A rapid and automatic virus imaging and analysis system includes (i) electron optical sub-systems (EOSs), each of which has a large field of view (FOV) and is capable of instant magnification switching for rapidly scanning a virus sample; (ii) sample management sub-systems (SMSs), each of which automatically loads virus samples into one of the EOSs for virus sample scanning and then unloads the virus samples from the EOS after the virus sample scanning is completed; (iii) virus detection and classification sub-systems (VDCSs), each of which automatically detects and classifies a virus based on images from the EOS virus sample scanning; and (iv) a cloud-based collaboration sub-system for analyzing the virus sample scanning images, storing images from the EOS virus sample scanning, and storing and analyzing machine data associated with the EOSs, the SMSs, and the VDCSs.

Disclosed herein are CPM support systems, as well as related apparatuses, methods, computing devices, and computer-readable media. For example, in some embodiments, a charged particle microscope computational support apparatus may include: first logic to, for each angle of a plurality of angles, receive an associated image of a specimen at the angle, and generate an associated scan mask based on one or more regions-of-interest in the associated image; second logic to, for each angle of the plurality of angles, generate an associated data set of the specimen by processing data from a scan, in accordance with the associated scan mask, by a charged particle microscope of the specimen at the angle; and third logic to provide, for each angle of the plurality of angles, the associated data set of the specimen to reconstruction logic to generate a three-dimensional reconstruction of the specimen.

The present disclosure relates to dual beam device and three-dimensional circuit pattern inspection techniques by cross sectioning of inspection volumes with large depth extension exceeding 1 μm below the surface of a semiconductor wafer, as well as methods, computer program products and apparatuses for generating 3D volume image data of a deep inspection volume inside a wafer without removal of a sample from the wafer. The disclosure further relates to 3D volume image generation and cross section image alignment methods utilizing a dual beam device for three-dimensional circuit pattern inspection.

A wafer inspection system is disclosed. According to certain embodiments, the system includes an electron detector that includes circuitry to detect secondary electrons or backscattered electrons (SE/BSE) emitted from a wafer. The electron beam system also includes a current detector that includes circuitry to detect an electron-beam-induced current (EBIC) from the wafer. The electron beam system further includes a controller having one or more processors and a memory, the controller including circuitry to: acquire data regarding the SE/BSE; acquire data regarding the EBIC; and determine structural information of the wafer based on an evaluation of the SE/BSE data and the EBIC data.

A multi-beam charged particle microscope and a method of operating a multi-beam charged particle microscope for wafer inspection with high throughput and with high resolution and high reliability are provided. The method of operation and the multi-beam charged particle beam microscope comprises a mechanism for a synchronized scanning operation and image acquisition by a plurality of charged particle beamlets according a selected scan program, wherein the selected scan program can be selected according an inspection task from different scan programs.

A pattern inspection apparatus includes a secondary electron image acquisition mechanism to include a deflector deflecting multiple primary electron beams and a detector detecting multiple secondary electron beams, and acquire a secondary electron image corresponding to each of the multiple primary electron beams by scanning a target object with a pattern thereon with the multiple primary electron beams by the deflector, and detecting the multiple secondary electron beams from the target object by the detector, a storage device to store individual correction kernels each generated for individually adjusting a secondary electron image corresponding to each primary electron beam concerning a reference pattern to be commensurate with a reference blurred image, and a correction circuit to correct, by correspondingly using the individual correction kernel, the secondary electron image corresponding to each primary electron beam acquired from the inspection target object.

Disclosed herein are specimen imaging systems, comprising: a sample stage in a vacuum environment, the sample stage configured to support a specimen; an electron beam generator configured to focus an electron beam on a first predetermined location on the specimen; a nanospray dispenser configured to dispense a nanospray onto a second predetermined location on the specimen; a mass spectrometer; and an extraction conduit configured to extract a plume of charged particles generated as a result of contact between the nanospray and the specimen and deliver the charged particles to the mass spectrometer. The system can create a topological and chemical map of the specimen by analyzing at least a portion of the specimen with a mass spectrometer to determine a chemical composition of the specimen at the second predetermined location and analyzing at least a portion of the specimen with the electron beam to determine a surface topology.

The device for observing permeation and diffusion path of observation target gas includes: a scanning electron microscope 15; an observation target ion detecting unit 20; an observation target gas supply unit 19; a diaphragm-type sample holder 12, to which the sample is mounted in attachable/detachable state, as a diaphragm dividing between the analysis chamber 11 and the observation target gas pipe 14; and a control unit 50. The control unit acquires a SEM image and at the same time detects the observation target gas, which diffuses within the sample and is discharged to the surface of the sample, by electron stimulated desorption, in a state where stress is applied to the sample due to differential pressure generated between the analysis chamber and the observation target gas pipe by supplying the observation target gas, and obtains an ESD image of the observation target ions.

A charged particle beam device scans a specimen with a charged particle beam and generates an image based on a detected signal from a detector that detects a signal generated from the specimen based on the scan performed by the charged particle beam. The charged particle beam device includes: a blanker that performs blanking of the charged particle beam; an image acquisition unit that acquires a plurality of images by controlling the blanking during the scan performed by the charged particle beam, the plurality of images including pixels corresponding to a region of the specimen that is irradiated with the charged particle beam and pixels corresponding to a region of the specimen that is not irradiated with the charged particle beam; and an integrated image generation unit that generates an integrated image by integrating the plurality of acquired images.

This cross-section observation device bombards an object with a charged particle beam to repeatedly expose cross-sections of the object, bombards at least some of the cross-sections from among the plurality of the exposed cross-sections with a charged particle beam to acquire cross-sectional image information describing each of the at least some of the cross-sections, generates for each of these cross-sections a cross-sectional image described by the cross-sectional image information acquired, and generates a three-dimensional image in which the generated cross-sectional images are stacked together. This cross-section observation device displays a first three-dimensional image along with a second three-dimensional image, the first three-dimensional image being a three-dimensional image from the stacking of first cross-sectional images, which are cross-sectional images of the cross-sections described by the corresponding cross-sectional image information acquired on the basis of a first condition, and the second three-dimensional image being a three-dimensional image from the stacking of second cross-sectional images, which are cross-sectional images of the cross-sections described by the corresponding cross-sectional image information acquired on the basis of a second condition.