Patent classifications
G01Q70/06
Probe card for characterizing processes of submicron semiconductor device fabrication
Probe cards for probing highly-scaled integrated circuits are provided. A probe card includes a backplane and an array of probes extending from the backplane. Each of the probes includes a cantilever member and a probe tip. A first end of the cantilever member is coupled to the backplane, such that the cantilever member extends from the backplane. The probe tip extends from a second end of the cantilever member. The probes are fabricated from semiconductor materials. Each probe is configured to transmit electrical signals between the backplane and a device under test (DUT), via corresponding electrodes of the DUT. The probes are highly-scaled such that the feature size and pitch of the probes matches the highly-scaled feature size and pitch of the DUT's electrodes. The probes comprise atomic force microscopy (AFM) probes that are enhanced for increased electrical conductivity, elasticity, lifetime, and reliability.
Probe card for characterizing processes of submicron semiconductor device fabrication
Probe cards for probing highly-scaled integrated circuits are provided. A probe card includes a backplane and an array of probes extending from the backplane. Each of the probes includes a cantilever member and a probe tip. A first end of the cantilever member is coupled to the backplane, such that the cantilever member extends from the backplane. The probe tip extends from a second end of the cantilever member. The probes are fabricated from semiconductor materials. Each probe is configured to transmit electrical signals between the backplane and a device under test (DUT), via corresponding electrodes of the DUT. The probes are highly-scaled such that the feature size and pitch of the probes matches the highly-scaled feature size and pitch of the DUT's electrodes. The probes comprise atomic force microscopy (AFM) probes that are enhanced for increased electrical conductivity, elasticity, lifetime, and reliability.
METHOD AND DEVICE FOR SIMULTANEOUS INDEPENDENT MOTION MEASUREMENT OF MULTIPLE PROBES IN ATOMIC FORCE MICROSCOPE
A device capable of simultaneous independent motion measurement of multiple probes in an atomic force microscope includes at least two cantilever arms arranged in parallel. The end of each cantilever arm is provided with a needle tip. The surface of each cantilever arm is provided with a grating structure with a periodic distribution rule for reflecting laser irradiated on the grating structure and receiving the laser through reflected light detectors. The discrimination and motion measurement includes the steps of irradiating the measurement laser of different wavelengths on the back surfaces of multiple probes through the same light path at the same time, adopting the grating structures of different feature sizes as physical labels of the multiple probes and reflecting high-order reflected light of the laser of different wavelengths by the grating structures at different angles to separate the light path.
INTEGRATED DUAL-PROBE RAPID IN-SITU SWITCHING MEASUREMENT METHOD AND DEVICE OF ATOMIC FORCE MICROSCOPE
An atomic force microscope has dual probes composed of a hinge structure, two cantilever beams and needle tips arranged on free ends of the cantilever beams. The hinge structure is a U-shaped body having two ends respectively extended with a first cantilever beam and a second cantilever beam. The free end of the first cantilever beam and the free end of the second cantilever beam are respectively provided with a first needle tip and a second needle tip. The integrated dual probes is operated by the driving function of the probe clamp. Therefore, only a set of motion control and measurement system of the atomic force microscope is required to realize the rapid in-situ switching function of the dual probes.
INTEGRATED DUAL-PROBE RAPID IN-SITU SWITCHING MEASUREMENT METHOD AND DEVICE OF ATOMIC FORCE MICROSCOPE
An atomic force microscope has dual probes composed of a hinge structure, two cantilever beams and needle tips arranged on free ends of the cantilever beams. The hinge structure is a U-shaped body having two ends respectively extended with a first cantilever beam and a second cantilever beam. The free end of the first cantilever beam and the free end of the second cantilever beam are respectively provided with a first needle tip and a second needle tip. The integrated dual probes is operated by the driving function of the probe clamp. Therefore, only a set of motion control and measurement system of the atomic force microscope is required to realize the rapid in-situ switching function of the dual probes.
TEST APPARATUS AND TEST METHOD THEREOF
A test apparatus includes a movable stage to support a sample, tips above the stage that have different shapes and alternately perform profiling and milling on the sample, a tip stage connected to a cantilever coupled to the tips, the tip stage to adjust a position of the cantilever, a position sensor to obtain information about a positional relationship between the tips and the sample, a stage controller to control movements of the stage and the tip stage, based on the information about the positional relationship, and a tip controller to select the tips for performing the profiling or milling and to determine conditions for performing milling, wherein a depth of the sample being processed by the milling in the first direction is controlled based on a relationship between a distance between the tips and the sample and a force between the tips and the sample.
Systems and methods for manufacturing nano-electro-mechanical-system probes
Systems and methods for manufacturing multiple integrated tip probes for scanning probe microscopy. According to an embodiment is a microscope probe configured to analyze a sample, the microscope probe including: a movable probe tip including a terminal probe end; a first actuator configured to displace the movable probe tip along a first axis; and a detection component configured to detect motion of the movable probe tip in response to an applied signal; where the moveable probe tip comprises a metal layer affixed to a supporting layer, at least a portion of the metal layer at the terminal probe end extending past the supporting layer.
Systems and methods for manufacturing nano-electro-mechanical-system probes
Systems and methods for manufacturing multiple integrated tip probes for scanning probe microscopy. According to an embodiment is a microscope probe configured to analyze a sample, the microscope probe including: a movable probe tip including a terminal probe end; a first actuator configured to displace the movable probe tip along a first axis; and a detection component configured to detect motion of the movable probe tip in response to an applied signal; where the moveable probe tip comprises a metal layer affixed to a supporting layer, at least a portion of the metal layer at the terminal probe end extending past the supporting layer.
SYSTEMS AND METHODS FOR MANUFACTURING NANO-ELECTRO-MECHANICAL-SYSTEM PROBES
A method for implementing a transistor using multiple integrated probe tips is provided. The method comprises the steps of (1) providing a sample; (2) providing a microscope probe comprising a plurality of probe tips; (3) contacting a first outer probe tip of the plurality of probe tips to the sample, wherein he first outer probe tip is configured to act as a source terminal for a transistor; (4) contacting a second outer probe tip of the plurality of probe tips to the sample, wherein the second outer probe tip is configured to act as a drain terminal for the transistor; (5) using an inner probe tip of the plurality of probe tips as a gate terminal for the transistor; and (6) characterizing the sample with the plurality of probe tips.
SYSTEMS AND METHODS FOR MANUFACTURING NANO-ELECTRO-MECHANICAL-SYSTEM PROBES
A method for implementing a transistor using multiple integrated probe tips is provided. The method comprises the steps of (1) providing a sample; (2) providing a microscope probe comprising a plurality of probe tips; (3) contacting a first outer probe tip of the plurality of probe tips to the sample, wherein he first outer probe tip is configured to act as a source terminal for a transistor; (4) contacting a second outer probe tip of the plurality of probe tips to the sample, wherein the second outer probe tip is configured to act as a drain terminal for the transistor; (5) using an inner probe tip of the plurality of probe tips as a gate terminal for the transistor; and (6) characterizing the sample with the plurality of probe tips.