A thermistor includes a thermistor element, a protective film formed on the surface of the thermistor element, and electrode portions formed on both end portions of the thermistor element, in which the protective film is formed of silicon oxide, and, as a result of observing a bonding interface between the thermistor element and the protective film, a ratio L/L.sub.0 of a length L of an observed peeled portion to a length L.sub.0 of the bonding interface in an observation field is 0.16 or less.

A strain gauge includes a flexible resin substrate; a functional layer formed of a metal, an alloy, or a metal compound, directly on one surface of the substrate; a resistor formed of a film including Cr, CrN, and Cr.sub.2N, on one surface of the functional layer; and an insulating resin layer with which the resistor is coated.

Various embodiments of the teachings herein include an apparatus for voltage equalization in square-wave voltages of electric motors. The apparatus may include: a terminal board circuit wherein phases U, V, and W each comprises input and output cabled conductors summing to at least 6 cables; and a bridge between two of the at least six cables connecting two or more of the at least 6 cable inputs and outputs. The bridge is partially conductive such that its electrical resistance markedly reduces above a threshold value. The partial conductivity results from filler particles in an embedding matrix determining a reduction of the resistance in the bridge above the threshold value.

The invention relates to a switch including a switch housing, a contact system and a base disposed in the switch housing, a resistive element for diagnosing a state of a switch, and at least two terminals leading from the base. The resistive element has a specific resistance value. The resistive element is a conductive material formed on the base, the terminals being electrically connected by the conductive material.

A thermistor has a thermistor element, a protective film, and an electrode portion. The protective film is formed of a SiO.sub.2 film having a film thickness in a range of 50 nm or more and 1000 nm or less. The protective film is formed in contact with the thermistor element. Alkali metal is unevenly distributed in a region including an interface between the thermistor element and the protective film.

A shunt resistor (1) includes: a resistance element (3); a first electrode (5A) and a second electrode (5B) coupled to both sides of the resistance element (3); a first fusion material (6A) and a second fusion material (6B) electrically coupled to the first electrode (5A) and the second electrode (5B), respectively, the first fusion material (5A) and the second fusion material (5B) haying electric conductivity; and at least one board (10) coupled to the first electrode (5A) and the second electrode 15B) by the first fusion material (6A) and the second fusion material (6B). The first fusion material (6A) is arranged in a first through-hole (7A) formed in the first electrode (5A) or the board (10), and the second fusion material (6B) is arranged it as second through-hole (7B) formed in the second electrode (5B) or the board (10).

Provided according to embodiments of the invention are varistor ceramic formulations that include zinc oxide (ZnO). In particular, varistor ceramic formulations of the invention may include dopants including an alkali metal compound, an alkaline earth compound, an oxide of boron, an oxide of aluminum, or a combination thereof. Varistor ceramic formulations may also include other metal oxides. Also provided according to embodiments of the invention are varistor ceramic materials formed by sintering a varistor ceramic formulation according to an embodiment of the invention. Further provided are varistors formed from such ceramic materials and methods of making such materials.

An integrated circuit includes a thin film resistor body that is formed over a dielectric layer. An interfacial layer is formed on the thin film resistor body and resistor heads are formed on the interfacial layer. The thin film resistor body includes nickel chromium aluminum (NiCrAl) and the resistor heads include titanium tungsten (TiW).

The present invention concerns a layer structure comprising: a substrate having a glass or ceramic surface, a layer A at least partially covering the glass or ceramic surface of the substrate, wherein layer A comprises a glass in which at least two mutually different elements are contained as oxides, and a layer B at least partially covering the layer A. Layer B comprises: a resistance alloy having a temperature coefficient of electrical resistance less than 150 ppm/K, and optionally a glass containing at least two mutually different elements as oxides. Layer B contains not more than 20 weight percent of glass based on the total weight of layer B.

Systems and methods are provided for presenting branding elements with electronic content. In one implementation, a method is provided that includes receiving, from a user device, a request that identifies a segment of electronic content and that contains information specifying a display configuration of the user device. The method further includes selecting first metadata including information defining how at least one branding element is to be presented based on the display configuration of the user device, and selecting second metadata for the requested segment of electronic content, the second metadata including information related to presenting the requested segment of electronic content. Additionally, the method includes instructing the user device to generate a presentation based on the selected first metadata and the selected second metadata, the presentation including the requested segment of electronic content and the at least one branding element.