An assembly for collimating broadband radiation, the assembly including: a convex refractive singlet lens having a first spherical surface for coupling the broadband radiation into the lens and a second spherical surface for coupling the broadband radiation out of the lens, wherein the first and second spherical surfaces have a common center; and a mount for holding the convex refractive singlet lens at a plurality of contact points having a centroid coinciding with the common center.

An assembly for collimating broadband radiation, the assembly including: a convex refractive singlet lens having a first spherical surface for coupling the broadband radiation into the lens and a second spherical surface for coupling the broadband radiation out of the lens, wherein the first and second spherical surfaces have a common center; and a mount for holding the convex refractive singlet lens at a plurality of contact points having a centroid coinciding with the common center.

An illumination system includes a plurality of pixels (or spots) that are (or may be) configured in one or more polarization configuration types. The pixels of the illumination system may be configured to promote particular types of polarization (e.g., transverse electric (TE) polarization, transvers magnetic (TM) polarization) to increase pattern contrast while achieving suitable exposure operation throughput. Moreover, the pixels of the pixels of the illumination system may be configured to achieve free-form (arbitrary or freely-configurable) polarization, which permits the polarization of radiation to be tailored to particular exposure operation patterns and other parameters.

An illumination system for an EUV projection lithographic projection exposure apparatus comprises an EUV light source, which generates an output beam of EUV illumination light with a predetermined polarization state. An illumination optical unit guides the output beam along an optical axis, as a result of which an illumination field in a reticle plane is illuminated by the output beam. The light source comprises an electron beam supply device, an EUV generating device and a polarization setting device. The EUV generating device is supplied with an electron beam by the electron beam supply device. The polarization setting device exerts an adjustable deflecting effect on the electron beam for setting the polarization of the output beam. This results in an illumination system, which operates on the basis of an electron beam-based EUV light source and provides an output beam, which is improved for a resolution-optimized illumination.

An illumination optical apparatus illuminates a pattern on a mask with illumination light. The illumination optical apparatus includes an optical integrator arranged in an optical path of the illumination light, and a polarization member made of optical material with optical rotatory power, which is arranged in the optical path on an incidence side of the optical integrator, and which changes a polarization state of the illumination light. The illumination light from the polarization member is irradiated onto the pattern through a pupil plane of the illumination optical apparatus.

The invention relates to a method for compensating at least one defect of an optical system which includes introducing an arrangement of local persistent modifications in at least one optical element of the optical system, which does not have pattern elements on one of its optical surfaces, so that the at least one defect is at least partially compensated.

A method of reducing image placement errors in a microlithographic projection exposure apparatus includes providing a mask, a light sensitive layer and a microlithographic projection exposure apparatus which images features of the mask onto the light sensitive surface using projection light. Subsequently, image placement errors associated with an image of the features formed on the light sensitive surface are determined either by simulation or metrologically. Then an input state of polarization of the projection light is changed to an elliptical output state of polarization which is selected such that the image placement errors are reduced.

Measurement targets for use on substrates, and overlay targets are presented. The targets include an array of first regions alternating with second regions, wherein the first regions include structures oriented in a first direction and the second regions include structures oriented in a direction different from the first direction. The effective refractive index of the two sets of regions are thereby different when experienced by a polarized beam, which will act as a TM-polarized beam when reflected from the first set of regions, but as a TE-polarized beam when reflected from the second set of regions.

An illumination optical unit for projection lithography serves for illuminating an object field, in which an object to be imaged can be arranged, with illumination light. The illumination optical unit has a field facet mirror having a plurality of field facets. Furthermore, the illumination optical unit has a pupil facet mirror having a plurality of pupil facets. The field facets are imaged into the object field by a transfer optical unit. The illumination optical unit additionally has a deflection facet mirror having a plurality of deflection facets, which is arranged in the illumination beam path between the field facet mirror and the pupil facet mirror. This results in an illumination optical unit in which the illumination of the object to be imaged can be configured flexibly and can be adapted well to predefined values.

An absorptive grid polarization element includes a transparent substrate, and a stripe-like grid provided on the transparent substrate. Each of a plurality of linear parts which form the grid absorbs more s polarization light than p polarization light, and thus achieves a polarizing action. The transparent substrate is made of quartz glass. Each of the linear parts includes a second layer formed on the transparent substrate, and a first layer formed on the second layer. The first layers are formed from amorphous titanium oxide. The second layers are formed from amorphous silicon.