A photoresist composition and manufacturing method thereof, a manufacturing method of a metal pattern, and a manufacturing method of an array substrate are provided. The photoresist composition includes a base material and an ion adsorbent, and the ion adsorbent is chelating resin.

The present disclosure relates to novel negative-type photoresist composition and methods of their use. The disclosure further relates to multiple trigger photoresist processes which allow for the improvement in contrast, resolution, and/or line edges roughness in some systems without giving up sensitivity. The photoresist compositions and the methods of the current disclosure are ideal for fine patent processing using, for example, ultraviolet radiation, extreme ultraviolet radiation, beyond extreme ultraviolet radiation, X-rays and changed particle. The disclosure further relates to sensitivity enhancing materials useful in the disclosed compositions and methods.

A photosensitive resin composition comprises: a resin having a phenolic hydroxyl group; a photosensitive acid generator; a compound having at least one selected from the group consisting of an aromatic ring, a heterocycle and an alicycle, and at least one selected from the group consisting of a methylol group and an alkoxyalkyl group; an aliphatic compound having two or more functional groups being at least one selected from the group consisting of an acryloyloxy group, a methacryloyloxy group, a glycidyloxy group, an oxetanyl alkyl ether group, a vinyl ether group and a hydroxyl group; and a compound having at least one skeleton selected from the group consisting of an anthracene skeleton, a phenanthrene skeleton, a pyrene skeleton, a perylene skeleton, a carbazole skeleton, a phenothiazine skeleton, a xanthone skeleton, a thioxanthone skeleton, an acridine skeleton, a phenylpyrazoline skeleton, a distyrylbenzene skeleton and a distyrylpyridine skeleton, or a benzophenone compound.

A photoresist composition and manufacturing method thereof, a manufacturing method of a metal pattern, and a manufacturing method of an array substrate are provided. The photoresist composition includes a base material and an ion adsorbent, and the ion adsorbent is chelating resin.

The present disclosure relates to novel negative-type photoresist composition and methods of their use. The disclosure further relates to multiple trigger photoresist processes which allow for the improvement in contrast, resolution, and/or line edges roughness in some systems without giving up sensitivity. The photoresist compositions and the methods of the current disclosure are ideal for fine patent processing using, for example, ultraviolet radiation, extreme ultraviolet radiation, beyond extreme ultraviolet radiation, X-rays and changed particle. The disclosure further relates to sensitivity enhancing materials useful in the disclosed compositions and methods.

The disclosure provides a photosensitive adhesive composition including 10 parts by weight to 90 parts by weight of a monomer having a vinyl ether functional group, 10 parts by weight to 90 parts by weight of a tertiary amine polymer, and 0.5 parts by weight to 10 parts by weight of a photoacid initiator. The weight-average molecular weight of the tertiary amine polymer is between 2000 and 20000. The disclosure also provides a photosensitive conductive adhesive composition and an electronic device containing the photosensitive conductive adhesive composition.

Diazo-resin-containing photoresist compositions and methods of preparing the same are provided for solving the problem that existing diazo-resins cannot be applied in LCD photoresists because the storage periods of the diazo-resins themselves and the printed boards made thereby are both short due to poor thermal stability of the diazo-resins. The diazo-resins of the present invention have excellent thermal stability and exhibit strong resistance to dry etching when being used in negative photoresists, while high resolution can be achieved. Meanwhile, during exposure, portions of the diazo-resins can crosslink with hydrogen bonds on surface of SiO or SiON film forming a barrier layer or passivation layer, such that the adhesion between the photoresists and the film layer is increased, and the photoresists would not peel during development. Thus, the utilization of tackifiers for enhancing the adhesion between a photoresist and surface of SiO or SiON film before masking can be omitted.

Provided are a photosensitive resin composition using a polyimide precursor composition, a cured film, a method for producing a cured film, a semiconductor device, and a method for producing a polyimide precursor composition.

A polyimide precursor composition in which the molar ratio of repeating units represented by General Formula (1-2) among structural isomers of the polyimide precursor is 60% to 90% by mole; in General Formula (1-2), A.sup.1 and A.sup.2 each independently represent an oxygen atom or NH, R.sup.111 and R.sup.112 each independently represent a single bond or a divalent organic group, and R.sup.113 and R.sup.114 each independently represent a hydrogen atom or a monovalent organic group.

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An object of the present invention is to provide a pattern forming method capable of forming a pattern having excellent limit resolution, and a method for manufacturing an electronic device. The pattern forming method of the present invention is a pattern forming method having a step 1 of forming a metal resist film on a substrate using an actinic ray-sensitive or radiation-sensitive resin composition including a metal compound having at least one bond selected from the group consisting of a metal-carbon bond and a metal-oxygen bond, a step 2 of exposing the metal resist film, and a step 3 of obtaining a pattern by subjecting the exposed metal resist film to a development treatment with a developer including an organic solvent to remove a non-exposed portion, in which the pattern forming method may further have, after the step 3, a step 4 of washing the pattern with a rinsing liquid including an organic solvent, and the developer or the rinsing liquid satisfies predetermined requirements.

The present invention is a resist material containing: a base polymer (P) containing a repeating unit (A) containing a reactive group and represented by the following formula (a1) or (a2), and a repeating unit (B) having an acid-decomposable group; a crosslinking agent having a structure represented by the following formula (1); a thermal acid generator; a photodecomposable quencher represented by the following formula (2); and an organic solvent. This can provide: a resist material having little edge roughness, little size variation, excellent resolution, and excellent heat resistance; and a patterning process.

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