Examples relate to a current sensor and to a method for sensing a strength of an electric current using two groups of magnetic sensing probes. The current sensor includes a first group and a second group of magnetic sensing probes. The current sensor comprises sensor circuitry coupled to the first and the second group of magnetic sensing probes. The sensor circuitry is configured to determine a first differential magnetic field measurement of a magnetic field using probes of the first group of magnetic sensing probes. The sensor circuitry is configured to determine a second differential magnetic field measurement of the magnetic field using probes of the second group of magnetic sensing probes. The sensor circuitry is configured to determine a strength of the electric current based on a difference between the first differential magnetic field measurement and the second differential magnetic field measurement.

An injection device is disclosed herein. The injection device is utilized to inject a liquid onto a test area of a semiconductor element. The injection device includes a base, a reservoir, a first testing pipe, a cleaning pipe and a liquid-draining pipe. The reservoir set on the base is provided with at least one connecting port and a dropping port, wherein the dropping port is against the test area of the semiconductor element. The first testing pipe, the cleaning pipe and the liquid-draining pipe are connected to at least one connecting port, wherein a first liquid is injected from the first testing pipe into the reservoir, and wherein the a cleaning liquid is injected from the cleaning pipe into the reservoir to clean the reservoir and the test area. The dropping port is utilized to drain off the first testing liquid and the cleaning liquid in the reservoir. A semiconductor testing system utilizing the injection device and its testing method are also provided herein.

The present disclosure provides a method and system for creating dipole moment model. The method is applied to a tested circuit and includes: performing a near-field measurement on the tested circuit, to obtain a near-field electric field and a near-field magnetic field related to the tested circuit; performing a two-dimensional divergence calculation on the near-field electric field and the near-field magnetic field, to obtain a near-field electric divergence field and a near-field magnetic divergence field; performing a convolution calculation on the near-field electric divergence field and the near-field magnetic divergence field with a digital filter; and building a dipole moment matrix equivalent to the tested circuit according to a result of the convolution calculation.

A method for determining the conversion factor between a voltage applied to the gates of a system and the tunnel coupling Γ.sub.QD between both quantum dots of the pair of quantum dots, the system including a pair of quantum dots containing two charged particles and including a first quantum dot and a second quantum dot, and the tunnel coupling Γ.sub.QD between both quantum dots of the pair of quantum dots being modulated using a plurality of gates, a set of voltages applied to the gates of the plurality of gates defining an operating point of the system, the pair of quantum dots being in one charge state from the charge state {2,0}, the charge state {1,1} and the charge state {0,2}, and both charged particles adopting either a singlet spin state S or a triplet spin state T0 or a triplet spin state T+/T−.

A test device for testing an electronic device has a base, a first mounting plane, a first support element, a plurality of second support elements, a plurality of test elements, and a control unit. The first mounting plane is mounted on the base. The first support element is slidable on the first mounting plane, the second support elements are slidable on the first support element, and the test elements are slidable on the second support elements. The control unit electrically coupled to the test elements controls the test elements to provide impact force on the electronic device.

Symbolic backend for execution of quantum programs is provided. A parser receives an input qasm and parses it as a circuit graph. A layering component segments the circuit graph into multiple layers. An evaluation engine reads respective layers, translates the respective layers into a mathematic expression over qubits, and performs a simplification of the input qasm. A checker determines whether the input qasm and the simplified qasm are equivalent.

A fast algorithm is used to study the transient behavior due to the step-like pulse. This algorithm consists of two parts: The algorithm I reduces the computational complexity to T.sup.0N.sup.3 for large systems as long as T<N; The algorithm II employs the fast multipole technique and achieves scaling T.sup.0N.sup.3whenever T<N.sup.2 beyond which it becomes T log.sub.2 N for even longer time. Hence it is of order O(1) if T<N.sup.2. Benchmark calculation has been done on graphene nanoribbons with N=10.sup.4 and T=10.sup.8. This new algorithm allows many large scale transient problems to be solved, including magnetic tunneling junctions and ferroelectric tunneling junctions that could not be achieved before.

This application relates to a method for analyzing crosstalk between qubits, performed by a terminal. The method includes identifying a first qubit and a second qubit; performing spectral quantum process tomography on quantum states corresponding to the first qubit and the second qubit, to obtain a first eigenspectrum of a signal function corresponding to the first qubit and a second eigenspectrum of a signal function corresponding to the second qubit; performing spectral quantum process tomography on the quantum states corresponding to the first qubit and the second qubit, to obtain a third eigenspectrum of a common signal function of the first qubit and the second qubit; and determining a crosstalk intensity between the first qubit and the second qubit based on the first eigenspectrum, the second eigenspectrum, and the third eigenspectrum.

Integrated circuits are described that utilize internal state machine-driven logic elements (e.g., flops) within input and/or output wrapper chains that are used to test internal core logic of the integrate circuit. One or more individual logic elements of the wrapper chains within the integrated circuit is implemented as a multi-flop state machine rather than a single digital flip-flop. As multi-flop state machines, each enhanced logic element of a wrapper chain is individually configurable to output pre-selected values so as to disassociate the state machine-driven flops from signal transmission delays that may occur in the input or output wrapper chains of the integrated circuit.

A test device configured to test a device under test (DUT) performing an interface of a pulse amplitude modulation (PAM) operation includes a logic generation/determination device configured to generate multiple bits corresponding to a test pattern, first and second drivers configured to generate respective first and second non return to zero (NRZ) signals according to a logic state of respective first and second bits among the multiple bits and output the respective generated first and second NRZ signals via respective first and second channels. The first NRZ signal has a first high level or a first low level according to the logic state of the first bit, and the second NRZ signal has a second high level or a second low level according to the logic state of the second bit. The first and second high levels are different from each other.