Methods and devices for additive manufacturing of workpieces are provided. For analysis during production, a test is carried out using a selected test method. The test results are compared with simulated test results derived during a simulation of the manufacturing and testing. The test may use one or more of a laser ultrasound test unit, an electronic laser speckle interferometry test unit, an infrared thermography test unit, or an x-ray test unit.

A method and system are presented for use in measuring characteristic(s) of patterned structures. The method utilizes processing of first and second measured data, wherein the first measured data is indicative of at least one Raman spectrum obtained from a patterned structure under measurements using at least one selected optical measurement scheme each with a predetermined configuration of illuminating and/or collected light conditions corresponding to the characteristic(s) to be measured, and the second measured data comprises at least one spectrum obtained from the patterned structure in Optical Critical Dimension (OCD) measurement session. The processing comprises applying model-based analysis to the at least one Raman spectrum and the at least one OCD spectrum, and determining the characteristic(s) of the patterned structure under measurements.

A method for use in measuring one or more characteristics of patterned structures, the method including providing measured data comprising data indicative of at least one Raman spectrum obtained from a patterned structure under measurements using at least one selected optical measurement scheme each with a predetermined configuration of at least one of illuminating and collected light conditions corresponding to the one or more characteristics to be measured, processing the measured data, and determining, for each of the at least one Raman spectrum, a distribution of Raman-contribution efficiency (RCE) within at least a part of the structure under measurements, being dependent on characteristics of the structure and the predetermined configuration of the at least one of illuminating and collected light conditions in the respective optical measurement scheme, and analyzing the distribution of Raman-contribution efficiency and determining the one or more characteristics of the structure.

A method for use in measuring one or more characteristics of patterned structures, the method including providing measured data comprising data indicative of at least one Raman spectrum obtained from a patterned structure under measurements using at least one selected optical measurement scheme each with a predetermined configuration of at least one of illuminating and collected light conditions corresponding to the one or more characteristics to be measured, processing the measured data, and determining, for each of the at least one Raman spectrum, a distribution of Raman-contribution efficiency (RCE) within at least a part of the structure under measurements, being dependent on characteristics of the structure and the predetermined configuration of the at least one of illuminating and collected light conditions in the respective optical measurement scheme, and analyzing the distribution of Raman-contribution efficiency and determining the one or more characteristics of the structure.

A method and system are presented for use in measuring characteristic(s) of patterned structures. The method utilizes processing of first and second measured data, wherein the first measured data is indicative of at least one Raman spectrum obtained from a patterned structure under measurements using at least one selected optical measurement scheme each with a predetermined configuration of illuminating and/or collected light conditions corresponding to the characteristic(s) to be measured, and the second measured data comprises at least one spectrum obtained from the patterned structure in Optical Critical Dimension (OCD) measurement session. The processing comprises applying model-based analysis to the at least one Raman spectrum and the at least one OCD spectrum, and determining the characteristic(s) of the patterned structure under measurements.

Disclosed are a method of inspecting a printing quality of a 3D printing object using a femtosecond laser beam during a 3D printing process, and an apparatus and a 3D printing system for the same. A laser beam is irradiated from a femtosecond laser source disposed coaxially with a 3D printing laser source to inspect a state of the printing object. The laser beam generated by the femtosecond laser source is separated into a pump laser beam and a probe laser beam. The printing laser beam irradiated from a 3D printing laser source or the pump laser beam is irradiated onto a printing object to generate ultrasonic waves. To measure the ultrasonic waves, a probe laser beam is irradiated onto the printing object. The probe laser beam reflected by the printing object is detected. The quality of the printing object is inspected by analyzing the reflected probe laser beam.

A multi-mode approach for real-time inspection of structural components may be applied to rapid, wide area measurement of thickness of thick plate-like structures using full-field multi-mode response measurement and analysis. The approach may allow estimation of thickness from full-field multi-mode response to single-tone ultrasonic excitation in thick plates. The approach may utilize wavenumber information across all available wave modes in order to make wavenumber spectroscopy sensitive to changes in thickness for a broader range of nominal initial thicknesses.

A method for nondestructive measurement of an underlying layer thickness includes irradiating, with a pump laser pulse, a sample to induce generation of an acoustic wave in the sample such that the acoustic wave propagates through the sample over time, where the sample includes a substrate, an underlying layer on the substrate, and an overlying layer on the underlying layer and the underlying layer is isolated from an exterior of the sample by at least the overlying layer, irradiating the sample with a probe laser pulse after irradiating the sample with the pump laser pulse, determining a reflectance variation of the sample over time, based on monitoring a variation of a reflection of the probe laser pulse from the sample over time, to generate a first graph showing a variation of reflectance of the sample over time, and determining a thickness of the underlying layer based on the first graph.

A method and system are presented for use in measuring characteristic(s) of patterned structures. The method utilizes processing of first and second measured data, wherein the first measured data is indicative of at least one Raman spectrum obtained from a patterned structure under measurements using at least one selected optical measurement scheme each with a predetermined configuration of illuminating and/or collected light conditions corresponding to the characteristic(s) to be measured, and the second measured data comprises at least one spectrum obtained from the patterned structure in Optical Critical Dimension (OCD) measurement session. The processing comprises applying model-based analysis to the at least one Raman spectrum and the at least one OCD spectrum, and determining the characteristic(s) of the patterned structure under measurements.

A coherence gated photoacoustic remote sensing system for imaging a subsurface structure in a sample with optical resolution may include an excitation beam source configured to generate an excitation beam that induces ultrasonic signals in the sample at an excitation location; an interrogation team source configured to generate an interrogation team incident on the sample at an interrogation location, a portion of the interrogation beam returning from the sample that is indicative of the generated ultrasonic signals, the interrogation beam being a low-coherent beam; an optical system that focuses the excitation beam onto the sample at an excitation location, and focuses the interrogation beam onto the sample at an interrogation location, at least the interrogation location being below the surface of and within the sample; and a low coherence interferometer that isolates a returning portion of the interrogation beam that corresponds to an interrogation event of the sample.