G
PHYSICS
G
PHYSICS
G11
INFORMATION STORAGE
G11
INFORMATION STORAGE
G11C
STATIC STORES
G11C
STATIC STORES
11/00
Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
11/00
Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
G11C11/21
using electric elements
G11C11/21
using electric elements
G11C11/34
using semiconductor devices
G11C11/34
using semiconductor devices
G11C11/40
using transistors
G11C11/40
using transistors
G11C11/41
forming; static; cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
G11C11/41
forming; static; cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
G11C11/413
Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
G11C11/413
Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
G11C11/417
for memory cells of the field-effect type
G11C11/417
for memory cells of the field-effect type
G11C11/419
Read-write [R-W] circuits
G11C11/419
Read-write [R-W] circuits