A semiconductor wafer comprises a substrate wafer of monocrystalline silicon and a dopant-containing epitaxial layer of monocrystalline silicon atop the substrate wafer, wherein a non-uniformity of the thickness of the epitaxial layer is not more than 0.5% and a non-uniformity of the specific electrical resistance of the epitaxial layer is not more than 2%.

Disclosed herein is a method of producing a substrate having a wrinkle pattern of a single-layer rhenium disulfide (ReS.sub.2) nanoflakes deposited thereon. The method is characterized by using ammonium rhenium and sulfur powders as the rhenium source and the sulfur source, respectively; and with the addition of molecular sieve to control the release of the rhenium source during the deposition of ReS.sub.2, in which a single layer of ReS.sub.2 is deposited on a substrate via chemical vapor deposition. The single-layer ReS.sub.2 is then exposed to UV light to induce the formation of a wrinkle pattern.

A method deposits an epitaxial layer on a front side of a semiconductor wafer having monocrystalline material. The method includes: providing the semiconductor wafer; arranging the semiconductor wafer on a susceptor; heating the semiconductor wafer to a deposition temperature using thermal radiation directed to the front side and to the rear side of the semiconductor wafer; conducting a deposition gas over the front side of the semiconductor wafer; and selectively reducing an intensity of a portion of the thermal radiation that is directed to the rear side of the semiconductor wafer, as a result of which first partial regions at an edge of the semiconductor wafer, in the first partial regions a growth rate of the epitaxial layer is greater than in adjacent second partial regions given uniform temperature of the semiconductor wafer owing to an orientation of the monocrystalline material, are heated more weakly.

The present disclosure provides a semiconductor processing apparatus according to one embodiment. The semiconductor processing apparatus includes a chamber; a base station located in the chamber for supporting a semiconductor substrate; a preheating assembly surrounding the base station; a first heating element fixed relative to the base station and configured to direct heat to the semiconductor substrate; and a second heating element moveable relative to the base station and operable to direct heat to a portion of the semiconductor substrate.

A CNT production apparatus 1 provided by the present invention includes a cylindrical chamber 10 and a control valve 60 provided to a gas discharge pipe 50. The chamber 10 includes a reaction zone provided in a partial range of the chamber 10 in the direction of the cylinder axis, a deposition zone 22 which is provided downstream of the reaction zone 20, and a deposition state detector 40 that detects a physical property value indicating a deposition state of carbon nanotubes in the deposition zone 22. The apparatus is configured to close the control valve 60 and deposit carbon nanotubes in the deposition zone 22 when the physical property value detected by the deposition state detector 40 is equal to or less than a predetermined threshold value, and configured to open the control valve 60 and recover the carbon nanotubes deposited in the deposition zone 22 when the physical property value exceeds the predetermined threshold value.

A method of selectively controlling materials structure in solution based chemical synthesis and deposition of materials by controlling input energy from pulsed energy source includes determining solution conditions, searching and/or determining energy barrier(s) of a desired materials structure formation, applying precursor solution with selected solution condition onto a substrate, and applying determined input energy from a pulsed energy source with a selected condition to the substrate, thereby nucleating and growing the crystal.

The present disclosure generally relates to an epitaxial chamber for processing of semiconductor substrates. In one example, the epitaxial chamber has a chamber body assembly. The chamber body assembly includes a lower window and an upper window, wherein chamber body assembly, the lower window and the upper window enclose an internal volume. A susceptor assembly is disposed in the internal volume. The epitaxial chamber also has a plurality of temperature control elements. The plurality of temperature control elements include one or more of an upper lamp module, a lower lamp module, an upper heater, a lower heater, or a heated gas passage.

Disclosed herein are laser-assisted metal-organic chemical vapor deposition devices and methods of use thereof.

A method includes flowing first precursors over a semiconductor substrate to form an epitaxial region, the epitaxial region includes a first element and a second element; converting a second precursor into first radicals and first ions; separating the first radicals from the first ions; and flowing the first radicals over the epitaxial region to remove at least some of the second element from the epitaxial region.

A preheat ring (126) for use in a chemical vapor deposition system includes a first portion and a second portion selectively coupled to the first portion such that the first and second portions combine to form an opening configured to receive a susceptor therein. Each of the first and second portions is independently moveable with respect to each other.