The present invention employs a compound represented by the following formula (1) and/or a resin comprising the compound as a constituent: ##STR00001## wherein R.sup.1 is a 2n-valent group of 1 to 60 carbon atoms or a single bond; R.sup.2 to R.sup.5 are each independently a linear, branched, or cyclic alkyl group of 1 to 10 carbon atoms, an aryl group of 6 to 10 carbon atoms, an alkenyl group of 2 to 10 carbon atoms, an alkoxy group of 1 to 30 carbon atoms, a halogen atom, a thiol group, a hydroxy group, or a group in which a hydrogen atom of a hydroxy group is replaced with an acid dissociation group, provided that at least one selected from R.sup.2 to R.sup.5 is a group in which a hydrogen atom of a hydroxy group is replaced with an acid dissociation group; m.sup.2 and m.sup.3 are each independently an integer of 0 to 8; m.sup.4 and m.sup.5 are each independently an integer of 0 to 9, provided that m.sup.2, m.sup.3, m.sup.4, and m.sup.5 are not 0 at the same time; n is an integer of 1 to 4; and p.sup.2 to p.sup.5 are each independently an integer of 0 to 2.

A black positive-type photosensitive resin composition with high sensitivity is provided. The photosensitive resin composition of the invention includes (A) a binder resin, (B) a quinonediazide adduct of a phenol compound having 3 or more phenolic hydroxyl groups (hereunder also referred to as “trivalent or greater phenol compound”, and (C) a black coloring agent, wherein the quinonediazide adduct (B) includes (b1) a quinonediazide adduct wherein one of the hydroxyl groups of the phenolic hydroxyl groups of the trivalent or greater phenol compound is replaced by a structure represented by formula (I) or formula (II), and (b2) a quinonediazide adduct wherein two of the hydroxyl groups of the phenolic hydroxyl groups of the trivalent or greater phenol compound are replaced by structures represented by formula (I) or formula (II), and the total of (b1) and (b2) is at least 60 mol % of the entirety of (B). R.sup.a to R.sup.d and * in the formulas are as defined in the Specification. ##STR00001##

The present invention provides a resist composition which has sufficient resistant to a plating treatment and is capable of forming a resist pattern with high accuracy. The present invention also provides a method for producing a resist pattern using the resist composition, and a method for producing a plated molded article using the resist pattern. The present invention relates to a resist composition comprising a compound (I) having a quinone diazide sulfonyl group, a resin comprising a structural unit having an acid-labile group (A1), an alkali-soluble resin (A2) and an acid generator (B); a method for producing a resist pattern using the resist composition; and a method for producing a plated molded article using the resist pattern.

The disclosed subject matter relates to resist compositions comprising a phenolic resin component, a photoactive 2,1,5-diazonaphthoquinonesulfonate component (PAC), a solvent component that do not include or require the use of an added photo acid generator (PAG). The PAC is a free PAC, a coupled PAC (PACb) or a combination thereof that includes a substituted or unsubstituted 2,1,5-DNQ material or compound onto which a substituted or unsubstituted 2,1,5-DNQ material is appended that, when UV exposed, do not form sulfonic acid. The phenolic resin component is a Novolak derivative in which some or all of the free hydroxy groups are protected with an acid cleavable acetal moiety which can include a PACb moiety. The disclosed subject matter also relates to the methods of using the present compositions in either in thick for thin film photoresist device manufacturing methodologies.

A manufacturing method for semiconductor device comprises the steps of: forming a ridge on the surface of an InP substrate; applying a photoresist to the surface of the InP substrate so as to cover the ridge; exposing through a mask an area of the photoresist covering part of an electrode contact layer at the top of the ridge, to form a resist pattern by development; applying a shrink material so as to cover resist pattern defects occurred when forming the resist pattern; forming a crosslinked portion in the defects to repair them by reacting the shrink material with an acid remaining at the exposed interface of the resist pattern; and removing by etching an electrode contact layer exposed from the resist pattern having the repaired defects after stripping away an unreacted shrink material, thereby to obtain a desired processed shape.

