An infrared thermopile sensor includes a silicon cover having an infrared lens, an infrared sensing chip having duo-thermopile sensing elements, and a microcontroller chip calculating a temperature of an object. The components are in a stacked 3D package to decrease the size of the infrared thermopile sensor. The infrared sensing chip and the microcontroller chip have metal layers to shield the thermal radiation. The conversion from wrist temperature to body core temperature uses detected ambient temperature and fixed humidity or imported humidity level to calculate the body core temperature based on experimental data and curve fitting. The skin temperature compensation can be set differently for different sex gender, different standard deviation of wrist temperature and external relative humidity reading.

An electronic component may include a carrier, and a thermoelectric sensor and a power transistor which are arranged on the carrier. The power transistor may include a base layer containing a transistor material chosen from among gallium nitride, aluminium gallium nitride, gallium arsenide, indium gallium, indium gallium nitride, aluminium nitride, indium aluminium nitride, and mixtures thereof. The electronic component may be configured so that the thermoelectric sensor generates an electric current under the effect of heating from the power transistor.

A multilayer thermoelectric sensor for generating an electric current under the effect of heating includes a support and a thermocouple borne by the support. The thermocouple includes a first thermoelectric member having at least a portion of a bilayer, the layers of which are made of different materials, and a second thermoelectric member having a p-doped semiconductor material and/or a thermoelectric metal. The thermocouple is configured to generate an electron gas at the interface between the layers of the bilayer when the thermoelectric sensor is heated.

A microscale thermocouple probe for intracellular temperature measurements comprises a cantilever structure including a suspended portion extending from a support, where the suspended portion includes first and second conductive lines on a surface thereof. The first and second conductive lines extend along the surface and meet at a tip of the suspended portion to define a thermocouple junction.

An embodiment of the invention may include a semiconductor structure, method of use and method of manufacture. The structure may include a heating element located underneath a temperature-controlled portion of the device. A method of operating the semiconductor device may include providing current to a thin film heater located beneath a temperature-controlled region of the semiconductor device. The method may include performing temperature dependent operations in the temperature-controlled region.

Provided herein is a tungsten-rhenium composite thin film thermocouple based on a surface micropillar array with gas holes. A tungsten-rhenium thin film thermocouple is arranged on a surface of a flat alumina ceramic substrate. Two tails of the tungsten-rhenium thin film thermocouple are respectively connected to a lead wire. A surface of the tungsten-rhenium thin film thermocouple is arrayed with a plurality of micron alumina micropillars to form an alumina micropillar array. Air is filled between the micron alumina micropillars to form the gas holes. The flat alumina ceramic substrate, the tungsten-rhenium thin film thermocouple and the alumina micropillar array form a three-layered laminated structure.

Provided herein is a tungsten-rhenium composite thin film thermocouple based on a surface micropillar array with gas holes. A tungsten-rhenium thin film thermocouple is arranged on a surface of a flat alumina ceramic substrate. Two tails of the tungsten-rhenium thin film thermocouple are respectively connected to a lead wire. A surface of the tungsten-rhenium thin film thermocouple is arrayed with a plurality of micron alumina micropillars to form an alumina micropillar array. Air is filled between the micron alumina micropillars to form the gas holes. The flat alumina ceramic substrate, the tungsten-rhenium thin film thermocouple and the alumina micropillar array form a three-layered laminated structure.

A semiconductor product comprising: a semiconductor substrate and a test structure, the test structure comprising: a thermopile and at least one temperature sensitive element, the at least one temperature sensitive element being located in the substrate, or between the substrate and the thermopile.

A silicon carbide-based micro-electro-mechanical system (MEMS) combined temperature-pressure sensor chip and a preparation thereof. The chip includes a peripheric pressure-measuring unit and a center temperature-measuring unit. The pressure-measuring unit includes a silicon carbide substrate with a raised island and a pressure sensitive diaphragm formed by etching the back of the substrate. The raised island and the pressure-sensitive diaphragm constitute a membrane-island structure. Four piezoresistive strips are arranged symmetrically along a circumferential direction of a root of the pressure-sensitive diaphragm and between the raised island and the pressure-sensitive diaphragm. The temperature-measuring unit includes the raised island and a thin-film thermocouple arranged thereon.

A temperature difference measuring apparatus includes: a bottomed tubular package in which a top face side is opened; a MEMS device disposed on an inner bottom face of the package, the MEMS device comprising at least one thermopile that measures a temperature difference, which is generated in the MEMS device by inflow heat through a bottom of the package; and a heat quantity increasing unit configured to increase a heat quantity flowing out from the MEMS device onto the top face side of the bottomed tubular package.