Enhancing target features of a pattern imaged onto a substrate. This may include adding one or more assist features to a patterning device pattern in one or more locations adjacent to one or more target features in the patterning device pattern. The one or more assist features are added based on two or more different focus positions in the substrate. This can also include shifting the patterning device pattern and/or a design layout based on the two or more different focus positions and the one or more added assist features. This may be useful for improving across slit asymmetry. Adding the one or more assist features to the pattern and shifting the pattern and/or the design layout enhances the target features by reducing a shift caused by across slit asymmetry for a slit of a multifocal lithographic imaging apparatus. This may reduce the shift across an entire imaging field.

An exposure apparatus that exposes a substrate to light by using an original in which a pattern is formed includes an illumination optical system arranged to guide illumination light to the original, the illumination light including first illumination light with a first wavelength and second illumination light with a second wavelength different from the first wavelength, and a projection optical system arranged to form a pattern image of the original by using the illumination light at a plurality of positions in an optical axis direction. The illumination optical system is configured to adjust a position deviation in a direction perpendicular to the optical axis direction between a pattern image formed by the first illumination light and a pattern image formed by the second illumination light by changing an incident angle of the illumination light entering the original.

The present disclosure, in some embodiments, relates to a photolithography tool. The photolithography tool includes a source configured to generate electromagnetic radiation. A dynamic focal system is configured to provide the electromagnetic radiation to a plurality of different vertical positions over a substrate stage. The plurality of different vertical positions include a first position having a first depth of focus and a second position having a second depth of focus that is below the first depth of focus and that vertically overlaps the first depth of focus.

An exposure apparatus, which is configured to expose a substrate to light using an original in which a pattern is formed, includes an illumination optical system configured to guide exposure light to the original, the exposure light including first exposure light with a first wavelength and second exposure light with a second wavelength that is different from the first wavelength, an optical projection system that exhibits on-axis chromatic aberration and that is configured to form a pattern image of the original at a plurality of positions in an optical axis direction of the optical projection system using the exposure light, and a control unit configured to expose the substrate to light while scanning the substrate in a state where a normal direction of a surface of the substrate is inclined with respect to the optical axis direction of the optical projection system.

A laser processing method of performing laser processing on a transparent material that is transparent to ultraviolet light by using a laser processing system includes: performing relative positioning of a transfer position of a transfer image and the transparent material in an optical axis direction of a pulse laser beam so that the transfer position is set at a position inside the transparent material at a predetermined depth ΔZsf from a surface of the transparent material in the optical axis direction; and irradiating the transparent material with the pulse laser beam having a pulse width of 1 ns to 100 ns inclusive and a beam diameter of 10 μm to 150 μm inclusive at the transfer position.

The present disclosure, in some embodiments, relates to a method of developing a photosensitive material. The method includes forming a photosensitive material over a substrate. The photosensitive material is exposed to electromagnetic radiation focused at a plurality of different heights over the substrate. The plurality of different heights are vertically separated from one another and are disposed within the photosensitive material along a vertical path that extends in a direction perpendicular to an upper surface of the photosensitive material. The photosensitive material is developed to remove a soluble region.

A laser processing method of performing laser processing on a transparent material that is transparent to ultraviolet light by using a laser processing system includes: performing relative positioning of a transfer position of a transfer image and the transparent material in an optical axis direction of a pulse laser beam so that the transfer position is set at a position inside the transparent material at a predetermined depth ΔZsf from a surface of the transparent material in the optical axis direction; and irradiating the transparent material with the pulse laser beam having a pulse width of 1 ns to 100 ns inclusive and a beam diameter of 10 μm to 150 μm inclusive at the transfer position.

A laser processing method of performing laser processing on a transparent material that is transparent to ultraviolet light by using a laser processing system includes: performing relative positioning of a transfer position of a transfer image and the transparent material in an optical axis direction of a pulse laser beam so that the transfer position is set at a position inside the transparent material at a predetermined depth ΔZsf from a surface of the transparent material in the optical axis direction; and irradiating the transparent material with the pulse laser beam having a pulse width of 1 ns to 100 ns inclusive and a beam diameter of 10 μm to 150 μm inclusive at the transfer position.

Systems, methods, and computer programs for increasing a depth of focus for a lithography system are disclosed. In one aspect, a method includes providing an optical spectrum, a mask pattern, and a pupil design, that together are configured to provide the lithography system with a depth of focus. The method also includes iteratively varying the optical spectrum and an assist feature in the mask pattern to provide a modified optical spectrum and a modified mask pattern that increases the depth of focus. The method further includes configuring a component of the lithography system based on the modified optical spectrum and the modified mask pattern that increases the depth of focus.

An exposure apparatus includes an illumination optical system for illuminating an original including a periodic pattern, a projection optical system for forming an image of the original on a substrate, a controller configured to cause light from the illumination optical system to be obliquely incident on the original such that a light intensity distribution which is line-symmetric with respect to a line, passing through an origin of a pupil region of the projection optical system and orthogonal to a periodic direction of the periodic pattern, is formed in the pupil region by diffracted light beams including diffracted light of not lower than 2nd-order from the periodic pattern, and to control exposure of the substrate such that each point in a shot region of the substrate is exposed in not less than two focus states.