A photosensitive sensor is capable of operating in a global shutter mode and in a rolling shutter mode. The sensor includes at least one pixel with a photosensitive region configured to photogenerate charges. A first transfer gate is configured to transfer photogenerated charges from the photosensitive region to a transfer node. A source-follower transistor is configured to transmit a reading signal to a read node, in the global shutter mode, in a manner controlled by a potential of the photogenerated charges on the transfer node. A second transfer gate is configured to transfer the photogenerated charges from the photosensitive region to the read node in the rolling shutter mode.

The present technology relates to a light receiving element and a ranging system which achieve improvement of pixel characteristics while allowing variation in a breakdown voltage of an SPAD. The light receiving element includes a pixel array in which a plurality of pixels is arranged in a matrix, and a pixel driving unit configured to control respective pixels of the pixel array to be active pixels or non-active pixels. The pixel includes an SPAD, a transistor connected to the SPAD in series, an inverter configured to output a detection signal indicating incidence of a photon on the SPAD, a first transistor which is switched on or off in accordance with control of the pixels to be the active pixels or the non-active pixels, and a second transistor connected to the first transistor in series. The present technology is applicable to a ranging system that detects a range in a depth direction to a subject, for example.

The present invention relates to a terahertz biometric imaging package comprising: an image sensor comprising an antenna pixel array arranged to detect terahertz radiation transmitted from an object, for capturing an image, each antenna pixel comprises a power detector including an antenna structure for receiving terahertz radiation, wherein the power detector is configured to convert a detected terahertz radiation to a sensing signal at a lower frequency than the frequency of the terahertz radiation, a package top cover arranged to cover the antenna pixel array, wherein the image sensor is configured to capture a terahertz image of an object located on an opposite side of the package top cover, a package bottom part arranged on the other side of the antenna pixel array opposite from the package top cover, wherein the antenna pixel array is encapsulated between the package top cover and the package bottom part.

A multifunctional infrared (IR) module is configured for multiple IR applications without an additional microcontroller to be integrated into a computing device and is able to utilize voltage control instead of current control. The multifunctional IR module includes an IR light emitting diode (LED), and an IR receiver (e.g., photodiode or phototransistor). In one embodiment, the multifunctional IR module includes a resistor that is connected to the cathode of the IR LED and the drain of a transistor, with the source of the transistor grounded. In some embodiments, the multifunctional IR module additionally includes a red LED. Various configurations of the multifunctional IR module are able to perform one or more of the following functions: IR in (receiving IR signals), IR out (generating IR signals), heart rate sensing, SpO.sub.2 (oxygen saturation) sensing, distance/proximity detection, gesture detection, LED control, and ambient light detection.

An optical sensing circuit has a plurality of optical sensing units arranged so that the optical sensing circuit is ambient light insensitive or sensitive to light within certain spectrum. The sensitive spectra corresponding to the plurality of optical sensing units are different from one another.

Provided are a light intensity detection circuit, a light intensity detection method and an light intensity detection apparatus. The light intensity detection circuit includes a photoelectric conversion sub-circuit, a source follower sub-circuit, a reset sub-circuit, a read sub-circuit and a sense sub-circuit. The photoelectric conversion sub-circuit generates a corresponding electrical signal according to an incident light signal, and outputs it to a first node; the source follower sub-circuit generates a corresponding voltage signal or current signal according to the electrical signal of the first node and outputs it to a second node; the read sub-circuit reads the voltage signal or current signal of the second node to determine an incident light intensity; the reset sub-circuit provides a voltage at a offset voltage terminal to the first node.

A stroboscope with an integral optical reflective sensor, which can be removable or fixed, contains a light emitting source, a light sensitive receiver, a pulse conditioning circuit, a stroboscope circuit, a blanking circuit, and a stroboscope light source. The light emitting source projects a light beam to a reflective target. The reflected light beam from the reflective target is detected by the light sensitive receiver. The pulse conditioning circuit generates a set of electrical pulses coincident with the reflected light beam which are sent to the stroboscope circuit. Depending on the signal received by the stroboscope circuit, the stroboscope light source is triggered. The blanking circuit prevents false triggering of the stroboscope light source by introducing a time delay. The time delay is applied when the stroboscope light source is switched on and for a finite time after the stroboscope light source is switch off.

A transistor includes (i) a first wire including a semiconducting component configured to operate in an on state at temperatures above a semiconducting threshold temperature and (ii) a second wire including a superconducting component configured to operate in a superconducting state while: a temperature of the superconducting component is below a superconducting threshold temperature and a first input current supplied to the superconducting component is below a current threshold. The semiconducting component is located adjacent to the superconducting component. In response to a first input voltage, the semiconducting component is configured to generate an electromagnetic field sufficient to lower the current threshold such that the first input current exceeds the lowered current threshold.

A photoelectric detection circuit, a photoelectric detection device and an electronic device. The photoelectric detection circuit includes a first detection sub-circuit configured to be exposed to the environment of light to be detected and having an equivalent resistance that varies with the variation of illumination intensity of the light to be detected in the environment; and a second detection sub-circuit configured to be in a state of fixed illumination intensity and having an equivalent resistance that is constant due to the fixed illumination intensity. The first detection sub-circuit is connected in series with the second detection sub-circuit via a first node N1 and the signal output lead Vout is electrically connected with the first node N1 to output detected electrical signals.

An optical scanner unit includes a mirror component, a vibration generator, an optical sensor, and a light shield portion. The mirror component includes a reflective portion for reflecting light. The vibration generator swings the mirror component around a specific swing axis when AC voltage is applied. The optical sensor includes a light emitter and a light receiver for receiving light emitted from the light emitter. The light shield portion is provided to the mirror component so as to swing along with the mirror component. The light shield portion blocks the light emitted from the light emitter. The light receiver further includes a first light receiver that is provided on one swing angle side from a center position of a swing angle range of the light shield portion, and a second light receiver that is provided on the other swing angle side from the center position of the swing angle range.