The present disclosure provides a growth method of a high-temperature phase lanthanum borosilicate crystal, where the high-temperature phase lanthanum borosilicate crystal is a β-La.sub.1-yLn.sub.yBSiO.sub.5 crystal prepared by a high-temperature flux method; a composite flux system is (La.sub.1-yLn.sub.y)BO.sub.3—LiMoO.sub.4—SiO.sub.2—B.sub.2O.sub.3, and (La.sub.1-yLn.sub.y)BO.sub.3, LiMoO.sub.4, SiO.sub.2, and B.sub.2O.sub.3 in the system have molar percentages of x.sub.1, x.sub.2, x.sub.3, and x.sub.4, respectively; 0<x.sub.1<0.3, 0.7≤x.sub.2<1, 0<x.sub.3<0.3, x.sub.1+x.sub.2+x.sub.3=1, x.sub.1:x.sub.4=2:1 to 4:1. In the present disclosure, a difficulty is overcome in the crystal growth of β-LaBSiO.sub.5 due to phase transition. The crystal is an optical function material that does not undergo the phase transition during annealing and can exist stably at room temperature. The crystal is widely used in laser, terahertz, and other fields.

The present disclosure provides a growth method of a high-temperature phase lanthanum borosilicate crystal, where the high-temperature phase lanthanum borosilicate crystal is a β-La.sub.1-yLn.sub.yBSiO.sub.5 crystal prepared by a high-temperature flux method; a composite flux system is (La.sub.1-yLn.sub.y)BO.sub.3—LiMoO.sub.4—SiO.sub.2—B.sub.2O.sub.3, and (La.sub.1-yLn.sub.y)BO.sub.3, LiMoO.sub.4, SiO.sub.2, and B.sub.2O.sub.3 in the system have molar percentages of x.sub.1, x.sub.2, x.sub.3, and x.sub.4, respectively; 0<x.sub.1<0.3, 0.7≤x.sub.2<1, 0<x.sub.3<0.3, x.sub.1+x.sub.2+x.sub.3=1, x.sub.1:x.sub.4=2:1 to 4:1. In the present disclosure, a difficulty is overcome in the crystal growth of β-LaBSiO.sub.5 due to phase transition. The crystal is an optical function material that does not undergo the phase transition during annealing and can exist stably at room temperature. The crystal is widely used in laser, terahertz, and other fields.

Provided is a preparation method of a coating material. The method includes: using an aluminum salt and a silicon source as precursors; and performing hydrothermal crystallization and calcination treatments successively under an action of a template agent to obtain the coating material, wherein the template agent is used to cause the coating material to form a porous spherical structure. In the embodiments of the present disclosure, the preparation process of the coating material is simple and the cost is low, and the specific surface area of the prepared coating material is large.

Provided is a preparation method of a coating material. The method includes: using an aluminum salt and a silicon source as precursors; and performing hydrothermal crystallization and calcination treatments successively under an action of a template agent to obtain the coating material, wherein the template agent is used to cause the coating material to form a porous spherical structure. In the embodiments of the present disclosure, the preparation process of the coating material is simple and the cost is low, and the specific surface area of the prepared coating material is large.

A composite has a solid-state structure, silicate, lithium ions, and at least one paramagnetic or diamagnetic element, which is different from lithium silicon, and oxygen. The solid-state structure has two areas in which the solid-state structure forms an identical crystal orientation. The areas are arranged at a distance of at least one millimeter from each other. A method has a quenching step in which a solid-state structure of a composite is produced, which differs from an ambient temperature solid-state structure. The composite produced by the method has silicate, lithium ions, and an element that is different from lithium, silicon, and oxygen. The method produces at least one gram of the phase pure composite in the quenching step.

A composite has a solid-state structure, silicate, lithium ions, and at least one paramagnetic or diamagnetic element, which is different from lithium silicon, and oxygen. The solid-state structure has two areas in which the solid-state structure forms an identical crystal orientation. The areas are arranged at a distance of at least one millimeter from each other. A method has a quenching step in which a solid-state structure of a composite is produced, which differs from an ambient temperature solid-state structure. The composite produced by the method has silicate, lithium ions, and an element that is different from lithium, silicon, and oxygen. The method produces at least one gram of the phase pure composite in the quenching step.

A scintillation crystal can include a rare earth silicate, an activator, and a Group 2 co-dopant. In an embodiment, the Group 2 co-dopant concentration may not exceed 200 ppm atomic in the crystal or 0.25 at % in the melt before the crystal is formed. The ratio of the Group 2 concentration/activator atomic concentration can be in a range of 0.4 to 2.5. In another embodiment, the scintillation crystal may have a decay time no greater than 40 ns, and in another embodiment, have the same or higher light output than another crystal having the same composition except without the Group 2 co-dopant. In a further embodiment, a boule can be grown to a diameter of at least 75 mm and have no spiral or very low spiral and no cracks. The scintillation crystal can be used in a radiation detection apparatus and be coupled to a photosensor.

A scintillation crystal can include a rare earth silicate, an activator, and a Group 2 co-dopant. In an embodiment, the Group 2 co-dopant concentration may not exceed 200 ppm atomic in the crystal or 0.25 at % in the melt before the crystal is formed. The ratio of the Group 2 concentration/activator atomic concentration can be in a range of 0.4 to 2.5. In another embodiment, the scintillation crystal may have a decay time no greater than 40 ns, and in another embodiment, have the same or higher light output than another crystal having the same composition except without the Group 2 co-dopant. In a further embodiment, a boule can be grown to a diameter of at least 75 mm and have no spiral or very low spiral and no cracks. The scintillation crystal can be used in a radiation detection apparatus and be coupled to a photosensor.

Provided are a piezoelectric material, a piezoelectric member, a piezoelectric element and a pressure sensor that can be used in high-temperature environments. The piezoelectric material is composed of Sr-substituted akermanite represented by Ca.sub.(2-x)Sr.sub.xMgSi.sub.2O.sub.7 (0.1≤x≤0.6).

A class of erbium-doped silicate crystals have a general chemical formula of (Er.sub.xYb.sub.yCe.sub.zA.sub.(1-x-y-z)).sub.3RM.sub.3Si.sub.2O.sub.14, in which the range of x is 0.002 to 0.02, y is 0.005 to 0.1, and z is 0 to 0.15; A is one, two or three elements selected from Ca, Sr, or Ba; R is one or two elements selected from Nb or Ta; M is one or two elements selected from Al or Ga. Using one of such crystals as a gain medium and a diode laser at 940 nm or 980 nm as a pumping source, a 1.5 μm continuous-wave solid-state laser with high output power and high efficiency, as well as a pulse solid-state laser with high energy and narrow width can be obtained.