The inventive concept provides an edge exposure apparatus for performing an edge exposing process by irradiating a light at an edge region of a substrate. The edge exposure apparatus includes a support unit configured to support the substrate; a light irradiation unit having a light source for irradiating the light on the substrate; and a control unit configured to control an output of the light source, and wherein the control unit comprises: a measurement unit configured to measure illuminance values according to the outputs of the light source; and an output control unit configured to set a reference illuminance value among the measured illuminance values by the measurement unit and to control the output of the light source based on the set reference illuminance value.

In a method of coating a photoresist, the photoresist may be provided to an upper surface of a rotating wafer. A hovering solution may be injected to an edge portion of the photoresist under a condition that the hovering solution may be hovered with respect to the edge portion of the photoresist with an air layer being interposed between the hovering solution and the edge portion of the photoresist to limit and/or prevent a bead of the photoresist from being formed on an edge portion of the upper surface of the wafer. Thus, the photoresist having a uniform thickness may be coated on the upper surface of the wafer to improve a yield of a semiconductor device by increasing an effective area of the edge portion of the wafer.

In a method executed in an exposure apparatus, a focus control effective region and a focus control exclusion region are set based on an exposure map and a chip area layout within an exposure area. Focus-leveling data are measured over a wafer. A photo resist layer on the wafer is exposed with an exposure light. When a chip area of a plurality of chip areas of the exposure area is located within an effective region of a wafer, the chip area is included in the focus control effective region, and when a part of or all of a chip area of the plurality of chip areas is located on or outside a periphery of the effective region of the wafer, the chip area is included in the focus control exclusion region In the exposing, a focus-leveling is controlled by using the focus-leveling data measured at the focus control effective region.

Disclosed in this invention is a wafer processing apparatus and method for pre-alignment and edge exposure of a wafer. The wafer processing apparatus includes a pre-alignment module, an edge exposure module, a motion module, a control module and a rotary table. The motion module includes a rotation module, a lifting module and a translation module, which are disposed and interconnected above one another. The rotation module is connected at the top to the rotary table and is configured to drive the rotary table to rotate together with the wafer. The lifting module is configured to drive the rotation module and the rotary table to move vertically. The translation module is configured to drive the lifting module and the rotation module to move horizontally. The pre-alignment module and the edge exposure module are positioned in correspondence to opposing sides of the wafer. The invention reduces the number of objects to be controlled as well as the complexity in control and system structure. Additionally, it simplifies the pre-alignment operation and reduces equipment cost.

An exposure apparatus exposes a peripheral portion of a substrate to light, and includes an optical system configured to irradiate the substrate with the light, a stage configured to hold the substrate and be moved in a direction to position the substrate in a direction perpendicular to the optical axis of the optical system, and a controller configured to cause the stage to be moved. The controller moves the stage based on information about a distance between the optical system and the peripheral portion in a direction parallel to the optical axis and a telecentricity of the optical system so that a predetermined portion of the substrate is irradiated with the light from the optical system.

An edge exposure apparatus includes: an imaging unit that images a front surface of a substrate; a substrate holding unit; an exposure unit that exposes an edge portion of the substrate held on the substrate holding unit; a first moving mechanism that moves and rotates the substrate holding unit; a second moving mechanism that moves the exposure unit; and a control unit that controls the first moving mechanism and the second moving mechanism, wherein the first moving mechanism and the second moving mechanism are controlled so as to acquire array information of shots of a pattern on the substrate from a substrate image of a substrate, which has already been subjected to pattern exposure, imaged by the imaging unit, and expose the edge portion of the substrate, based on the acquired array information.

A processing method in one embodiment includes: a step that takes an image of the end face of a reference substrate, whose warp amount is known, over the whole periphery thereof using a camera to obtain shape data of the end face of the reference substrate over the whole periphery of the reference substrate; a step that takes an image of the end face of a substrate over the whole periphery thereof using a camera to obtain shape data of the end face of the substrate over the whole periphery of the substrate; a step that calculates warp amount of the substrate based on the obtained shape data; a step that forms a resist film on a surface of the substrate; a step that determines the supply position from which an organic solvent is to be supplied to a peripheral portion of the resist film and dissolves the peripheral portion by the solvent supplied from the supply position to remove the same from the substrate.

A photolithography method, a method of preparing a flexible substrate and a photoresist drying device are provided. The photolithography method includes: providing a base substrate on which a material layer to be etched is formed, in which the base substrate includes an intermediate region and a peripheral region surrounding the intermediate region; coating a layer of photoresist on the base substrate, in which the photoresist is coated in the intermediate region and the peripheral region, and is formed to cover the material layer to be etched; and drying the photoresist and simultaneously performing a first exposure process on the photoresist coated in the peripheral region.

In a method of coating a photoresist, the photoresist may be provided to an upper surface of a rotating wafer. A hovering solution may be injected to an edge portion of the photoresist under a condition that the hovering solution may be hovered with respect to the edge portion of the photoresist with an air layer being interposed between the hovering solution and the edge portion of the photoresist to limit and/or prevent a bead of the photoresist from being formed on an edge portion of the upper surface of the wafer. Thus, the photoresist having a uniform thickness may be coated on the upper surface of the wafer to improve a yield of a semiconductor device by increasing an effective area of the edge portion of the wafer.

A processing method in one embodiment includes: a step that takes an image of the end face of a reference substrate, whose warp amount is known, over the whole periphery thereof using a camera to obtain shape data of the end face of the reference substrate; a step that takes an image of the end face of a substrate over the whole periphery thereof using a camera to obtain shape data of the end face of the substrate; a step that calculates warp amount of the substrate based on the obtained shape data; a step that forms a resist film on a surface of the substrate; a step that determines the supply position from which an organic solvent is to be supplied to a peripheral portion of the resist film and dissolves the peripheral portion by the solvent supplied from the supply position to remove the same from the substrate.