An assembly including an insulated gate bipolar transistor (IGBT) is provided. The IGBT is coupled with a gate driver for receiving a gating signal to drive the IGBT and providing a feedback signal of the IGBT which indicates a change of a collector-emitter voltage of the IGBT. The assembly further includes a failure mode detection unit for determining whether the IGBT is faulted based on a timing sequence of the gating signal and feedback signal. The failure mode detection unit is capable of differentiating fault types including a gate driver fault, a failed turn-on fault, a short-circuit fault, a turn-on over-voltage fault and a turn-off over-voltage fault. Accordingly, an IGBT failure mode detection method is also provided.

The disclosure discloses an IGBT module reliability evaluation method and device based on bonding wire degradation, which belong to the field of IGBT reliability evaluation. The realization of the method includes: obtaining a relationship between a IGBT chip conduction voltage drop U.sub.ces and an operating current I.sub.c along with a chip junction temperature T.sub.c; for an IGBT module under test, obtaining the conduction voltage drop U.sub.ces-c of the IGBT chip through the operating current I.sub.c and the chip junction temperature T.sub.c; obtaining an external conduction voltage drop U.sub.ces-m of the IGBT module by using a voltmeter; performing subtraction to obtain a voltage drop at a junction of a IGBT chip and a bonding wire, and combining the operating current to obtain a resistance at the junction; determining that the IGBT module has failed when the resistance at the junction increases to 5% of an equivalent impedance of the IGBT module.

The disclosure discloses an IGBT module reliability evaluation method and device based on bonding wire degradation, which belong to the field of IGBT reliability evaluation. The realization of the method includes: obtaining a relationship between a IGBT chip conduction voltage drop U.sub.ces and an operating current I.sub.c along with a chip junction temperature T.sub.c; for an IGBT module under test, obtaining the conduction voltage drop U.sub.ces-c of the IGBT chip through the operating current I.sub.c and the chip junction temperature T.sub.c; obtaining an external conduction voltage drop U.sub.ces-m of the IGBT module by using a voltmeter; performing subtraction to obtain a voltage drop at a junction of a IGBT chip and a bonding wire, and combining the operating current to obtain a resistance at the junction; determining that the IGBT module has failed when the resistance at the junction increases to 5% of an equivalent impedance of the IGBT module.

A passive slide screw load pull tuner structure can be used on-wafer, in millimeter-wave frequencies from 25 to 110 GHz and above. It uses special tuning probe brackets and a short slabline mounted below the tuner housing, which holds the control gear. The tuner is mounted under an angle matching the angle of the wafer-probe, is connected directly of the wafer-probe and ensures optimum tuning range.

A passive slide screw load pull tuner structure can be used on-wafer, in millimeter-wave frequencies from 25 to 110 GHz and above. It uses special tuning probe brackets and a short slabline mounted below the tuner housing, which holds the control gear. The tuner is mounted under an angle matching the angle of the wafer-probe, is connected directly of the wafer-probe and ensures optimum tuning range.

An integrated hybrid (active-passive) harmonic impedance tuner uses a fixed and an adjustable directional coupler (wave-probe) and a number of independent wideband tuning probes, all mounted inside the same slabline and housing. The tuning probes are inserted between the fixed and the mobile wave-probes. The fixed wave-probe samples a portion of the forward travelling signal at the fundamental frequency, injects it into a power amplifier and the mobile wave-probe adjusts the phase and amplitude of the amplified signal and injects it back into the slabline towards the DUT. The mobile carriages and tuning probes are automated. The mobile wave-probe is either fully or partially (horizontal only) automated or fully manually controlled. Feedback signal phase and amplitude control is obtained through the horizontal and vertical movement of the mobile wave-probe.

Load Pull tuning pattern and probe movement algorithms allow creating a test pattern allowing to avoid instability regions and spurious oscillations of microwave transistors during testing using slide screw load and source tuners. The impedances are selected based on the stability circle and instability area on the Smith chart and the probe movement trajectory allows both avoiding the static and circumventing the transient crossing through the instability area. All tuning commands are saved in a pattern file.

The present disclosure relates to power semiconductor modules. The teachings thereof may be embodied in modules with a power semiconductor component and methods, as well as a circuit arrangement. For example, a method may include: developing a thermal model of the power semiconductor module at a reference time point; establishing a reference temperature based on the thermal model; measuring a temperature-sensitive electrical parameter of the power semiconductor module during operation of the power semiconductor module; determining a current temperature from the measured temperature-sensitive electrical parameter of the power semiconductor module; calculating a temperature difference between the current temperature and the reference temperature; and determining a deterioration of the power semiconductor module based on the calculated temperature difference.