A chemically amplified positive-type photosensitive resin composition including an acid generator which generates acid upon exposure to an irradiated active ray or radiation, a resin whose solubility in alkali increases under the action of acid, and a nitrogen-containing aromatic heterocyclic compound that is a nitrogen-containing aromatic heterocyclic compound having a specific structure and having a Log S value of −6.00 or less.

The present invention is a composition for forming a silicon-containing metal hard mask, including: (A) a metal oxide nanoparticle; (B) a thermally crosslinkable polysiloxane (Sx) having no aromatic-ring-containing organic group; and (C) a solvent. This provides a composition for forming a silicon-containing metal hard mask that has a high effect of inhibiting collapse of an ultrafine pattern in a multilayer resist method, that can form a resist pattern having excellent LWR, that has more excellent dry etching resistance and wet removability than a conventional silicon-containing underlayer film material, and that has more excellent filling ability than a conventional metal hard mask material.

A layer is formed over a wafer. The layer contains a material that is sensitive to an extreme ultraviolet (EUV) radiation. A first baking process is performed to the layer. The first baking process is performed with a first humidity level that is greater than about 44%. After the first baking process, the layer is exposed to EUV radiation. A second baking process is performed to the layer. The second baking process is performed with a second humidity level that is greater than about 44%. The layer is rinsed with a liquid that contains water before the second baking process or after the second baking process. After the exposing, the layer is developed with a developer solution that contains water.

A layer is formed over a wafer. The layer contains a material that is sensitive to an extreme ultraviolet (EUV) radiation. A first baking process is performed to the layer. The first baking process is performed with a first humidity level that is greater than about 44%. After the first baking process, the layer is exposed to EUV radiation. A second baking process is performed to the layer. The second baking process is performed with a second humidity level that is greater than about 44%. The layer is rinsed with a liquid that contains water before the second baking process or after the second baking process. After the exposing, the layer is developed with a developer solution that contains water.

A chemically amplified positive-type photosensitive resin composition including an acid generator which generates acid upon exposure to an irradiated active ray or radiation, a resin whose solubility in alkali increases under the action of acid, and a nitrogen-containing aromatic heterocyclic compound that is a nitrogen-containing aromatic heterocyclic compound having a specific structure and having a Log S value of 6.00 or less.

A precursor article has a substrate and a photosensitive thin film or photosensitive thin film pattern on one or both supporting sides. A non-hydroxylic-solvent soluble silver complex is present that is represented by the following formula (I):
(Ag.sup.+).sub.a(L).sub.b(P).sub.c (I)
wherein L represents an -oxy carboxylate; P represents a primary alkylamine; a is 1 or 2; b is 1 or 2; and c is 1, 2, 3, or 4, provided that when a is 1, b is 1, and when a is 2, b is 2. A photosensitizer can also be present to enhance photosensitivity for conversion of reducible silver ions to electrically-conductive silver metal in a resulting product article or device. The electrically-conductive silver metal can be provided as a uniform electrically-conductive silver metal-containing thin film or layer, or as one or more electrically-conductive silver metal-containing thin film patterns.

A photosensitive reducible silver ion-containing composition can be used to provide electrically-conductive silver metal in thin film or patterns on a substrate after irradiation with UV-visible light. The composition comprises: a) a non-hydroxylic-solvent soluble silver complex represented by the following formula (I): ##STR00001##
wherein L represents an -oxy carboxylate; P represents a primary alkylamine; a is 1 or 2; b is 1 or 2; and c is 1, 2, 3, or 4, provided that when a is b, b is 1, and when a is 2, b is 2; b) optionally, a photosensitizer that can either reduce the reducible silver ion or oxidize the -oxy carboxylate; and c) a solvent medium comprising at least one non-hydroxylic solvent.

A developing treatment method supplies a developing solution onto a substrate to develop a resist film on the substrate with a predetermined pattern exposed thereon. The method supplies pure water to a central portion of the substrate to form a puddle of the pure water, and then moves a nozzle in a radial direction passing through a center of the substrate while supplying a developing solution to the puddle of the pure water from the nozzle with a wetted surface of the nozzle in contact with the puddle of the pure water, to form a puddle of a diluted developing solution on the substrate. The method then rotates the substrate to diffuse the puddle of the diluted developing solution over an entire surface of the substrate; and then supplies a developing solution to the substrate to develop the substrate.

A photo-sensitive layer is applied over a wafer. The photo-sensitive layer is exposed. In some embodiments, the photo-sensitive layer is exposed to EUV light. The photo-sensitive layer is baked. The photo-sensitive layer is developed. Humidity is introduced in at least one of: the applying, the baking, or the developing.

A photo-sensitive layer is applied over a wafer. The photo-sensitive layer is exposed. In some embodiments, the photo-sensitive layer is exposed to EUV light. The photo-sensitive layer is baked. The photo-sensitive layer is developed. Humidity is introduced in at least one of: the applying, the baking, or the developing.