G01J2001/446

ELECTRONIC SHELF LABEL WITH ACTION TRIGGERING
20230042843 · 2023-02-09 ·

An electronic shelf label, which comprises: a display unit, which is designed for displaying image content, and a communication module, which is designed for wireless communication for the purpose of receiving image data, which represent the image content, and for transferring the image data to the display unit,
characterized in that a detector unit is provided, which is designed for detecting an incorrect positioning, which differs from a desired positioning, of the electronic shelf label, and for outputting an action signal when the incorrect positioning is detected, and in that the electronic shelf label is designed to change the image content when the action signal is present.

LIGHT TO FREQUENCY MODULATORS
20230044817 · 2023-02-09 · ·

A method of measuring light intensity comprising exposing a photodiode to light to cause the photodiode to provide a current of a first polarity, supplying said current to an integrator to integrate said current to provide an integrated output voltage, and comparing the output voltage with a threshold voltage. Charge packages of opposite polarity are applied to said first polarity to reset the integration voltage prior to the start of the integration time. At the end of the integration time, the photodiode is disconnected from said integrator and a reference voltage coupled to the integrator input, whilst a resistance is coupled into the circuit until the comparison signal switches. The comparison signal is monitored to measure a time between the end of the integration time and the switching of the comparison signal to provide a measure of a residual voltage.

SYSTEMS AND METHODS FOR FLASH DETECTION
20180003554 · 2018-01-04 · ·

A flash detection device comprises at least a first and a second sensor module, wherein each of the sensor modules comprises at least a photodiode for detecting an irradiance emitted by a source, and the first sensor module comprises at least an angular efficiency attenuator configured for attenuating the irradiance received by the photodiode according to a predetermined angular efficiency profile, wherein the at least first and second sensor modules are configured for collecting light from substantially the same field of view, and the angular efficiency attenuator of the first sensor module causes the first and second sensor modules to have complementary predetermined angular efficiency profiles, so that, for angles of view within a common field of view of the first and second sensor modules, a combination of irradiance measurements of the first and second sensor modules enables to derive an irradiance source angle of the source.

OPTICAL DEVICES
20230236066 · 2023-07-27 ·

An optical device is provided. The optical device includes a time-of-flight (TOF) sensor array, a photon conversion thin film, and a light source. The photon conversion thin film is disposed above the time-of-flight sensor array. The light source emits light with a first wavelength towards the photon conversion thin film to be converted into light with a second wavelength received by the time-of-flight sensor array. The second wavelength is longer than the first wavelength.

HIGH THROUGHPUT ANALYTICAL SYSTEM FOR MOLECULE DETECTION AND SENSING
20230003648 · 2023-01-05 · ·

The present disclosure describes a throughput-scalable image sensing system for analyzing biological or chemical samples is provided. The system includes a plurality of image sensors configured to detect at least a portion of light emitted as a result of analyzing the biological or chemical samples. The plurality of image sensors is arranged on a plurality of wafer-level packaged semiconductor dies of a single semiconductor wafer. Each image sensor of the plurality of image sensors is disposed on a separate packaged semiconductor die of the plurality of packaged semiconductor dies. Neighboring packaged semiconductor dies are separated by a dicing street; and the plurality of packaged semiconductor dies and a plurality of dicing streets are arranged such that the plurality of packaged semiconductor dies can be diced from the single semiconductor wafer as a group.

INFRARED DETECTING DEVICE

A diode (11) is provided on a substrate (1) and thermally insulated from the substrate (1). A positive feedback circuit (18) provides a positive feedback loop so that when a current of the diode (11) decreases due to a change in temperature of the diode (11), the positive feedback circuit (18) further decreases the current of the diode (11), and when the current of the diode (11) increases, the positive feedback circuit (18) further increases the current of the diode (11).

Ambient light sensor and method

According to one aspect, an ambient-light sensor includes a photodiode configured to generate an electrical signal according to an ambient light, a capacitive-feedback transimpedance amplifier connected at its input to the photodiode for receiving a signal generated by the photodiode and for generating as an output an amplified signal from the signal generated by the photodiode, and an auto-zero switch at the input of the capacitive-feedback transimpedance amplifier. The ambient-light sensor further includes a control circuit including a bootstrap circuit configured to receive an initial positive- or zero-voltage logic control signal, and then generate, from this initial logic control signal, an adapted logic control signal having a first positive voltage level and a second negative voltage control level for controlling the auto-zero switch.

Integrated circuit with sequentially-coupled charge storage and associated techniques comprising a photodetection region and charge storage regions to induce an intrinsic electric field

Described herein are techniques that improve the collection and readout of charge carriers in an integrated circuit. Some aspects of the present disclosure relate to integrated circuits having pixels with a plurality of charge storage regions. Some aspects of the present disclosure relate to integrated circuits configured to substantially simultaneously collect and read out charge carriers, at least in part. Some aspects of the present disclosure relate to integrated circuits having a plurality of pixels configured to transfer charge carriers between charge storage regions within each pixel substantially at the same time. Some aspects of the present disclosure relate to integrated circuits having three or more sequentially coupled charge storage regions. Some aspects of the present disclosure relate to integrated circuits capable of increased charge transfer rates. Some aspects of the present disclosure relate to techniques for manufacturing and operating integrated circuits according to the other techniques described herein.

SENSING DEVICE AND METHOD FOR FABRICATING THE SAME
20230228623 · 2023-07-20 · ·

A sensing device includes a flexible substrate, a reflective layer, a planarization layer, plural switching elements and plural sensing elements. The flexible substrate has plural recesses on a surface. The reflective layer is located on the flexible substrate and conforms to an inner surface of the plural recesses. The planarization layer is disposed on the reflective layer. The plural switching elements are disposed on the planarization layer. The plural sensing elements are disposed on the planarization layer and electrically connected to the plural switching elements respectively. A method for fabricating a sensing device is also provided.

Per-pixel detector bias control

A pixel includes a detector that changes its operating characteristics based on incident energy, an integration capacitor arranged to discharge stored charge through the detector based on changes in the operating characteristics, and an floating gate injection device disposed between the photo-diode and the integration capacitor that controls flow of the charge from the integration capacitor to the detector. The floating gate injection device has a gate, a source electrically coupled to the detector at a first node, and a drain electrically coupled to the integration capacitor. The gate has a control voltage (V.sub.T) stored therein to set to a per-pixel bias gate voltage to control a detector bias voltage of the detector at the first node.