An electronic component (10) comprising a plurality of switching elements (1) which comprise, in this sequence, a first electrode (16), a molecular layer (18) bonded to a substrate, and a second electrode (20), where the molecular layer essentially consists of molecules (M) which contain a connecting group (V) and an end group (E) having a polar or ionic function, is suitable as memristive device for digital information storage.

A memory cell includes an input coupled to a read line, an output coupled to a circuit ground, a bi-polar memristor, and at least one address switch coupled to an address line to select the memory cell. A memory includes the bi-polar memristor and a one-way current conducting device, wherein the one-way current conducting device is positioned between the memristor cell output and the circuit ground, or between the read line and the memristor cell input.

One example method includes encoding data as a polysaccharide structure, synthesizing the polysaccharide structure to create polysaccharide storage media that comprises the data, and storing the polysaccharide storage media. The example method may also include receiving a read request directed to the polysaccharide storage media, mapping the polysaccharide structure to create a map in response to the read request, traversing the map of the polysaccharide structure to determine an X-base number, and obtaining the data by converting the X-base number to a binary form.

A method of storing information using monomers such as nucleotides is provided including converting a format of information into a plurality of bit sequences of a bit stream with each having a corresponding bit barcode, converting the plurality of bit sequences to a plurality of corresponding oligonucleotide sequences using one bit per base encoding, synthesizing the plurality of corresponding oligonucleotide sequences on a substrate having a plurality of reaction locations, and storing the synthesized plurality of corresponding oligonucleotide sequences.

An electronic switching element is described having, in sequence, a first electrode, a molecular layer bonded to a substrate, and a second electrode. The molecular layer contains compounds of formula I, R.sup.1-(A.sup.1-Z.sup.1).sub.r—B.sup.1—(Z.sup.2-A.sup.2).sub.s-Sp-G, wherein A.sup.1, A.sup.2, B.sup.1, Z.sup.1, Z.sup.2, Sp, G, r, and s are as defined herein, in which a mesogenic radical is bonded to the substrate via a spacer group, Sp, by means of an anchor group, G. The switching element is suitable for production of components that can operate as a memristive device for digital information storage.

A molecular scrivener reads data from or writes data to a macromolecule and includes: a pair of shielding electrodes; a scrivener electrode between the first and second shielding electrodes and that electrically floats at a third potential that, in an absence of a charged or dipolar moiety of the macromolecule, is intermediate between the first and second potentials and changes in a presence of the charged or dipolar moiety; a dielectric layer interposed between shielding electrodes and the scrivener electrode; and a nanopore that communicates the macromolecule through the electrodes and dielectric layers. Reading data from or writing data to a macromolecule includes: sequentially receiving, at the scrivener electrode, individual moieties of the macromolecule so that the third potential responds to individual moieties; communicating the macromolecule from the scrivener electrode to the second shielding electrode and from second shielding electrode to expel the macromolecule from the nanopore.

Disclosed are a self-healing memory device including a lower electrode; a polymer nanocomposite layer formed on the lower electrode, wherein, when a structural defect occurs, the polymer nanocomposite layer repairs the structural defect and restores a memory function damaged due to the structural defect through a self-healing mechanism characterized by movement of a polymer material and hydrogen bonding; and an upper electrode formed on the polymer nanocomposite layer and a method of manufacturing the self-healing memory device.

A system and method of storing and reading digital data, including providing a nanopore polymer memory (NPM) device having at least one memory cell comprising at least two addition chambers each arranged to add a unique chemical construct (or codes) to a polymer (or DNA) string when the polymer enters the respective addition chamber, the data comprising a series of codes; successively steering the polymer from deblock chambers through the nanopore into the addition chambers to add codes to the polymer to create the digital data pattern on the polymer; and accurately controlling the bit rate of the polymer using a servo controller. The device may have loading chamber(s) to load (or remove) the polymer into/from the deblock chambers through at least one “micro-hole”. The cell may be part of a memory system that stores and retrieves “raw” data and allows for remote retrieval and conversion. The cell may store multi-bit data having a plurality of states for the codes.

Methods and systems for sequence-controlled polymer encoding, decoding, and storage are provided. In various embodiments, input data is encoded into one or more sequence controlled polymer, wherein encoding the input data comprises applying an error-correction code. The one or more sequence-controlled polymer are synthesized. The synthesized one or more sequence-controlled polymer are encapsulated in a plurality of particles. The plurality of particles are embedded into a feedstock.

Several embodiments of memory devices and systems with selective page-based refresh are disclosed herein. In one embodiment, a memory device includes a controller operably coupled to a main memory having at least one memory region comprising a plurality of memory pages. The controller is configured to track, in one or more refresh schedule tables stored on the memory device and/or on a host device, a subset of memory pages in the plurality of memory pages configured to be refreshed according to a refresh schedule. In some embodiments, the controller is further configured to refresh the subset of memory pages in accordance with the refresh schedule.