The present invention relates to a method of manufacturing polycrystalline silicon ingot using a crucible in which an oxygen exhaust passage is formed by single crystal or polycrystalline rods, the method including the steps of: manufacturing the single crystal or polycrystalline silicon rods each having the shape of a quadrilateral pillar; putting the single crystal or polycrystalline quadrilateral pillar-shaped silicon rods into the crucible in such a manner as to be arranged close to one another along the inner peripheral surface of the crucible to thus form a space portion inside the single crystal or polycrystalline silicon rods, into which silicon chunks are put, and the oxygen exhaust passages between the inner peripheral surface of the crucible and the respective surfaces of the single crystal or polycrystalline silicon rods oriented toward the inner peripheral surface of the crucible; putting the silicon chunks into the space portion of the crucible; and melting and crystallizing the silicon chunks.

The invention discloses a method for preparing an indium phosphide crystal by using an indium-phosphorus mixture, belongs to the technical field of semiconductors, and comprises the steps of preparing an indium-phosphorus mixed ball, charging, maintaining the high furnace pressure and the low temperature of the indium-phosphorus mixed ball, melting a covering agent, feeding, synthesizing and crystal growing, which is synthesized by directly melting the proportioned indium-phosphorus mixed ball. Indium powder and phosphorus powder are uniformly mixed and pressed into spherical indium-phosphorus mixed particles, then the mixture of the indium-phosphorus mixed balls and the boron oxide powder is fed into a melt with a boron oxide covering agent, and crystal growth in situ is performed after synthesis. The method has the advantages of short reaction time, high efficiency and raw material saving, which can effectively reduce the risk of contamination of materials, saves procedures and reduces the material preparation cost.

The invention discloses a method for preparing an indium phosphide crystal by using an indium-phosphorus mixture, belongs to the technical field of semiconductors, and comprises the steps of preparing an indium-phosphorus mixed ball, charging, maintaining the high furnace pressure and the low temperature of the indium-phosphorus mixed ball, melting a covering agent, feeding, synthesizing and crystal growing, which is synthesized by directly melting the proportioned indium-phosphorus mixed ball. Indium powder and phosphorus powder are uniformly mixed and pressed into spherical indium-phosphorus mixed particles, then the mixture of the indium-phosphorus mixed balls and the boron oxide powder is fed into a melt with a boron oxide covering agent, and crystal growth in situ is performed after synthesis. The method has the advantages of short reaction time, high efficiency and raw material saving, which can effectively reduce the risk of contamination of materials, saves procedures and reduces the material preparation cost.

In one embodiment employing a vertical draw apparatus, a method of crystallization growth on a substrate surface of a substrate having a substrate material includes: mounting the substrate to a sample holder with the substrate surface facing a liquid surface of a reservoir disposed in a chamber that provides an ambient temperature; seeding the substrate surface with seed droplets; lowering the substrate surface to the liquid surface of the reservoir; independently controlling a temperature of the substrate and a temperature of the reservoir to produce a temperature difference between the substrate and the reservoir over a period of time for crystallization growth; and retracting the substrate surface from the liquid surface of the reservoir at a draw rate. The draw rate and the temperature difference are selected to grow polycrystalline laminate on the substrate surface. Consistent polycrystalline columnar microstructures are formed with appropriate seeding of the substrate surface.

In one embodiment employing a vertical draw apparatus, a method of crystallization growth on a substrate surface of a substrate having a substrate material includes: mounting the substrate to a sample holder with the substrate surface facing a liquid surface of a reservoir disposed in a chamber that provides an ambient temperature; seeding the substrate surface with seed droplets; lowering the substrate surface to the liquid surface of the reservoir; independently controlling a temperature of the substrate and a temperature of the reservoir to produce a temperature difference between the substrate and the reservoir over a period of time for crystallization growth; and retracting the substrate surface from the liquid surface of the reservoir at a draw rate. The draw rate and the temperature difference are selected to grow polycrystalline laminate on the substrate surface. Consistent polycrystalline columnar microstructures are formed with appropriate seeding of the substrate surface.

The invention discloses a method for preparing an indium phosphide crystal by using an indium-phosphorus mixture, belongs to the technical field of semiconductors, and comprises the steps of preparing an indium-phosphorus mixed ball, charging, maintaining the high furnace pressure and the low temperature of the indium-phosphorus mixed ball, melting a covering agent, feeding, synthesizing and crystal growing, which is synthesized by directly melting the proportioned indium-phosphorus mixed ball. Indium powder and phosphorus powder are uniformly mixed and pressed into spherical indium-phosphorus mixed particles, then the mixture of the indium-phosphorus mixed balls and the boron oxide powder is fed into a melt with a boron oxide covering agent, and crystal growth in situ is performed after synthesis. The method has the advantages of short reaction time, high efficiency and raw material saving, which can effectively reduce the risk of contamination of materials, saves procedures and reduces the material preparation cost.

The invention discloses a method for preparing an indium phosphide crystal by using an indium-phosphorus mixture, belongs to the technical field of semiconductors, and comprises the steps of preparing an indium-phosphorus mixed ball, charging, maintaining the high furnace pressure and the low temperature of the indium-phosphorus mixed ball, melting a covering agent, feeding, synthesizing and crystal growing, which is synthesized by directly melting the proportioned indium-phosphorus mixed ball. Indium powder and phosphorus powder are uniformly mixed and pressed into spherical indium-phosphorus mixed particles, then the mixture of the indium-phosphorus mixed balls and the boron oxide powder is fed into a melt with a boron oxide covering agent, and crystal growth in situ is performed after synthesis. The method has the advantages of short reaction time, high efficiency and raw material saving, which can effectively reduce the risk of contamination of materials, saves procedures and reduces the material preparation cost.

Disclosed are a yttrium-doped barium fluoride crystal and a preparation method and the use thereof, wherein the yttrium-doped barium fluoride crystal has a chemical composition of Ba.sub.(1−x)Y.sub.xF.sub.2+x, in which 0.01≤x≤0.50. The yttrium-doped BaF.sub.2 crystal of the present invention has improved scintillation performance. The yttrium doping may greatly suppress the slow luminescence component of the BaF.sub.2 crystal and has an excellent fast/slow scintillation component ratio. The doped crystal is coupled to an optical detector to obtain a scintillation probe which is applicable to the fields of high time resolved measurement radiation such as high-energy physics, nuclear physics, ultrafast imaging and nuclear medicine imaging.

A metal member according to this invention is composed of polycrystals of a metal made of ruthenium or an alloy containing ruthenium at a maximum ratio. The aspect ratio of a crystal grain of the polycrystalline metal member is 1.5 or more. A plurality of crystal grains forming the metal member are arranged with their major axes being pointed in the same direction, and the number of crystal grains in a section in the major axis direction of the crystal grains is 120 or less per 1 mm.sup.2.

In one embodiment employing a vertical draw apparatus, a method of crystallization growth on a substrate surface of a substrate having a substrate material includes: mounting the substrate to a sample holder with the substrate surface facing a liquid surface of a reservoir disposed in a chamber that provides an ambient temperature; seeding the substrate surface with seed droplets; lowering the substrate surface to the liquid surface of the reservoir; independently controlling a temperature of the substrate and a temperature of the reservoir to produce a temperature difference between the substrate and the reservoir over a period of time for crystallization growth; and retracting the substrate surface from the liquid surface of the reservoir at a draw rate. The draw rate and the temperature difference are selected to grow polycrystalline laminate on the substrate surface. Consistent polycrystalline columnar microstructures are formed with appropriate seeding of the substrate surface.