According to one embodiment, a display device includes a first substrate and a second substrate. The first substrate includes a first switching element, a second switching element, a first organic insulating layer, a second organic insulating layer, a third organic insulating layer, a first connection electrode electrically connected to the first switching element, a second connection electrode electrically connected to the first connection electrode, a pixel electrode electrically connected to the second connection electrode, and a photoelectric conversion element electrically connected to the second switching element.

Provided is a light modulation element including a first contact layer, a second contact layer, an active layer provided between the first contact layer and the second contact layer, a first contact plug provided between the first contact layer and the active layer, and a second contact plug provided between the second contact layer and the active layer, wherein a width of at least one of the first contact plug and the second contact plug is less than a width of the active layer.

A laser source includes a first laser device configured to generate a first laser beam having a first wavelength, a second laser device configured to generate a second laser beam having a second wavelength, which is different from the first wavelength, and a non-linear crystal configured to receive simultaneously the first and second laser beams and to generate a third laser beam that has a third wavelength, which is larger than each of the first and second wavelengths. The non-linear crystal has a length and a width, and a variable poling period is distributed across the width so that the third wavelength varies within a given wavelength range based on an incident position of the first and second laser beams along the width of the non-linear crystal.

A high-power electro-optic modulator (EOM) is formed to use specialized electrodes of a material selected to have a CTE that matches the CTE of the modulator's crystal. Providing CTE matching reduces the presence of stress-induced birefringence, which is known to cause unwanted modulation of the propagating optical signal. The specialized electrodes are preferably formed of a CuW metal matrix composite having a W/Cu ratio selected to create the matching CTE value. Advantageously, the CuW-based electrodes also exhibit a thermal conductivity about an order of magnitude greater than conventional electrode material (brass, Kovar) and thus provide additional thermal stability to the EOM's performance.

Examples described herein relate to an optical device that entails phase shifting an optical signal. The optical device includes an optical waveguide having a first semiconductor material region and a second semiconductor material region formed adjacent to each other and defining a junction therebetween. Further, the optical device includes an insulating layer formed on top of the optical waveguide. Moreover, the optical device includes a III-V semiconductor layer formed on top of the insulating layer causing an optical mode of an optical signal passing through the optical waveguide to overlap with the first semiconductor material region, the second semiconductor material region, the insulating layer, and the III-V semiconductor layer thereby resulting in a phase shift in the optical signal passing through the optical waveguide.

A travelling wave electro-optic modulator comprising a substrate; first and second parallel spaced apart electrode strips arranged on the substrate; first and second optical waveguides arranged on the substrate, the optical waveguides being positioned between the first and second electrode strips and extending parallel thereto; the first electrode strip comprising at least one portion extending proximate to the first optical waveguide; the second electrode strip comprising at least one portion extending proximate to the second optical waveguide; a semiconductive backplane layer arranged within the substrate and extending between the waveguides; and, a matched termination connected to the first and second electrode strips, the matched termination comprising (a) a serpentine electrically conductive strip arranged on the substrate and connecting the first and second electrode strips together; and, (b) a semiconductive backplane matching element, the backplane matching element comprising a plurality of semiconductive backplane plates connected together by at least one semiconductive backplane arm, the plates and at least one backplane arm being arranged within the substrate, the plates being arranged proximate to the electrode strips such that each electrode strip is capacitively coupled to at least one backplane plate; the serpentine electrically conductive strip being arranged such that at least a portion of its length is proximate to at least one backplane arm such that the two are electrically coupled together.

In a semiconductor light modulator having a multiple quantum well structure, a light spot size converter element provided in a light input/output section is easily and accurately manufactured. At least one layer of a compound semiconductor layer containing a P element is inserted into a desired position in the multiple quantum well structure containing an Al element. This layer is smaller than a band gap of a compound semiconductor used in a bather layer of the multiple quantum well.

An electro-absorption modulator (EAM) is configured to include an on-chip AC ground plane that is used to terminate the high frequency RF input signal within the chip itself. This on-chip ground termination of the modulation input signal improves the frequency response of the EAM, which is an important feature when the EAM needs to support data rates in excess of 50 Gbd. By virtue of using an on-chip ground for the very high frequency signal content, it is possible to use less expensive off-chip components to address the lower frequency range of the data signal (i.e., for frequencies less than about 1 GHz).

A high-power electro-optic modulator (EOM) is formed to use specialized electrodes of a material selected to have a CTE that matches the CTE of the modulator's crystal. Providing CTE matching reduces the presence of stress-induced birefringence, which is known to cause unwanted modulation of the propagating optical signal. The specialized electrodes are preferably formed of a CuW metal matrix composite having a W/Cu ratio selected to create the matching CTE value. Advantageously, the CuW-based electrodes also exhibit a thermal conductivity about an order of magnitude greater than conventional electrode material (brass, Kovar) and thus provide additional thermal stability to the EOM's performance.

Typically, quantum systems are very sensitive to environmental fluctuations, and diagnosing errors via measurements causes unavoidable perturbations. Here, an in situ frequency-locking technique monitors and corrects frequency variations in single-photon sources based on resonators. By using the classical laser fields used for photon generation as probes to diagnose variations in the resonator frequency, the system applies feedback control to correct photon frequency errors in parallel to the optical quantum computation without disturbing the physical qubit. Our technique can be implemented on a silicon photonic device and with sub 1 pm frequency stabilization in the presence of applied environmental noise, corresponding to a fractional frequency drift of <1% of a photon linewidth. These methods can be used for feedback-controlled quantum state engineering. By distributing a single local oscillator across a one or more chips, our approach enables frequency locking of many single photon sources for large-scale photonic quantum technologies.