The electron gun is provided with a first anode electrode and a second anode electrode to generate an acceleration and deceleration electric field. A lens electric field makes it possible to irradiate a sample with an electron beam emitted from a part outside an optical axis of the photoelectric film without being blocked by a differential exhaust diaphragm. A wide range of electron beams off-optical axis can be used even in a high-brightness photocathode that requires high vacuum. As a result, the photoelectric film and the electron gun can be extended in life, can be stabilized, and can be increased in brightness. Further, it is possible to facilitate a control of emitting electron beams from a plurality of positions on the photoelectric film, a timing control of emitting electron beams from a plurality of positions, a condition control of an electron beam in an electron microscope using electron beams.

A path of a spin-polarized electron beam is split into two by a splitter. A spin direction of the spin-polarized electron beam is rotated by a spin direction rotator disposed on a first path, and delayed by a first delay device. On a second path, the electron beam passes through a sample stage. The spin-polarized electron beams split into the first path and the second path are superposed by a biprism, and its intensity distribution is measured. Coherence is measured from a relation between a spin direction rotation angle, a delay time, and a visibility of an interference fringe.

A non-contact angle measuring apparatus includes a matter-wave and energy (MWE) particle source and a detector. The MWE particle source is used for generating boson or fermion particles. The detector is used for detecting a plurality peaks or valleys of an interference pattern generated by 1) the boson or fermion particles corresponding to a slit, a bump, or a hole of a first plane and 2) matter waves' wavefront-split associated with the boson or fermion particles reflected by a second plane, wherein angular locations of the plurality peaks or valleys of the interference pattern, a first distance between a joint region of the first plane and the second plane, and a second distance between the detector and the slit are used for deciding an angle between the first plane and the second plane.

An inspection method for a substrate, the inspection method including: providing an electron beam having a first polarization state to a sample of the semiconductor substrate; detecting a first response signal of the sample caused by interaction of the electron beam having the first polarization state with the sample; providing an electron beam having a second polarization state to the sample of the semiconductor substrate; detecting a second response signal of the sample caused by interaction of the electron beam having the second polarization state with the sample; and determining a geometric or material property of the sample, based on the first response signal and the second response signal.

Provided is an image type electron spin polarimeter. It at least comprises a scattering target, a two-dimensional electron detector and an electron bending unit, wherein the electron bending unit is used for bending the orbit of the incident (scattered) electrons to a first (second) angle to arrive the scattering target (two-dimensional electron detector) with an optimal incident angle, and to transfer the image of the electron intensities from the entrance plane (scattering target) to the scattering target (two-dimensional electron detector) with small aberrations, and to separate the orbits of incident and scattered electrons to increase the degree of freedom of the geometric configuration of each component of the spin polarimeter. At least one of the first and second angles is not 0°, thereby achieving the first transfer of the two-dimensional image of electron intensities on the entrance plane to the scattering target and the second transfer from scattering target to the two-dimensional electron detector respectively with small aberrations, and then achieving multichannel measurements of the electron spin.

To implement a charged particle beam device including an iron thin film spin detector. The charged particle beam device includes: a charged particle column 201 configured to perform scanning on a sample 203 with a charged particle beam 202; a spin detector including an iron thin film 207, a plurality of coils 208 configured to magnetize the iron thin film, a conveying lens 206 configured to focus, on the iron thin film, secondary electrons 204 emitted from the sample due to irradiation of the charged particle beam, and an electron detector 210 configured to detect backscattered electrons 209 emitted due to the iron thin film being irradiated with the secondary electrons; and a control unit 217 configured to control switching of a magnetization direction of the iron thin film in synchronization with scanning of one line with the charged particle beam from the charged particle column.

A scanning electron microscope includes a spin detector configured to measure spin polarization of a secondary electron emitted from a sample, and an analysis device configured to analyze measurement data of the spin detector. The analysis device determines a width of a region where the secondary electron spin polarization locally changes in the measurement data. The analysis device further evaluates a strain in the sample based on the width of the region. With a configuration of the scanning electron microscope, it is possible to perform analysis of a strain in a magnetic material with high accuracy.

A scanning electron microscope includes a spin detector configured to measure secondary electron spin polarization of secondary electrons emitted from the sample, and an analysis device configured to analyze secondary electron spin polarization data measured by the spin detector. The analysis device evaluates the strain in the sample by calculating a difference in the secondary electron spin polarization data of adjacent pixels.

A scanning electron microscope includes a spin detector configured to measure secondary electron spin polarization of secondary electrons emitted from the sample, and an analysis device configured to analyze secondary electron spin polarization data measured by the spin detector. The analysis device evaluates the strain in the sample by calculating a difference in the secondary electron spin polarization data of adjacent pixels.

A spin polarimeter includes: a particle beam source or a photon beam source that is a probe for a sample; a sample chamber in which the sample is accommodated; a spin detector that includes a target to be irradiated with an electron generated from the sample by a particle beam or a photon beam from the probe, and a target chamber in which the target is accommodated, and is configured to detect a spin of the sample by detecting an electron scattered on the target; a first exhaust system that is configured to exhaust the sample chamber; a second exhaust system that is configured to exhaust the target chamber; and an orifice that is disposed between the target chamber and the sample chamber.