A temperature sensor arrangement (10), including a bandgap voltage generator (12), which is configured to provide an output voltage (V.sub.bg); at least one semiconductor junction (14) for temperature sensing, which is biased by a biasing current flowing through said semiconductor junction (14); and at least one poly-resistor (R.sub.b3) which is connected between the output (23) of the bandgap voltage generator (12) and the semiconductor junction (14), thereby providing said biasing current from the bandgap voltage generator (12) to the semiconductor junction (14).

A temperature sensor arrangement (10), including a bandgap voltage generator (12), which is configured to provide an output voltage (V.sub.bg); at least one semiconductor junction (14) for temperature sensing, which is biased by a biasing current flowing through said semiconductor junction (14); and at least one poly-resistor (R.sub.b3) which is connected between the output (23) of the bandgap voltage generator (12) and the semiconductor junction (14), thereby providing said biasing current from the bandgap voltage generator (12) to the semiconductor junction (14).

Dual gate FD-SOI transistors are used as MOSFET capacitors to replace passive well capacitors in analog microcircuits. Use of the dual gate FD-SOI devices helps to reduce unstable oscillations and improve circuit performance. A thick buried oxide layer within the substrate of an FD-SOI transistor forms a capacitive dielectric that can sustain high operating voltages in the range of 1.2 V-3.3 V, above the transistor threshold voltage. A secondary gate in the FD-SOI transistor is used to create a channel from the back side so that even when the bias voltage on the first gate is small, the effective capacitance remains higher. The capacitance of the buried oxide layer is further utilized as a decoupling capacitor between supply and ground. In one example, a dual gate PMOS FD-SOI transistor is coupled to an operational amplifier and a high voltage output driver to produce a precision-controlled voltage reference generator. In another example, two dual gate PMOS and one dual gate NMOS FD-SOI transistor are coupled to a charge pump, a phase frequency detector, and a current-controlled oscillator to produce a high-performance phase locked loop circuit in which the decoupling capacitor footprint is smaller, in comparison to the conventional usage of passive well capacitance.

Dual gate FD-SOI transistors are used as MOSFET capacitors to replace passive well capacitors in analog microcircuits. Use of the dual gate FD-SOI devices helps to reduce unstable oscillations and improve circuit performance. A thick buried oxide layer within the substrate of an FD-SOI transistor forms a capacitive dielectric that can sustain high operating voltages in the range of 1.2 V-3.3 V, above the transistor threshold voltage. A secondary gate in the FD-SOI transistor is used to create a channel from the back side so that even when the bias voltage on the first gate is small, the effective capacitance remains higher. The capacitance of the buried oxide layer is further utilized as a decoupling capacitor between supply and ground. In one example, a dual gate PMOS FD-SOI transistor is coupled to an operational amplifier and a high voltage output driver to produce a precision-controlled voltage reference generator. In another example, two dual gate PMOS and one dual gate NMOS FD-SOI transistor are coupled to a charge pump, a phase frequency detector, and a current-controlled oscillator to produce a high-performance phase locked loop circuit in which the decoupling capacitor footprint is smaller, in comparison to the conventional usage of passive well capacitance.

A method comprising activating an internal switch within a packaged electronic device to connect to a reference ground of an internal voltage source to a first input of an analog front end, receiving an external ground potential voltage at a first package pin of the packaged electronic device, generating a zero detector output signal for the packaged electronic device at a second package pin, activating the internal switch to connect the first input of the analog front end to the internal voltage source, receiving a second voltage level at the first package pin that generates a second output signal that matches the zero detector output signal, and receiving trim instructions to trim an internal voltage generated by the internal voltage source to a voltage level that is closer to a target voltage level.

A method comprising activating an internal switch within a packaged electronic device to connect to a reference ground of an internal voltage source to a first input of an analog front end, receiving an external ground potential voltage at a first package pin of the packaged electronic device, generating a zero detector output signal for the packaged electronic device at a second package pin, activating the internal switch to connect the first input of the analog front end to the internal voltage source, receiving a second voltage level at the first package pin that generates a second output signal that matches the zero detector output signal, and receiving trim instructions to trim an internal voltage generated by the internal voltage source to a voltage level that is closer to a target voltage level.

A power manager circuit is provided. The power manager circuit includes a bandgap reference circuit, first and second monitoring circuits, and a reference buffer. The bandgap reference circuit generates a first voltage, based on an external voltage that is external to the power manager circuit. The first monitoring circuit determines a logical value of a first alarm signal, based on whether a first voltage level of the first voltage is within a first range. The reference buffer generates a second voltage, based on the first voltage. The second monitoring circuit determines a logical value of a second alarm signal, based on whether a second voltage level of the second voltage is within a second range.

A power manager circuit is provided. The power manager circuit includes a bandgap reference circuit, first and second monitoring circuits, and a reference buffer. The bandgap reference circuit generates a first voltage, based on an external voltage that is external to the power manager circuit. The first monitoring circuit determines a logical value of a first alarm signal, based on whether a first voltage level of the first voltage is within a first range. The reference buffer generates a second voltage, based on the first voltage. The second monitoring circuit determines a logical value of a second alarm signal, based on whether a second voltage level of the second voltage is within a second range.

Apparatus and methods for radio frequency (RF) switch control are provided. In certain embodiments, a level shifter for an RF switch includes a first level-shifting n-type transistor, a first cascode n-type transistor in series with the first level-shifting n-type transistor between a negative charge pump voltage and a first output that provides a first switch control signal, a first level-shifting p-type transistor, a first cascode p-type transistor in series with the first level-shifting p-type transistor between a positive charge pump voltage and the first output, and a second cascode p-type transistor between a regulated voltage and a gate of the first level-shifting n-type transistor and controlled by a first switch enable signal.

Apparatus and methods for radio frequency (RF) switch control are provided. In certain embodiments, a level shifter for an RF switch includes a first level-shifting n-type transistor, a first cascode n-type transistor in series with the first level-shifting n-type transistor between a negative charge pump voltage and a first output that provides a first switch control signal, a first level-shifting p-type transistor, a first cascode p-type transistor in series with the first level-shifting p-type transistor between a positive charge pump voltage and the first output, and a second cascode p-type transistor between a regulated voltage and a gate of the first level-shifting n-type transistor and controlled by a first switch enable signal.