First, it is judged whether the diamond film is the single-crystal diamond film or the polycrystalline diamond film according to ellipsometric spectrum data and absorption spectrum data, and different calculation methods are selected to obtain the optical constants and the thickness of the diamond film according to spectral data (e.g., the ellipsometric spectrum data and the absorption spectrum data). Additionally, in the single-crystal diamond film, the optical constants and the thickness of the diamond film are obtained through calculation using the Cauchy model. In the polycrystalline diamond film, the spectral region is selected, and the optical constants and the thickness of the diamond film are obtained through calculation according to the oscillator model and the evaluation function MSE.

Metrology is performed on a semiconductor wafer using a system with an apodizer. A spot is formed on the semiconductor wafer with a diameter from 2 nm to 5 nm. The associated beam of light has a wavelength from 400 nm to 800 nm. Small target measurement can be performed at a range of optical wavelengths.

A system includes a reflector attached to a liner of a processing chamber. A light coupling device is to transmit light, from a light source, through a window of the processing chamber directed at the reflector. The light coupling device focuses, into a spectrometer, light received reflected back from the reflector along an optical path through the processing chamber and the window. The spectrometer detects, within the focused light, a first spectrum representative of a deposited film layer on the reflector using reflectometry. An alignment device aligns, in two dimensions, the light coupling device with the reflector until maximization of the focused light received by the light coupling device.

Various embodiments set forth techniques for characterizing films on optically clear substrates using ellipsometry. In some embodiments, a spectroscopic ellipsometer is configured to generate a light beam that has a relatively small spot size and is substantially absorbed by an optically clear substrate, thereby reducing or eliminating reflections from an interface between the substrate and air. Optical simulations can be performed to determine values for various parameters associated with the ellipsometer that minimize the reflections from the interface between the substrate and air and maximize reflections from an interface between a film and the substrate. In addition, graded films that include multiple layers can be analyzed using models of multiple layers.

A single ion imaging-based detection method and device are provided. After being reflected by an electromodulation singularity coupling differential imaging reaction unit, a probe beam from a total internal reflection ellipsometry imager converges on a CCD or CMOS detector, the acquired sensing surface image data is transmitted to a signal processing unit, the common mode noise is eliminated by performing spectral analysis on differential signals of a working sensing surface and a reference sensing surface, the peak intensity of a modulating signal is selected on the spectrum for wave filtering to obtain a real-time signal of interaction of single ions or charged molecules at a solid-liquid interface. Based on the singularity effect at a surface plasma resonance angle of an ellipsometry phase and a corresponding optical signal noise suppression scheme, the present application can achieve real-time observation of the adsorption of single ions or charged molecules at a solid surface.

A multi-purpose in-situ contamination sampler includes an inner frame surrounded by a plurality of removable or attachable pieces, each of which include of a single witness surface configured to collect both particulate and molecular contamination within an environment on a payload or a spacecraft.

A spectroscopic ellipsometry system and method for thin film measurement with high spatial resolution. The system includes a rotating compensator so that spectroscopic ellipsometric and imaging ellipsometric data are collected simultaneously with the same measurement beam. Collecting both ellipsometric data sets simultaneously increases the information content for analysis and affords a substantial increase in measurement performance.

An optical light reflectance measurement system above an imaging member surface measures fountain solution surface light reflectance interference on reflective substrate portions of the imaging member surface in real-time during a printing operation. The measured light reflectance interference corresponds to a thickness of the fountain solution layer and may be used in a feedback loop to actively control fountain solution layer thickness by adjusting the volumetric feed rate of fountain solution added onto the imaging member surface during a printing operation to reach a desired uniform thickness for the printing. This fountain solution monitoring system may be fully automated.

A machine learning model trained to provide metrology measurements for a substrate is provided. Training data generated for a prior substrate processed according to a prior process is provided to train the model. The training data includes a training input including a subset of historical spectral data extracted from a normalized set of historical spectral data collected for the prior substrate during the prior process. The subset of historical spectral data includes an indication of historical spectral features associated with a particular type of metrology measurement. The training data also includes a training output including a historical metrology measurement obtained for the prior substrate, the historical metrology measurement associated with the particular type of metrology measurement. Spectral data is collected for a current substrate processed according to a current process. A subset of current data extracted from a normalized set of the spectral data for the current substrate is provided as input to the trained model. Metrology measurement data for the current substrate is extracted from one or more outputs of the trained model.

A method and device for measuring the profile of the surface of a flat object of unknown materials, including an interferometry measuring system, ellipsometry measuring system, beam splitter for splitting a light beam of a light source into an interferometry light beam and an ellipsometry light beam, and an analysis unit designed to ascertain the profile height in the measured region on the object surface from an analysis beam analyzed in a detector unit of the interferometry measuring system and a sensor beam received in an ellipsometry sensor. The interferometry measuring system includes a beam divider, reference mirror, and the detector unit, and the ellipsometry measuring system includes a polarizer for polarizing an ellipsometry light beam and transmitting same onto the measuring region on the object surface as well as the ellipsometry sensor, which includes a polarization filter in order to determine the polarization state of a received sensor beam.