A chip component comprises: an insulating substrate on which a resistor serving as a functional element is formed; a pair of internal electrodes (front electrodes, end surface electrodes, and back electrodes) that is formed to cover both end portions of the insulating substrate and connected to the resistor; a barrier layer that is formed on a surface of each of the internal electrodes and mainly composed of nickel; and an external connection layer that is formed on a surface of the barrier layer and mainly composed of tin, and the barrier layer is composed of alloy plating (Ni—P) including nickel and phosphorus, which is formed by electrolytic plating, and a content ratio of phosphorus relative to nickel is set in a range of 0.5% to 5% so that the barrier layer has magnetism.

The resistive material contains copper and manganese, an oxide film of manganese being formed on a surface of the resistive material.

The present disclosure relates to a negative temperature coefficient product comprising an electrically conductive percolation network of printable NTC material as particles in a cross-linked dielectric polymer matrix and to a method of manufacturing thereof. The particles comprising a spinel phase, preferably a C-spinel phase, having a general formula M.sub.3O.sub.4 comprising at least a first metal M.sup.I that is manganese and second metal M.sup.II that is nickel. In addition the particles include a nickel oxide phase. The printable NTC material can be dispersed in a printable NTC ink comprising a dispersant, from which the NTC product, e.g. a thermistor, can be formed, e.g., after drying of the dispersant. During processing the ink is kept at a temperature below 300° C. Optionally, the spinel phase comprises a further metal M.sup.III. The weight fraction of nickel oxide with respect to the overall mass of the printable NTC material is preferably in a range between one and twenty weight percent.

To provide a thick film resistor paste for a resistor having no abnormalities of cracks in appearance and sufficient surge resistance, especially for low resistance, while using lead borosilicate glass, a thick film resistor using the thick film resistor paste, and an electronic component provided with the thick film resistor. A thick film resistor paste comprises a ruthenium-oxide-containing glass powder and an organic vehicle, the ruthenium-oxide-containing glass powder comprises 10 to 60 mass % of ruthenium oxide, a glass composition of the ruthenium-oxide-containing glass powder comprises 60 mass % or less of silicon oxide, 30 to 90 mass % of lead oxide, 5 to 50 mass % of boron oxide relative to 100 mass % of glass components, and, a combined amount of silicon oxide, lead oxide and boron oxide by mass % is 50 mass % or more relative to 100 mass % of the glass components.

A multilayer component and a mathod for producing a multilayer component are disclosed. In an embodiment the multilayer component includes a ceramic main element being a varistor ceramic and at least one metal structure, wherein the metal structure is cosintered, and wherein the main element is doped with a material of the metal structure in such a way that a diffusion of the material from the metal structure into the main element during a sintering operation is reduced.

Provided is a thermistor sintered body which stably provides a desired B constant even if a composition deviation of an additive element has occurred. The thermistor sintered body-includes a Y.sub.2O.sub.3 phase and a YMnO.sub.3 phase, wherein a chemical composition of Cr, Mn, Ca and Y excluding oxygen includes Cr: 3 mol % or less (while including 0%), Mn: 5 to 18 mol %, Ca: 1 to 18 mol %, and Sr: 1 to 25 mol %, with the balance being unavoidable impurities and Y. In the thermistor sintered body, Ca and Sr may be dissolved in the YMnO.sub.3 phase.

The thick film resistor paste for a resistor has no abnormalities of cracks in appearance and sufficient surge resistance, especially for low resistance, while using lead borosilicate glass. The thick film resistor paste comprises a silver powder or a palladium powder, or a mixture of both of the silver powder and the palladium powder, a ruthenium-oxide-containing glass powder and an organic vehicle, the ruthenium-oxide-containing glass powder comprises 10 to 60 mass % of ruthenium oxide, a glass composition of the ruthenium-oxide-containing glass powder comprises 3 to 60 mass % of silicon oxide, 30 to 90 mass % of lead oxide, 5 to 50 mass % of boron oxide relative to 100 mass % of glass components, and, a combined amount of silicon oxide, lead oxide and boron oxide by mass % is 50 mass % or more relative to 100 mass % of the glass components.

To provide a thick film resistor paste for a resistor having a smaller resistance change rate and excellent surge resistance, a thick film resistor using the thick film resistor paste, and an electronic component provided with the thick film resistor. A thick film resistor paste comprises a lead-ruthenate-containing glass powder and an organic vehicle, the lead-ruthenate-containing glass powder comprises 10 to 70 mass % of lead ruthenate, a glass composition of the lead-ruthenate-containing glass powder comprises 3 to 30 mass % of silicon oxide, 30 to 90 mass % of lead oxide. 5 to 50 mass % of boron oxide relative to 100 mass % of glass components, and, a combined amount of silicon oxide, lead oxide and boron oxide by mass % is 50 mass % or more relative to 100 mass % of the glass components.

A thermistor material and a method for preparing a thermistor material are provided. The thermistor material is prepared by mixing and heating a mixture containing BaTiO.sub.3, B.sub.2O.sub.3, SiO.sub.2, Li.sub.2O, P.sub.2O.sub.5, Cs.sub.2O, Nd.sub.2O.sub.3, Al.sub.2O.sub.3 and TiO.sub.2.

The present invention concerns a layer structure comprising: a substrate having a glass or ceramic surface, a layer A at least partially covering the glass or ceramic surface of the substrate, wherein layer A comprises a glass in which at least two mutually different elements are contained as oxides, and a layer B at least partially covering the layer A. Layer B comprises: a resistance alloy having a temperature coefficient of electrical resistance less than 150 ppm/K, and optionally a glass containing at least two mutually different elements as oxides. Layer B contains not more than 20 weight percent of glass based on the total weight of layer B.