A semiconductor device includes a plurality of first micro-bumps suitable for transferring normal signals; a plurality of a second micro-bumps suitable for transferring test signals; and a test circuit including a plurality of scan cells respectively corresponding to the first and second micro-bumps. The test circuit is suitable for applying signals stored in the respective scan cells to the first and second micro-bumps, feeding back the applied signals from the first and second micro-bumps to the respective scan cells, and sequentially outputting the signals stored in the scan cells to a test output pad.

The present disclosure describes exemplary methods and systems that are applicable for hardware authentication, counterfeit detection, and in-field tamper detection in both printed circuit board and/or integrated circuit levels by utilizing random variations in boundary-scan path delay and/or current in the industry-standard JTAG-based design-for-test structure to generate unique device identifiers.

A method of performing error detection within an integrated circuit chip analyses transactions communicated over interconnect circuitry of the integrated circuit chip to detect whether a message contains a data error. A memory of the integrated circuit chip coupled to the interconnect circuitry is scanned to detect whether there is a data error stored in the memory, and in response to detecting a data error in a transaction communicated over the interconnect circuitry and/or a data error stored in the memory, a dedicated action indicative of a data error is performed.

A test device for testing an electronic device has a base, a first mounting plane, a first support element, a plurality of second support elements, a plurality of test elements, and a control unit. The first mounting plane is mounted on the base. The first support element is slidable on the first mounting plane, the second support elements are slidable on the first support element, and the test elements are slidable on the second support elements. The control unit electrically coupled to the test elements controls the test elements to provide impact force on the electronic device.

Various aspects of the disclose techniques relate to techniques of testing interconnects in stacked designs. A single-pulse signal, generated by a first circuit state element on a first die, is applied to a first end of an interconnect and captured at a second end of the interconnect using a clock port of a second circuit state element on a second die. A faulty interconnect may cause the single-pulse signal too distorted to reach the threshold voltage of the second circuit element.

An input/output (I/O) block for a semiconductor integrated circuit (IC), which includes: at least one I/O buffer, configured to define at least one signal path in respect of a connection to a remote I/O block via a communication channel, each signal path causing a respective signal edge slope; and an I/O sensor, coupled to the at least one signal path and configured to generate an output signal indicative of one or both of: (a) a timing difference between the signal edge for a first signal path and the signal edge for a second signal path, and (b) an eye pattern parameter for one or more of the at least one signal path.

A bonded structure is disclosed. The bonded structure can include a first element that has a first plurality of contact pads. The first plurality of contact pads includes a first contact pad and a second redundant contact pad. The bonded structure can also include a second element directly bonded to the first element without an intervening adhesive. The second element has a second plurality of contact pads. The second plurality of contact pads includes a third contact pad and a fourth redundant contact pad. The first contact pad is configured to connect to the third contact pad. The second contact pad is configured to connect to the fourth contact pad. The bonded structure can include circuitry that has a first state in which an electrical signal is transferred to the first contact pad and a second state in which the electrical signal is transferred to the second contact pad.

The present disclosure provides a semiconductor device. The semiconductor device includes: a first cell, a dielectric layer, and a snorkel structure. The first cell has an output terminal. The dielectric layer is disposed on the first cell. The snorkel structure is disposed in the dielectric layer. The snorkel structure includes a first conductive structure, a first conductive layer, and a second conductive structure. The first conductive layer is electrically connected to the output terminal of the cell. The first conductive layer is disposed on and electrically connected to the first conductive structure. The second conductive structure is disposed on and electrically connected to the first conductive layer. The second conductive structure has a topmost conductive layer buried in the dielectric layer.

An input/output (I/O) block for a semiconductor integrated circuit (IC), which includes: at least one I/O buffer, configured to define at least one signal path in respect of a connection to a remote I/O block via a communication channel, each signal path causing a respective signal edge slope; and an I/O sensor, coupled to the at least one signal path and configured to generate an output signal indicative of one or both of: (a) a timing difference between the signal edge for a first signal path and the signal edge for a second signal path, and (b) an eye pattern parameter for one or more of the at least one signal path.

The present disclosure describes a method that includes scanning a circuit layout and identifying layout regions of the circuit layout. The method further includes placing unit cells in a layout region of the layout regions and forming a micro pad structure at a border of a unit cell of the unit cells. The micro pad structure includes interconnect structures that are electrically connected to the unit cell.