The present invention provides a resin composition which is highly sensitive and exhibits high chemical resistance even in the case of being baked at a low temperature of 250° C. or less and can suppress the generation of outgas after curing. The present invention is a resin composition which contains (a) an alkali-soluble resin containing polyimide, polybenzoxazole, polyamide-imide, a precursor of any one of these compounds and/or a copolymer of these compounds and (b) an alkali-soluble resin having a monovalent or divalent group represented by the following general formula (1) in a structural unit and in which the modification rate of a phenolic hydroxyl group in the alkali-soluble resin (b) is 5% to 50%. ##STR00001##
(In general formula (1), O represents an oxygen atom. R.sup.1 represents a hydrogen atom or a hydrocarbon group which has 1 to 20 carbon atoms and may be substituted and R.sup.2 represents an alkyl group having 1 to 5 carbon atoms. s and t each independently represent an integer from 0 to 3. Provided that (s+t)≥1. d represents an integer from 0 to 2. u represents an integer from 1 to 2, and * represents a chemical bond.)

An adhesion promoter as shown in Formula (I) and a photosensitive resin composition containing the adhesion promoter are disclosed:

##STR00001## where R.sub.1, R.sub.2 and R.sub.3 each refer to a hydrogen atom, an optionally substituted C.sub.1-C.sub.20 alkyl, an optionally substituted C.sub.2-C.sub.20 alkenyl, an optionally substituted C.sub.2-C.sub.20 alkynyl, an optionally substituted phenyl, or other optionally substituted carbon atom; A refers to an optionally substituted C.sub.1-C.sub.20 alkyl, an optionally substituted C.sub.2-C.sub.20 alkenyl, an optionally substituted C.sub.2-C.sub.20 alkynyl, an optionally substituted phenyl, or other an optionally substituted carbon atom substituents; and the carbon in the alkyl, the alkenyl, the alkynyl, the phenyl, or the carbon atom substituents is optionally substituted with one or more of N, O and S; and X refers to an optionally substituted aromatic heterocyclic group. The adhesion promoter and the photosensitive resin composition can be used for manufacturing a semiconductor integrated circuit (IC), a LED and a flat-panel display.

Embodiments of the present disclosure include a lithography apparatus, patterning system, and method of patterning a layered structure. The patterning system includes an image formation device and a reactive layer. The patterning system allows for creating lithography patterns in a single operation. The lithography apparatus includes the patterning system and an optical system. The lithography apparatus uses a plurality of wavelengths of light, along with the image formation device, to create a plurality of color patterns on the reactive layer. The method of patterning includes exposing the reactive layer to a plurality of wavelengths of light. The light reacts differently with different regions of the reactive layer, depending on the wavelength of light emitted onto the different regions. The method and apparatuses disclosed herein require only one image formation device and one lithography operation.

The present invention relates to resist compositions comprising (A) a polymer component, (B) a photoacid generator component, (C) a photoactive diazonaphthoquinone component, and (D) a solvent. The polymer component comprises a mixture of a Novolak derivative and a polymer comprising hydroxystyrene repeat units. The polymer component comprises repeat units with free phenolic hydroxy moieties and repeat units with phenolic hydroxy moieties protected with an acid cleavable acetal moiety. The positive photoresist composition is suitable for manufacturing electronic devices.

Describe herein is a composition comprising: an acrylic polymer comprising repeat units selected from ones having structure (1), (2), (3), (4), (5), (6), and (7) wherein these repeat units are present in said acrylic polymer in the mole % ranges as described herein; a Novolak resin having a dissolution rate in 0.26 N aqueous TMAH of at least 50 Å/sec; a diazonaphthoquinone (DNQ) photoactive compound (PAC); and an organic spin casting solvent, and a process of using said composition as a positive photoresist developable in aqueous base.