A resist underlayer film composition for use in a multilayer resist method, containing one or more compounds shown by formula (1), and an organic solvent,

WX).sub.n   (1)

W represents an n-valent organic group having 2 to 50 carbon atoms. X represents a monovalent organic group shown by formula (1X). “n” represents an integer of 1 to 10,

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The dotted line represents a bonding arm. R.sup.01 represents an acryloyl or methacryloyl group. Y represents a single bond or a carbonyl group. Z represents a monovalent organic group having 1 to 30 carbon atoms. A resist underlayer film composition can be cured by high energy beam irradiation and form a resist underlayer film having excellent filling and planarizing properties and appropriate etching resistance and optical characteristics in a fine patterning process by a multilayer resist method in the semiconductor apparatus manufacturing process.

Disclosed are a semiconductor photoresist composition and a method of forming patterns using the semiconductor photoresist composition. The semiconductor photoresist composition includes an organometallic compound represented by Chemical Formula 1 and a solvent and a method of forming patterns using the same.

An epoxy compound of formula (1) is provided. A resist composition comprising the epoxy compound is capable of adequately controlling the diffusion length of acid generated from an acid generator without sacrificing sensitivity. ##STR00001##

To provide a photosensitive composition for hologram recording that enables further improvement in diffraction characteristic. A photosensitive composition for hologram recording that includes at least two kinds of photopolymerizable monomers, a photopolymerization initiator, a binder resin, and a polymerization inhibitor. The at least two kinds of photopolymerizable monomers are a monofunctional monomer and a polyfunctional monomer.

To provide a photosensitive composition for hologram recording that enables further improvement in diffraction characteristic. A photosensitive composition for hologram recording that includes at least two kinds of photopolymerizable monomers, a photopolymerization initiator, a binder resin, and a polymerization inhibitor. The at least two kinds of photopolymerizable monomers are a monofunctional monomer and a polyfunctional monomer.

The present teachings relate to compositions for forming a negative-tone photopatternable dielectric material, where the compositions include, among other components, an organic filler and one or more photoactive compounds, and where the presence of the organic filler enables the effective removal of such photoactive compounds (after curing, and during or after the development step) which, if allowed to remain in the photopatterned dielectric material, would lead to deleterious effects on its dielectric properties.

A composition for forming a silicon-containing resist underlayer film contains a compound shown by the following general formula (A-1) and a thermally crosslinkable polysiloxane. R.sub.1 represents a methyl group, an ethyl group, a propyl group, an allyl group, or a propargyl group. R.sub.2 represents a hydrogen atom, an acetyl group, an acryloyl group, a methacryloyl group, a benzoyl group, a naphthoyl group, or an anthranoyl group. R.sub.3 represents a methyl group, an ethyl group, a propyl group, an allyl group, a propargyl group, or a group shown by the following general formula (A-2), where a broken line represents a bonding arm, and R.sub.1 and R.sub.2 are as defined above. An object of the present invention is to provide a silicon-containing resist underlayer film capable of exhibiting high effect of suppressing ultrafine pattern collapse and forming a resist pattern with favorable pattern profile in multilayer resist methods.

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The present invention is a planarizing agent for forming an organic film, including an aromatic-group-containing compound having a molecular weight represented by a molecular formula of 200 to 500, wherein a blended composition that includes the planarizing agent and a preliminary composition containing an organic film-forming resin and a solvent, and having a complex viscosity of 1.0 Pa.Math.s or more in a temperature range of 175° C. or higher has a temperature range in which a complex viscosity of the blended composition is less than 1.0 Pa.Math.s in a temperature range of 175° C. or higher. This provides a planarizing agent for forming an organic film to yield a composition for forming an organic film having a high planarizing ability; a composition for forming an organic film containing this planarizing agent; a method for forming an organic film using this composition; and a patterning process.

The present invention is a planarizing agent for forming an organic film, including an aromatic-group-containing compound having a molecular weight represented by a molecular formula of 200 to 500, wherein a blended composition that includes the planarizing agent and a preliminary composition containing an organic film-forming resin and a solvent, and having a complex viscosity of 1.0 Pa.Math.s or more in a temperature range of 175° C. or higher has a temperature range in which a complex viscosity of the blended composition is less than 1.0 Pa.Math.s in a temperature range of 175° C. or higher. This provides a planarizing agent for forming an organic film to yield a composition for forming an organic film having a high planarizing ability; a composition for forming an organic film containing this planarizing agent; a method for forming an organic film using this composition; and a patterning process.

The disclosure provides recording materials include fluorene derivatized monomers and polymers for use in volume Bragg gratings, including, but not limited to, volume Bragg gratings for holography applications. Several fluorene structures are disclosed: simply substituted fluorenes, cardo-fluorenes, and spiro-fluorenes. Fluorene derivatized polymers in Bragg gratings applications lead to materials with higher refractive index, low birefringence, and high transparency. Fluorene derivatized monomers/polymers can be used in any volume Bragg gratings materials, including two-stage polymer materials where a matrix is cured in a first step, and then the volume Bragg grating is written by way of a second curing step of a monomer.