The fabrication of single-crystalline ionically conductive materials and related articles and systems are generally described.

The fabrication of single-crystalline ionically conductive materials and related articles and systems are generally described.

A method of producing ceria nanocrystals is provided. The method includes providing a gas that includes ozone to a solution that includes a cerium salt, and obtaining ceria nanocrystals from the solution after the gas is provided to the first solution. A method of producing nanoparticles is provided. The method includes providing a gas that includes ozone to a solution that includes a metal salt that includes at least one of a transition metal or a lanthanide, and producing at least one of metal oxide nanoparticles, metal oxynitrate nanoparticles, or metal oxyhydroxide nanoparticles from the solution after the gas is provided to the solution.

A method of producing ceria nanocrystals is provided. The method includes providing a gas that includes ozone to a solution that includes a cerium salt, and obtaining ceria nanocrystals from the solution after the gas is provided to the first solution. A method of producing nanoparticles is provided. The method includes providing a gas that includes ozone to a solution that includes a metal salt that includes at least one of a transition metal or a lanthanide, and producing at least one of metal oxide nanoparticles, metal oxynitrate nanoparticles, or metal oxyhydroxide nanoparticles from the solution after the gas is provided to the solution.

A production apparatus for a metal oxide single crystal according to the present invention includes a crucible for housing a crystal raw material and a seed crystal, which has a first end and a second end, and in which the crystal raw material is disposed on a first end side, and the seed crystal is disposed on a second end side, a heater that heats the crucible, and a cooling rod, which has a third end and a fourth end, and in which the third end is provided in contact with or in proximity to the second end of the crucible so as to cool the second end by depriving the second end of heat.

A production apparatus for a metal oxide single crystal according to the present invention includes a crucible for housing a crystal raw material and a seed crystal, which has a first end and a second end, and in which the crystal raw material is disposed on a first end side, and the seed crystal is disposed on a second end side, a heater that heats the crucible, and a cooling rod, which has a third end and a fourth end, and in which the third end is provided in contact with or in proximity to the second end of the crucible so as to cool the second end by depriving the second end of heat.

A composite substrate includes: a piezoelectric layer; and a reflective layer arranged on a rear surface side of the piezoelectric layer, wherein the reflective layer includes a high-impedance layer and a low-impedance layer containing silicon oxide, and wherein a ratio of a region of first structures in the high-impedance layer is more than 70%.

A vertical gallium oxide (Ga2O3) device having a substrate, an n-type Ga.sub.2O.sub.3 drift layer on the substrate, an, n-type semiconducting channel extending from the n-type Ga.sub.2O.sub.3 drift layer, the channel being one of fin-shaped or nanowire shaped, an n-type source layer disposed on the channel; the source layer has a higher doping concentration than the channel, a first dielectric layer on the n-type Ga2O3 drift layer and on sidewalls of the n-type semiconducting channel, a conductive gate layer deposited on the first dielectric layer and insulated from the n-type source layer, n-type semiconducting channel as well as n-type Ga2O3 drift layer, a second dielectric layer deposited over the conductive gate layer, covering completely the conductive gate layer on channel sidewalls and an ohmic source contact deposited over the n-type source layer and over at least a part of the second dielectric layer; the source contact being configured not to be in electrical contact with the conductive gate layer.

A vertical gallium oxide (Ga2O3) device having a substrate, an n-type Ga.sub.2O.sub.3 drift layer on the substrate, an, n-type semiconducting channel extending from the n-type Ga.sub.2O.sub.3 drift layer, the channel being one of fin-shaped or nanowire shaped, an n-type source layer disposed on the channel; the source layer has a higher doping concentration than the channel, a first dielectric layer on the n-type Ga2O3 drift layer and on sidewalls of the n-type semiconducting channel, a conductive gate layer deposited on the first dielectric layer and insulated from the n-type source layer, n-type semiconducting channel as well as n-type Ga2O3 drift layer, a second dielectric layer deposited over the conductive gate layer, covering completely the conductive gate layer on channel sidewalls and an ohmic source contact deposited over the n-type source layer and over at least a part of the second dielectric layer; the source contact being configured not to be in electrical contact with the conductive gate layer.

A method for growing long-seed DKDP crystal by two-dimensional motion grows the crystal along the cylindrical surface, and there is no cylinder-cone interface with low optical quality, while avoiding three flow regions which are inevitable in the crystal growth process by rotating crystal method, including incident flow, side flow and wake flow, and easily cause inclusion formation. The long seed crystal moves periodically in the fresh solution, four cylindrical surfaces can achieve reversible shear flow in one cycle, and any point on the cylindrical surface experiences the same hydrodynamic conditions in one movement cycle, so that the solute supply is sufficient and uniform, the growth velocity is improved, and the stability of morphology is ensured. The method facilitates rapid growth of high quality DKDP crystals and provides a better solution for the large-size, high-quality DKDP crystal growth required by the ICF laser device.