A method of using a dual stage lithographic apparatus, wherein the lithographic apparatus includes: two substrate supports each arranged to move and support a substrate, a measure field in which selectively one of the two substrate supports is positioned to measure a feature of the substrate supported by the respective one of the two substrate supports, and an expose field in which selectively one of the two substrate supports is positioned to expose the substrate supported by the respective one of the two substrate supports to a patterned beam of radiation, the method including thermal relaxation of a substrate loaded on one of the two substrate supports, wherein the thermal relaxation is at least partially performed at the expose field and/or in transfer between the measure field and the expose field.

An illustrative device disclosed herein includes a plate and a reticle pod receiving structure on the front surface of the plate that at least partially bounds a reticle pod receiving area on the front surface. In this example, the back surface of the plate has a pin engagement structure that is adapted to engage a plurality of pins and a fluid flow channel that is adapted to allow fluid communication with an interior region of a reticle pod when the reticle pod is positioned in the reticle pod receiving area.

Systems, apparatuses, and methods are provided for manufacturing an electrostatic clamp. An example method can include forming, during a first duration of time comprising a first time, a top clamp comprising a first set of electrodes and a plurality of burls. The method can further include forming, during a second duration of time comprising a second time that overlaps the first time, a core comprising a plurality of fluid channels configured to carry a thermally conditioned fluid. The method can further include forming, during a third duration of time comprising a third time that overlaps the first time and the second time, a bottom clamp comprising a second set of electrodes. In some aspects, the example method can include manufacturing the electrostatic clamp without an anodic bond.

Embodiments of the present disclosure provide a device for adjusting a wafer, a reaction chamber, and a method for adjusting a wafer. The device for adjusting a wafer includes: a lifting module, the lifting module including a first carrier surface configured to carry a wafer, and the first carrier surface ascending to a preset highest position or descending to a preset lowest position relative to a reference surface; a carrier module, the carrier module including a second carrier surface, a position of the second carrier surface being higher than the preset lowest position and being lower than the preset highest position, and the second carrier surface being configured to receive and carry the wafer carried on the first carrier surface; and a suction module, the suction module including a first suction opening facing the wafer and surrounded by the second carrier surface.

A lithography system includes a radiation source configured to generate a radiation, a reticle configured to redirect the radiation, a first type injection nozzle proximal to the reticle and configured to generate a first particle shield in a propagation path of the radiation, and a second type injection nozzle proximal to the radiation source and configured to generate a second particle shield in the propagation path of the radiation. The second type injection nozzle and the first type injection nozzle are of different types.

A method of processing a substrate, includes emitting light including vacuum ultraviolet light to a front surface of the substrate, which has a resist film formed thereon from a resist material for EUV lithography, before an exposure process in an interior of a processing container.

Particulate deposition rate on a photolithographic mask, particularly of tin (Sn) particles produced within an EUV light source, is reduced by producing turbulence within a radiation source chamber of the EUV light source. Turbulence can be produced by changing the temperature, pressure, and/or gas flow rate within the radiation source chamber. The turbulence reduces the number of particles exiting the EUV light source which could be deposited on the photomask.

A system and method for dynamically controlling a temperature of a thermostatic reticle. A thermostatic reticle assembly that includes a reticle, temperature sensors located in proximity to the reticle, and one or more heating elements. A thermostat component that is in communication with the temperature sensors and the heating element monitors the current temperature of the reticle relative to a steady-state temperature. In response to the current temperature of the reticle being lower than the steady-state temperature, the heating elements are activated to preheat the reticle to the steady-state temperature.

An extreme ultraviolet (EUV) source includes a collector associated with the vessel. The extreme ultraviolet (EUV) source includes a plurality of vanes along walls of the vessel. Each vane includes a stacked vane segment, and the stacked vane segments for each vane are stacked in a direction of drainage of tin (Sn) in the vessel. The EUV source includes a thermal control system comprising a plurality of independently controllable heating elements, where a heating element is configured to provide localized control for heating of a vane segment of the stacked vane segments.

An optical element and a lithographic apparatus including the optical element. The optical element includes a first member having a curved optical surface and a heat transfer surface, and a second member that comprises at least one recess, the at least one recess sealed against the heat transfer surface to form at least one closed channel between the first member and the second member to allow fluid to flow therethrough for thermal conditioning of the curved optical surface. In an embodiment, one or more regions of the heat transfer surface exposed to the at least one closed channel are positioned along a curved profile similar to that of the curved optical surface.