A thickness estimating apparatus includes a transfer robot, a light source, a camera, a memory and a controller. The memory stores a thickness predicting model generated based on a data set including a thickness of at least one of a test wafer corresponding to the wafer or a test element layer formed on the test wafer, and the thickness predicting model being trained to minimize a loss function of the data set. The controller applies pixel data, which is acquired from at least one pixel selected from a plurality of pixels included in a captured image, to the thickness predicting model, to predict a thickness of at least one of the wafer or an element layer formed on the wafer in a position corresponding to a position of the selected pixel.

A semiconductor structure and a method for managing semiconductor wafer stress are disclosed. The semiconductor structure includes a semiconductor wafer, a first stress layer disposed on and in contact with a backside of the semiconductor wafer, and a second stress layer on and in contact with the first stress layer. The first stress layer exerts a first stress on the semiconductor wafer and the second layer exerts a second stress on the semiconductor wafer that is opposite the first backside stress. The method includes forming a first stress layer on and in contact with a backside of a semiconductor wafer, and further forming a second stress layer on and in contact with the first stress layer. The first stress layer exerts a first stress on the semiconductor wafer and the second stress layer exerts a second stress on the semiconductor wafer that is opposite to the first stress.

A coating system may include a coating chamber; a substrate holder to move a substrate along a motion path; and a sensor device in the coating chamber, wherein the sensor device is configured to move along the motion path, and wherein the sensor device is to perform a spectral measurement on the substrate.

A method and device for measuring the profile of the surface of a flat object of unknown materials, including an interferometry measuring system, ellipsometry measuring system, beam splitter for splitting a light beam of a light source into an interferometry light beam and an ellipsometry light beam, and an analysis unit designed to ascertain the profile height in the measured region on the object surface from an analysis beam analyzed in a detector unit of the interferometry measuring system and a sensor beam received in an ellipsometry sensor. The interferometry measuring system includes a beam divider, reference mirror, and the detector unit, and the ellipsometry measuring system includes a polarizer for polarizing an ellipsometry light beam and transmitting same onto the measuring region on the object surface as well as the ellipsometry sensor, which includes a polarization filter in order to determine the polarization state of a received sensor beam.

A monitoring system and method are presented for use in monitoring a target. The monitoring system comprises: an input utility for receiving input data comprising measured data indicative of optical response of the target measured under predetermined conditions and comprising phase data indicative of a two-dimensional profile of full phase of the optical response of the target in a predetermined two-dimensional parametric space including a two-dimensional range in which said target exhibits phase singularity; an analyzer module for processing said measured data and extracting at least one phase singularity signature of the target characterizing the target status, the phase singularity signature being formed by a number N of phase singularity points, each corresponding to a condition that the physical phase continuously accumulates a nonzero integer multiple m of 2π around said point.

Methods and systems for measuring optical properties of transistor channel structures and linking the optical properties to the state of strain are presented herein. Optical scatterometry measurements of strain are performed on metrology targets that closely mimic partially manufactured, real device structures. In one aspect, optical scatterometry is employed to measure uniaxial strain in a semiconductor channel based on differences in measured spectra along and across the semiconductor channel. In a further aspect, the effect of strain on measured spectra is decorrelated from other contributors, such as the geometry and material properties of structures captured in the measurement. In another aspect, measurements are performed on a metrology target pair including a strained metrology target and a corresponding unstrained metrology target to resolve the geometry of the metrology target under measurement and to provide a reference for the estimation of the absolute value of strain.

A system may include a broadband light source emitting polarized light that is polarized to two orthogonal polarization states, multiple beam splitters for combining and splitting the polarization states, and interferometric cell for creation of interference patterns with respect to a sample surface, lenses of appropriate design that focus the polarized light at predefined locations, and sensors that analyze the polarized light as a function of angle and wavelength. The system may also include a controller configured to modulate the reference arm through operation of an optical chopper and allow for different data analysis modes to be used on the system produced data.

The invention discloses a rapid measurement method for an ultra-thin film optical constant, which includes following steps: S1: using a p-light amplitude reflection coefficient r.sub.p and an s-light amplitude reflection coefficient r.sub.s of an incident light irradiating to an ultra-thin film to be measured to express an amplitude reflection coefficient ratio ρ of the ultra-thin film: $\rho =\frac{r_p}{r_s};$
S2: performing a second-order Taylor expansion to $\rho =\frac{r_p}{r_s}$
at d.sub.f=0 while taking 2πd.sub.f/λ as a variable to obtain a second-order approximation form; S3: performing merging, simplifying and substituting processing to the second-order approximation form for transforming the same into a one-variable quartic equation; S4: solving the one-variable quartic equation to obtain a plurality of solutions of the optical constant of the ultra-thin film, and obtaining a correct solution through conditional judgment, so as to achieve the rapid measurement for the ultra-thin film optical constant.

A substrate processing apparatus includes a chamber including an accommodation space, a stage disposed in the accommodation space and provided with a substrate disposed thereon, a deposition part disposed under the stage and spraying at least one deposition material to the substrate, and a measurement part disposed adjacent to the deposition part. The measurement part includes an accommodation portion provided with an opening defined through at least one surface thereof, a light source disposed in the accommodation portion and irradiating a first light, at least one transmission portion disposed in the opening, facing the light source, and receiving the first light, and a reception portion facing the at least one transmission portion and receiving the first light reflected from the at least one deposition material as a second light.

A method for measuring an element concentration of a material includes: a material sample is irradiated with first electromagnetic waves; second electromagnetic waves radiated by the material sample are obtained under the action of the first electromagnetic waves; material property parameters of the material sample are determined by detecting the second electromagnetic waves; and an element concentration of the material sample is determined according to the material property parameters.