A board adapter device includes: a first adapter structure provided with a gold finger matched with a board of a target memory module, a second adapter structure provided with a connector matched with the gold finger, and a signal transmission structure including a first and second transmission module. The first transmission module is for connecting a data signal line, a clock signal line, an address signal line, and a control signal line of the gold finger to corresponding connecting lines of the connector. The second transmission module is configured to, when receiving a power input signal, convert the power input signal into a power output signal matched with a power supply of the target memory module, and transmit the power output signal to a power signal line of the connector.

A stacked semiconductor device may include: a base die; and a plurality of core dies stacked over the base die and coupled to each other through a plurality of through-electrodes and a reference through-electrode, wherein the base die includes a first test circuit suitable for transferring a test oscillating signal to at least one target through-electrode among the through-electrodes, and outputting a test output signal by comparing a test base signal generated based on the test oscillating signal, with a test core signal transferred through the reference through-electrode, during a test operation; and wherein each of the core dies includes a second test circuit suitable for generating the test core signal corresponding to the test oscillating signal transferred through the target through-electrode, and transferring the test core signal to the reference through-electrode, during the test operation.

A memory device includes a first wafer including a first bonding pad disposed on a first surface; a second wafer, including a second bonding pad disposed on a second surface of the second wafer, the second surface of the second wafer bonded on the first surface of the first wafer; and a first test pattern. The first test pattern includes a pair of first test pads disposed on the first surface and electrically coupled to each other; a pair of second test pads disposed on the second surface of the second wafer and respectively coupled to the pair of first test pads, when no misalignment failure between the first bonding pad and the second bonding pad occurs; and a pair of third test pads disposed on a third surface of the second wafer, which is opposite to the second surface, and respectively coupled to the pair of second test pads.

A test coverage rate improvement system for pins of tested circuit board and a method thereof are disclosed. In the system, partial pins of a circuit board connector in a tested circuit board are not electrically connected to the boundary scan chip, test pins of the test pin board are pressed with the partial pins by a fixture of a boundary scan interconnect testing workstation to electrically connect the test pins to the partial pins. A test access port controller receives a detection signal for detecting the partial pins, which are not electrically connected to the boundary scan chip, of the circuit board connector through the test pin board from the test adapter card, and determines whether conduction is formed based on the detection signal, thereby achieving the technical effect of improving a test coverage rate for the pins of the tested circuit board.

A chip package and method of fabricating the same are described herein. The chip package includes a high speed data transmission line that has an inter-die region through which a signal transmission line couples a first die to a second die. The signal transmission line has a resistance greater than an equivalent base resistance (EBR) of a copper line, which reduces oscillation within the transmission line.

An input/output (I/O) block for a semiconductor integrated circuit (IC), which includes: at least one I/O buffer, configured to define at least one signal path in respect of a connection to a remote I/O block via a communication channel, each signal path causing a respective signal edge slope; and an I/O sensor, coupled to the at least one signal path and configured to generate an output signal indicative of one or both of: (a) a timing difference between the signal edge for a first signal path and the signal edge for a second signal path, and (b) an eye pattern parameter for one or more of the at least one signal path.

Disclosed is a plurality of through-silicon vias (TSVs) and related systems, methods, and devices. An electronic device includes a stack of chips, a first TSV, and a second TSV. The stack of chips includes one or more side edges at a perimeter of the stack of chips. A TSV zone of the stack of chips is within a predetermined distance from the one or more side edges. The first TSV is within the TSV zone of the stack of chips at a first distance from the one or more side edges. The second TSV is within the TSV zone of the stack of chips at a second distance from the one or more side edges. The second distance is shorter than the first distance.

An integrated circuit (IC) with a TSV test circuit, a TSV test method are provided, pertaining to IC technologies. The IC may include a first TSV, a second TSV and a phase detector. A first end of the first TSV may be coupled to a predetermined signal output, and a second end of the first TSV may be coupled to a first end of the second TSV. A second end of the second TSV may be coupled to a first input of the phase detector, and a second input of the phase detector may be coupled to the predetermined signal output. The phase detector may be configured to determine a phase difference between signals at the first and the second inputs. In this IC, a defective TSV can be identified and segregated with a redundant TSV. This IC facilitates efficient fault correction and signal routing in the IC.

A semiconductor device includes a plurality of first micro-bumps suitable for transferring normal signals; a plurality of a second micro-bumps suitable for transferring test signals; and a test circuit including a plurality of scan cells respectively corresponding to the first and second micro-bumps. The test circuit is suitable for applying signals stored in the respective scan cells to the first and second micro-bumps, feeding back the applied signals from the first and second micro-bumps to the respective scan cells, and sequentially outputting the signals stored in the scan cells to a test output pad.

A memory device includes a first wafer including a first bonding pad disposed on a first surface; a second wafer, including a second bonding pad disposed on a second surface of the second wafer, the second surface of the second wafer bonded on the first surface of the first wafer; and a first test pattern. The first test pattern includes a pair of first test pads disposed on the first surface and electrically coupled to each other; a pair of second test pads disposed on the second surface of the second wafer and respectively coupled to the pair of first test pads, when no misalignment failure between the first bonding pad and the second bonding pad occurs; and a pair of third test pads disposed on a third surface of the second wafer, which is opposite to the second surface, and respectively coupled to the pair of second test pads.