Provided herein are encoded microcarriers for analyte detection in multiplex assays. The microcarriers are encoded with an analog code for identification and include a capture agent for analyte detection. Also provided are methods of making the encoded microcarriers disclosed herein. Further provided are methods and kits for conducting a multiplex assay using the microcarriers described herein.

A resist topcoat composition and a method of forming patterns using the resist topcoat composition. The resist topcoat composition includes an acrylic copolymer including a first structural unit represented by Chemical Formula M-1, and a second structural unit represented by Chemical Formula M-2; an acid compound; and a solvent

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A resist underlayer composition and a method of forming patterns using a resist underlayer composition, the resist underlayer composition including a polymer, the polymer including a structural unit that is a reaction product of an isocyanurate compound, the isocyanurate compound having at least one thiol group thereon, and a solvent.

A method for manufacturing a semiconductor device includes forming a resist layer including a resist composition over a substrate. The resist composition includes: a metal, a ligand, and a solvent. The solvent is mixture of a first solvent having a vapor pressure of at least 0.75 kPa, wherein the first solvent is one or more of an ether, an ester, an alkane, an aldehyde, or a ketone, and a second solvent different from the first solvent. Alternatively, the solvent is a third solvent, wherein the third solvent is a C4-C14 tertiary alcohol. The resist layer is patterned.

A metal circuit structure based on a flexible printed circuit (FPC) contains: a substrate, a first metal layer attached on the substrate, a second metal layer formed on the first metal layer, and an intermediate layer defined between the first metal layer and the second metal layer. A first surface of the intermediate layer is connected with the first metal layer, and a second surface of the intermediate layer is connected with the second metal layer. The intermediate layer is made of a first material, the second metal layer is made of a second material, and the first material of the intermediate layer does not act with the second material of the second metal layer.

In one exemplary embodiment, a method for forming a pattern includes (a) forming, on a substrate, a first pattern having an opening and containing a first material, (b) forming a filling portion in the opening, the filling portion containing a second material different from the first material, and (c) removing the first pattern so that the filling portion remains as a second pattern inverted with respect to the first pattern. At least one of the first material or the second material contains tin.

A photoresist composition including an organometallic compound, and a method for fabricating a semiconductor device using the same are provided. The photoresist composition may include an organometallic compound, a radical sensitizer including a structure of Chemical formula 2-1 or Chemical formula 2-2, and a solvent.

In Chemical formula 2-1,

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A.sup.1 is a substituted or unsubstituted hydrocarbon group having 1 to 20 carbon atoms, and R.sup.1, R.sup.2 and R.sup.3 are each independently hydrogen, a halogen, a substituted or unsubstituted hydrocarbon group having 1 to 20 carbon atoms, or a hetero-functional group.

In Chemical formula 2-2,

##STR00002##

A.sup.2 is a substituted or unsubstituted hydrocarbon group having 1 to 20 carbon atoms, and R.sup.4 and R.sup.5 are each independently hydrogen, a halogen, a substituted or unsubstituted hydrocarbon group having 1 to 20 carbon atoms, or a hetero-functional group.

A shadow mask for patterned vapor deposition of an organic light-emitting diode (OLED) material includes a ceramic membrane under tensile stress with a plurality of through-apertures forming an aperture array through which a vaporized deposition material can pass. A multilayer peripheral support is attached to a rear surface with a hollow portion beneath the aperture array. A compressively-stressed interlayer balances the tensile stress of the ceramic membrane. A shadow mask module with multiple shadow masks is also provided and includes a rigid carrier having plural windows with a shadow mask positioned in each window. To make the module, shadow mask blanks are affixed to each carrier window followed by etching of apertures and support layers. In this way extremely flat masks with precise aperture patterns are formed.

The present invention relates to a hardmask composition including a compound represented by Chemical Formula 1 and a solvent, a hardmask layer including a cured product of the hardmask composition, and a pattern forming method using the hardmask composition.

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In Chemical Formula 1, the definitions of A, R.sup.1 to R.sup.5, and n are as described in the specification.

An optical device is fabricated with a higher resolution of features in a patterned lattice. A photoresist is applied to a device layer for the optical device. Several photomasks offset from one another are used in different exposure steps to expose the photoresist with features. The features in each exposure can have different characteristic dimensions, such as different diameters for posts or holes to be produced in the device layer. Once the exposures are complete, the patterned lattice of the features are produced in the device layer. For example, the photoresist is developed, and reactive ion etching is used to produce the features in the device layer.