposit includes a source of copper ions, an acid, a satin additive, and optionally one or more acidic copper electroplating bath additive(s), wherein the satin additive includes a block copolymer with the structure of RO(EO)m(PO)nH.

HEAT EQUALIZATION PLATE
20230240045 · 2023-07-27 ·

A heat equalization plate includes a first copper clad laminate including a first copper foil, a second copper clad laminate including a second copper foil, a connecting bump, a plurality of thermally conductive bumps, and a working fluid. The second copper foil faces the first copper foil. The connecting bump is formed on a surface of the first copper foil facing the second copper foil. The thermally conductive bumps are formed on a surface of the first copper foil facing the second copper foil. The connecting bump is an annulus and surrounds the thermally conductive bumps. The connecting bump is connected to the second copper foil to form a sealed chamber. The thermally conductive bumps are received in the sealed chamber. The working fluid is received in the sealed chamber.

Method of tin-plating copper alloy for electric or electronic parts and automobile parts and tin-plating material of copper alloy manufactured therefrom

The present invention provides a method of tin-plating a copper alloy for electric or electronic parts and automobile parts which has excellent insertion force, heat-resistant peeling, and solderability, and a tin-plating material of a copper alloy manufactured therefrom.

Threaded connection for pipe and method for producing threaded connection for pipe

A threaded connection for pipe includes a pin and a box. The threaded connection for pipe includes a Zn—Ni alloy plated layer and a solid lubricant coating. The Zn—Ni alloy plated layer is formed on a contact surface of at least one of the pin and the box and contains 10 to 16 mass % of Ni. The solid lubricant coating is formed on the Zn—Ni alloy plated layer. The contact surface on which the Zn—Ni alloy plated layer is formed is ground. Now define arithmetic average roughness of the surface of the Zn—Ni alloy plated layer as Ra1, and arithmetic average roughness of the contact surface as Ra2. Ra1 ranges from 0.1 to 3.2 μm. Ra1 is more than Ra2.

Tin-plated copper terminal material and method of manufacturing the same

A tin-plated copper terminal material in which on a substrate made of copper or copper alloy, a nickel-or-nickel-alloy layer, a copper-tin alloy layer, and a tin layer are laminated in this order; in this material, the tin layer has an average thickness 0.2 μm to 1.2 μm inclusive; the copper-tin alloy layer is a compound alloy layer in which Cu.sub.6Sn.sub.5 is a main ingredient and part of copper in the Cu.sub.6Sn.sub.5 is substituted with nickel, and an average crystal grain size is 0.2 μm to 1.5 μm inclusive; part of the copper-tin alloy layer appears on a surface of the tin layer and tin solidification parts exist like islands; and the tin solidification parts have an average diameter 10 μm to 1000 μm inclusive in a direction along the surface of the tin layer and an area ratio to the surface of the tin layer 1% to 90% inclusive.

ELECTROPLATING CO-PLANARITY IMPROVEMENT BY DIE SHIELDING

Exemplary electroplating systems may include a vessel. The systems may include a paddle disposed within the vessel. The paddle may be characterized by a first surface and a second surface. The first surface of the paddle may be include a plurality of ribs that extend upward from the first surface. The plurality of ribs may be arranged in a generally parallel manner about the first surface. The paddle may define a plurality of apertures through a thickness of the paddle. Each of the plurality of apertures may have a diameter of less than about 5 mm. The paddle may have an open area of less than about 15%.

SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING SAME
20220344203 · 2022-10-27 · ·

Some of the embodiments of the present application provide a semiconductor structure and a method of manufacturing the same, the method of manufacturing the semiconductor structure comprising: providing a base; performing a first electroplating process to form a first electroplated layer on the base; performing a second electroplating process to form a second electroplated layer on the surface of the first electroplated layer, the current density of the second electroplated layer being greater than the current density of the first electroplated layer.

PHOTODEFINED APERTURE PLATE AND METHOD FOR PRODUCING THE SAME
20230080331 · 2023-03-16 · ·

In one embodiment, a method for manufacturing an aperture plate includes depositing a releasable seed layer above a substrate, applying a first patterned photolithography mask above the releasable seed layer, the first patterned photolithography mask having a negative pattern to a desired aperture pattern, electroplating a first material above the exposed portions of the releasable seed layer and defined by the first mask, applying a second photolithography mask above the first material, the second photolithography mask having a negative pattern to a first cavity, electroplating a second material above the exposed portions of the first material and defined by the second mask, removing both masks, and etching the releasable seed layer to release the first material and the second material. The first and second material form an aperture plate for use in aerosolizing a liquid. Other aperture plates and methods of producing aperture plates are described according to other embodiments.

ELECTRODE WIRE FOR ELECTRICAL DISCHARGE MACHINING AND PREPARATION METHOD THEREOF
20230121719 · 2023-04-20 ·

An electrode wire includes a brass core, a Cu—Zn alloy layer coated on the brass core, and a surface layer. The surface layer includes CuO, ZnO, Cu.sub.2(OH).sub.2CO.sub.3, and a Cu—Zn intermetallic compound. The surface layer is in the shape of particles or sheets spaced apart on the Cu—Zn alloy layer; and the Cu—Zn alloy layer is exposed with respect to spaces between the particles or sheets.