A temperature controlling apparatus includes a platen, a first and a second conduits, and a first and a second outlet thermal sensors. The first conduit includes a first inlet, a first outlet, and a first heater. A first fluid enters the first inlet and exits the first outlet, the first heater heats the first fluid to a first heating temperature, and the first fluid is dispensed on the platen. The second conduit includes a second inlet, a second outlet, and a second heater. A second fluid enters the second inlet and exits the second outlet, the second heater heats the second fluid to a second heating temperature, and the second fluid is dispensed on the platen. The first and the second outlet thermal sensors are respectively disposed at the first and the second outlets to sense temperatures of the first and the second fluid.

A temperature controlling apparatus includes a platen, a first and a second conduits, and a first and a second outlet thermal sensors. The first conduit includes a first inlet, a first outlet, and a first heater. A first fluid enters the first inlet and exits the first outlet, the first heater heats the first fluid to a first heating temperature, and the first fluid is dispensed on the platen. The second conduit includes a second inlet, a second outlet, and a second heater. A second fluid enters the second inlet and exits the second outlet, the second heater heats the second fluid to a second heating temperature, and the second fluid is dispensed on the platen. The first and the second outlet thermal sensors are respectively disposed at the first and the second outlets to sense temperatures of the first and the second fluid.

A manufacturing method for a cured substance includes a film forming step of applying a specific photosensitive resin composition onto a base material to form a film, an exposure step of selectively exposing the film, a development step of developing the exposed film with a developer to form a pattern, a treatment step of bringing a treatment liquid into contact with the pattern, and a heating step of heating the pattern after the treatment step, in which at least one of the developer or the treatment liquid contains at least one compound selected from the group consisting of a base and a base generator.

A method of manufacturing a semiconductor device includes forming a first resist layer over a substrate, and forming a second resist layer over the first resist layer. The second resist layer is patterned to expose a portion of the first resist layer to form a second resist layer pattern. The first resist layer is exposed to extreme ultraviolet (XUV) radiation diffracted by the second resist layer pattern. Portions of the first resist layer exposed to the XUV radiation diffracted by the second resist layer are removed.

A method for making at least one structure having sidewalls with different inclinations includes providing a stack including a substrate having a layer of a positive resin whose tone could be reversed when exposed to an insolation dose D<Dinversion, the patterns exposed to the dose Dinversion not being sensitive to creeping at the glass-transition temperature Tfluage of the resin; forming a non-sensitive first pattern by exposing the resin to a first dose D1≥Dinversion, the first pattern having a first sidewall having a first inclination; and forming a creep-sensitive second pattern by exposing the resin to a second dose D2<Dinversion. Creeping is performed by applying a temperature T≥Tfluage to make the second pattern creep over a portion of the first pattern by leaving uncovered at least partially the first sidewall of the first pattern, and defining at least one second sidewall having a second inclination different from the first inclination.

A method for making at least one structure having sidewalls with different inclinations includes providing a stack including a substrate having a layer of a positive resin whose tone could be reversed when exposed to an insolation dose D<Dinversion, the patterns exposed to the dose Dinversion not being sensitive to creeping at the glass-transition temperature Tfluage of the resin; forming a non-sensitive first pattern by exposing the resin to a first dose D1≥Dinversion, the first pattern having a first sidewall having a first inclination; and forming a creep-sensitive second pattern by exposing the resin to a second dose D2<Dinversion. Creeping is performed by applying a temperature T≥Tfluage to make the second pattern creep over a portion of the first pattern by leaving uncovered at least partially the first sidewall of the first pattern, and defining at least one second sidewall having a second inclination different from the first inclination.

Techniques for low- or zero-misaligned vias are disclosed. In one embodiment, a high-photosensitivity and low-photosensitivity photoresist are applied to a substrate and exposed at the same time with use of a dual-tone mask. After being developed, one photoresist forms an overhang over a sheltered region. The mold formed by the photoresists is filled with copper and then etched. The overhang prevents the top of the copper infill below the overhang region from being etched. As such, the sheltered region forms a pillar or column after etching, which can be used as a via. Other embodiments are disclosed.

A method includes providing a first multilayer structure including a substrate, a thin film, and a first photoresist layer; providing a second multilayer structure including a mold having a microstructure pattern, and a second photoresist layer; combining the first multilayer structure and the second multilayer structure so that the first photoresist layer is in contact with the second photoresist layer; and applying pressure and temperature. An article including a microstructure pattern is also disclosed.

Embodiments of the present disclosure include a lithography apparatus, patterning system, and method of patterning a layered structure. The patterning system includes an image formation device and a reactive layer. The patterning system allows for creating lithography patterns in a single operation. The lithography apparatus includes the patterning system and an optical system. The lithography apparatus uses a plurality of wavelengths of light, along with the image formation device, to create a plurality of color patterns on the reactive layer. The method of patterning includes exposing the reactive layer to a plurality of wavelengths of light. The light reacts differently with different regions of the reactive layer, depending on the wavelength of light emitted onto the different regions. The method and apparatuses disclosed herein require only one image formation device and one lithography operation.

The present invention is a material for forming an adhesive film formed between a silicon-containing middle layer film and a resist upper layer film, the material for forming an adhesive film containing: (A) a resin having a structural unit shown by the following general formula (1); (B) a crosslinking agent containing one or more compounds shown by the following general formula (2); (C) a photo-acid generator; and (D) an organic solvent. This provides: a material for forming an adhesive film in a fine patterning process by a multilayer resist method in a semiconductor device manufacturing process, where the material gives an adhesive film that has high adhesiveness to a resist upper layer film, has an effect of suppressing fine pattern collapse, and that also makes it possible to form an excellent pattern profile; a patterning process using the material; and a method for forming the adhesive film.

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