A storage apparatus for storing an object includes a load port unit that a receptacle is loaded onto or unloaded from, in which the receptacle accommodates the object in a storage space formed by a body and a cover that covers the body, and a controller. The load port unit includes a housing having an interior space, a stage member that is provided on the housing and that opens the storage space by moving the body, the receptacle being seated on the stage member, and an exhaust tube that evacuates a spacing space between the body and the cover spaced apart from each other. One end of the exhaust tube faces toward the spacing space, and an opposite end of the exhaust tube faces toward the interior space.

A light source apparatus includes a chamber and a metal fluoride trap coupled to the chamber and configured to provide clean gas to a set of window housing apparatuses coupled to the chamber. Each window housing apparatus is configured to reduce metal fluoride dusting on an optical window and includes a window housing supporting an optical window, an aperture apparatus coupled to the window housing, and an insert disposed between the aperture apparatus and the optical window. The aperture apparatus includes a plurality of cells configured to trap metal fluoride dust flowing upstream from the chamber through the aperture apparatus toward the optical window. The insert is configured to control a first flow rate of the clean gas along the optical window and a second flow

A method for drying a component interior of a component can be used in a lithographic process chain. The method includes a first drying step, in which simultaneously heated air is admitted into a component interior through an inlet, and the heated air is sucked out of the component interior through an outlet. The method also includes a succeeding second drying step, in which the inlet for the heated air is closed and the air is sucked out of the component interior, resulting in a reduced pressure is generated in the component interior.

An apparatus comprising: a position monitoring system configured to determine the position of the substrate with respect to a projection system configured to project a radiation beam through an opening in the projection system and onto a substrate, wherein a component of the position monitoring system is located beneath the projection system in use; and a baffle disposed between the opening and the component.

A lithography system includes a radiation source configured to generate a radiation, a reticle configured to redirect the radiation, a first type injection nozzle proximal to the reticle and configured to generate a first particle shield in a propagation path of the radiation, and a second type injection nozzle proximal to the radiation source and configured to generate a second particle shield in the propagation path of the radiation. The second type injection nozzle and the first type injection nozzle are of different types.

A laser source includes a laser chamber configured to generate a first laser beam. The laser source further includes an optical system coupled to the laser chamber and configured to receive the first laser beam and output an output laser beam. The laser source also includes a gas purge system. According to some aspects, the gas purge system is configured to supply a nitrogen gas into the optical system at a pressure less than atmospheric pressure. According to some aspects, the gas purge system is configured to supply a helium gas into the optical system.

An apparatus for reducing hydrogen permeation of a mask is provided when generating extreme ultraviolet (EUV) radiation. The apparatus includes a mask stage configured to hold the mask, a hydrogen dispensing nozzle configured to eject hydrogen below the mask, and a trajectory correcting assembly. The trajectory correcting assembly includes a correcting nozzle and a gas flow detector. The correcting nozzle is configured to dispense at least one flow adjusting gas to adjust a trajectory of the hydrogen away from the mask to reduce hydrogen permeation at an edge of the mask. The gas flow detector is configured to measure a variation of an airflow of the hydrogen adjusted by the at least one flow adjusting gas.

A plurality of hydrogen outlets are arrayed along a direction normal to a surface (such as a surface of a collector) of an extreme ultraviolet lithography (EUV) tool to increase a volume of hydrogen gas surrounding the surface. As a result, airborne tin is more likely to be stopped by the hydrogen gas surrounding the surface and less likely to bind to the surface. Fewer tin deposits results in increased lifetime for the surface, which reduces downtime for the EUV tool. Additionally, a control device may receive (e.g., from a camera and/or another type of sensor) an indication of levels of tin contamination on the surface and control flow rates to adjust a thickness of the hydrogen curtain. As a result, tin contamination on the collector is less likely to occur and will be more efficiently cleaned by the hydrogen gas, which results in increased lifetime for the surface and reduced downtime for the EUV tool.

Extreme ultraviolet (EUV) lithography systems are provided. A EUV scanner is configured to perform a lithography exposure process in response to EUV radiation. A light source is configured to provide the EUV radiation to the EUV scanner. A measuring device is configured to measure concentration of debris caused by unstable target droplets in the chamber. A controller is configured to adjust a first gas flow rate and a second gas flow rate in response to the measured concentration of the debris and a control signal from the EUV scanner. A exhaust device is configured to extract the debris out of the chamber according to the first gas flow rate. A gas supply device is configured to provide a gas into the chamber according to the second gas flow rate. The control signal indicates the lithography exposure process is completed.

A radiation source for an EUV lithography apparatus is disclosed. The radiation source comprises a chamber comprising a plasma formation region, a radiation collector arranged in the chamber and configured to collect radiation emitted at the plasma formation region and to direct the collected radiation towards an intermediate focus region, and a radiation conduit disposed between the radiation collector and the intermediate focus region. The radiation conduit comprises at least one outlet on an inner surface of a wall of the radiation conduit for directing a protective gas flow, and at least one guide portion extending from the inner surface of the wall of the radiation conduit and configured to redirect the protective gas flow. Also disclosed is a method of reducing debris and/or vapor deposition in the radiation conduit by providing a protective gas flow to the at least one outlet of the radiation conduit.