The present invention relates inter alia to a color display comprising nanoparticles and color filters.

High bandwidth (e.g., > 100 GHz) modulators and methods of fabricating such are provided. An EAM comprises a waveguide mesa comprising a continuous multi-quantum well (MQW) layer; a plurality of electrode segments disposed on the waveguide mesa; and a microstrip transmission line disposed on an insulating material layer and in electrical communication with the plurality of electrode segments via conducting bridges. The waveguide mesa comprises alternating active sections and passive sections. An electrode segment of the plurality of electrodes is disposed on a respective one of the active sections. Portions of the continuous MQW layer disposed in each of the active sections having an energy gap defining an active energy gap value. Portions of the continuous MQW layer disposed in each of the passive sections having an energy gap defining an passive energy gap value. The active energy gap value is less than the passive energy gap value.

A laminate (22) is formed on a semiconductor substrate (10). Two or more grooves (54) are formed in the laminate (22). A mesa (24) with two grooves among the two or more grooves (54) positioned on both sides is formed. An insulating resin film (30) is embedded into the two or more grooves (54). A first opening (32) is formed at the insulating resin film (30) embedded in one of the two or more grooves (54) and an electrode (46) extracted upward from a bottom surface (36) is formed. A first side surface (34) of the insulating resin film (30) is inclined in a forward tapered direction.

An optical modulator includes a first mesa waveguide extending in a first direction, and a second mesa waveguide. The first mesa waveguide includes a p-type first semiconductor layer disposed over a substrate, a core layer disposed over the first semiconductor layer, a p-type second semiconductor layer disposed over the core layer, and an n-type third semiconductor layer disposed over the core layer. The second semiconductor layer and the third semiconductor layer are arranged adjacent to each other in the first direction. An electrode is disposed over the third semiconductor layer. A joining surface between the second semiconductor layer and the third semiconductor layer is inclined with respect to a surface orthogonal to the first direction.

An optical switch device and a related method for defining a topological light transport channel in a photonic lattice are provided. An exemplary optical switch device includes a photonic lattice including a photonic topological microring array comprising a plurality of site rings coupled via a plurality of anti-resonant link rings, a plurality of input light ports and a plurality of output light ports located at the plurality of site rings, wherein the plurality of input light ports and the plurality of output light ports are respectively connected by a plurality of topological light transport channels. The optical switch device is further configured such that each of the topological light transport channels is defined by a gain domain area that is produced by a corresponding patterned optical pumping beam emitted onto the photonic topological microring array.

Optical modulators are described having a Mach-Zehnder interferometer and a pair of RF electrodes interfaced with the Mach-Zehnder interferometer in which the Mach-Zehnder interferometer comprises optical waveguides formed from semiconductor material. The optical modulator additionally comprises a plurality of phase shifters configured to interface with the plurality of interconnected optical waveguides such that at least one phase shifter of the plurality of phase shifters is interfaced with at least one optical waveguide of the plurality of interconnected optical waveguides. A phase shifter controller, including an energy source with a variable output controlled by the controller and a plurality of electrical connections connecting the energy source to each of the plurality of phase shifters, is also included. In various embodiments, the plurality of electrical connections are configured to provide approximately equal power to each of the phase shifting elements from the energy source.

A semiconductor Mach-Zehnder optical modulator includes input-side lead-out lines, phase modulation electrode lines, and electrodes that apply modulation signals propagating through the phase modulation electrode lines to waveguides, respectively. The semiconductor Mach-Zehnder optical modulator further includes a conductive layer between a substrate and the waveguides, a plurality of first wiring layers connected to the conductive layer, and a second wiring layer that connects an electrode pad and the plurality of first wiring layers.

A cadmium free quantum dot not including cadmium and including: a semiconductor nanocrystal core comprising indium and phosphorous, a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core and comprising zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell and comprising zinc and sulfur, a composition and composite including the same, and an electronic device.

A method for on-silicon integration of a III-V-based material component includes providing a first substrate having a silicon-based optical layer including a waveguide, transferring a second substrate of III-V-based material on the optical layer, and forming the III-V component from the second substrate, so as to enable a coupling between the waveguide and the III-V component, by preserving a III-V-based material layer extending laterally. The method also includes forming by epitaxy from the III-V layer, an InP:Fe-based structure laterally bordering the III-V component, forming a layer including contacts configured to contact the III-V component, and transferring a third silicon-based substrate onto the layer including the contacts.

A photonic chip. In some embodiments, the photonic chip includes a waveguide; and an optically active device comprising a portion of the waveguide. The waveguide may have a first end at a first edge of the photonic chip; and a second end, and the waveguide may have, everywhere between the first end and the second end, a rate of change of curvature having a magnitude not exceeding 2,000/mm.sup.2.