Methods, devices, and systems for welding optical fibers and perforated elements by pulsed laser beam are provided. In one aspect, a method includes focusing a pulsed laser beam onto a region of a joining surface formed by an outer circumference of an optical fiber and an inner circumference of a hole of a perforated element, a beam direction of the pulsed laser beam running in an axial direction of the joining surface, and moving a laser focus of the pulsed laser beam in the region axially in or counter to the beam direction to produce at least one weld seam in the region. The optical fiber and the perforated element are locally melted in the region by the pulsed laser beam focused into a material of the optical fiber and a material of the perforated element and are thereby welded to one another.

A coupling alignment device and method for a laser chip and a silicon-based optoelectronic chip are disclosed. The device comprises a transfer mold which includes a substrate, first protrusions, and second protrusions. The first protrusions are provided with through holes and are used for being clamped into first recesses in the laser chip; and the second protrusions are used for being clamped into second recesses in the silicon-based optoelectronic chip. The coupling alignment is achieved by etching the first recesses in the laser chip, etching the second recesses in the silicon-based optoelectronic chip, etching the first protrusions, the second protrusions, and the through holes in the transfer mold. A flip-chip suction nozzle is connected with the transfer mold, which is in alignment with the laser chip, and picks up the laser chip by means of the through holes. Then, the laser chip is assembled on the silicon-based optoelectronic chip by aligning and contacting the transfer mold with the silicon-based optoelectronic chip. The method is of high precision, high efficiency, low costs, and can achieve large-scale and mass production.

An integrated optical device includes: a mounting base; an optical semiconductor device which is provided on a surface of the mounting base; a substrate; and an optical waveguide which is provided on a surface of the substrate, wherein an incident surface of the optical waveguide is disposed to face an emission surface of the optical semiconductor device, wherein light emitted from the optical semiconductor device is able to be incident to the optical waveguide, wherein the optical semiconductor device is connected to the mounting base through a metal layer, wherein the mounting base is connected to the substrate through the other metal layer, and wherein a mounting base bottom surface on the side opposite to a surface of the mounting base and a substrate bottom surface on the side opposite to a surface of the substrate are provided on the substantially same plane.

An optical axis alignment method may include the steps of taking an image of a lens holder and a holder base to obtain contour information before laser irradiation, detecting location information about a light path of a light beam which exits from a collimating lens, adjusting the position of the collimating lens by plastically deforming via laser irradiation, taking an image of a contour of a lens holder and a base member to obtain new contour information and detecting new location information about a light path of a light beam which exits from the collimating lens. If the accuracy is not within the predetermined allowable limits, the laser irradiation condition is corrected based on the contour information and/or the location information obtained both before and after the laser irradiation and the lens position adjustment is repeated.

A Michelson interference optical fiber temperature sensor for detecting fringe contrast change is provided. It includes a light source, an optical fiber coupler connected to a first optical fiber and a second optical fiber, a coarse wavelength division multiplexer, a first photodetector, a second photodetector, a display device, and a processing circuit connected to the display device. The light source, optical fiber coupler and coarse wavelength division multiplexer are connected sequentially in that order. The coarse wavelength division multiplexer is connected to the first photodetector and the second photodetector individually. The first photodetector and the second photodetector are connected to the processing circuit. An end of the first optical fiber or the second optical fiber facing away from the optical fiber coupler is connected to a semiconductor. It has advantages of simple and fast manufacturing process, safe and reliable sensor, stable signal, low cost, high sensitivity and high precision.

A bi-directional optical module that provides an Rx unit and a Tx unit, where optical axes are perpendicular to each other, is disclosed. The optical module provides a housing that installs a WDM filter therein and assembles the coupling unit in a surface through the front alignment unit, the Tx unit in another surface opposite to the former surface, and the Rx unit in still another surface connecting the former two surfaces through the rear alignment unit. The axes of the Tx unit and the coupling unit are in parallel to each other, but the axis of the Rx unit is in perpendicular to the former two axes. The Rx unit installs a photodiode (PD) with an optically sensitive surface leveled with the surface of the rear alignment unit to which the Rx unit is attached.

A multilayer stack comprises a surface wherein a predetermined region is defined for enclosing a device provided on the multilayer stack, the region being encircled by a welding zone defined on the surface, the welding zone being suitable for being welded by a welding radiation beam to a capping structure. It also comprises a first layer embedded within the multilayer stack, including at least one embedded component suitable for being functionally connected to the device provided on the multilayer stack. It furthermore comprises at least a second layer over the first layer comprising a shielding structure positioned between the at least one component of the first layer and the welding zone defined on the surface, the shielding structure being adapted to limit the welding depth of the welding radiation beam provided on the welding zone.

An optical device according to one embodiment includes an optical element, a sleeve including a receptacle portion and an insertion portion, and a base having a lower plate having a main surface with the optical element being mounted thereon and a side wall having a hole with the insertion portion of the sleeve optically coupled with the optical element inserted into the hole. A step difference at a position lower than the main surface is formed at a lower position of the hole in the side wall.

A multilayer stack comprises a surface wherein a predetermined region is defined for enclosing a device provided on the multilayer stack, the region being encircled by a welding zone defined on the surface, the welding zone being suitable for being welded by a welding radiation beam to a capping structure. It also comprises a first layer embedded within the multilayer stack, including at least one embedded component suitable for being functionally connected to the device provided on the multilayer stack. It furthermore comprises at least a second layer over the first layer comprising a shielding structure positioned between the at least one component of the first layer and the welding zone defined on the surface, the shielding structure being adapted to limit the welding depth of the welding radiation beam provided on the welding zone.

A coupling alignment device and method for a laser chip and a silicon-based optoelectronic chip are disclosed. The device comprises a transfer mold which includes a substrate, first protrusions, and second protrusions. The first protrusions are provided with through holes and are used for being clamped into first recesses in the laser chip; and the second protrusions are used for being clamped into second recesses in the silicon-based optoelectronic chip. The coupling alignment is achieved by etching the first recesses in the laser chip, etching the second recesses in the silicon-based optoelectronic chip, etching the first protrusions, the second protrusions, and the through holes in the transfer mold. A flip-chip suction nozzle is connected with the transfer mold, which is in alignment with the laser chip, and picks up the laser chip by means of the through holes. Then, the laser chip is assembled on the silicon-based optoelectronic chip by aligning and contacting the transfer mold with the silicon-based optoelectronic chip. The method is of high precision, high efficiency, low costs, and can achieve large-scale and mass production.