A reference image is generated based on an illumination condition and element information of a specimen. The reference image includes a figure indicating a characteristic X-ray generation range, a numerical value indicating a characteristic X-ray generation depth, or the like. The reference image changes with a change of an accelerating voltage, a tilt angle, or an element forming the specimen. The reference image may include a figure indicating a landing electron scattering range, a figure indicating a back-scattered electron generation range, or the like.

A method for evaluating a specimen, the method can include positioning an energy dispersive X-ray (EDX) detector at a first position; scanning a flat surface of the specimen by a charged particle beam that exits from a charged particle beam optics tip and propagates through an aperture of an EDX detector tip; detecting, by the EDX detector, x-ray photons emitted from the flat surface as a result of the scanning of the flat surface with the charged particle beam; after a completion of the scanning of the flat surface, positioning the EDX detector at a second position in which a distance between the EDX detector tip and a plane of the flat surface exceeds a distance between the plane of the flat surface and the charged particle beam optics tip; and wherein a projection of the EDX detector on the plane of the flat surface virtually falls on the flat surface when the EDX detector is positioned at the first position and when the EDX detector is positioned at the second position.

A method for inspecting a sample by means of a multi-beam charged particle inspection apparatus, and an apparatus for performing this method are provided. The multi-beam charged particle inspection apparatus is configured to project an array of charged particle beamlets within an exposure area on the sample. The apparatus includes a detection system for detecting X-Rays and/or cathodoluminescent light from the exposure area emitted by the sample due to an interaction of the array of charged particle beamlets with the sample. The method includes the steps of projecting the array of charged particle beamlets within the exposure area on the sample, and monitoring a combined emission of X-Rays and/or cathodoluminescent light from the interaction of substantially all charged particle beamlets of the array of charged particle beamlets with the sample.

Method and system are disclosed for determining sample composition from spectral data acquired by a charged particle microscopy system. Chemical elements in a sample are identified by processing the spectral data with a trained neural network (NN). If the identified chemical elements not matching with a known elemental composition of the sample, the trained NN is retrained with the spectral data and the known elemental composition of the sample. The retrained NN can then be used to identify chemical elements within other samples.

A mask member is provided at an entrance opening of a mirror unit. Of a first diffraction grating and a second diffraction grating, when the second diffraction grating is used, the mask member masks preceding mirrors. With this process, aberration caused by reflective X-ray is suppressed. When the first diffraction grating is used, the mask member does not function. Alternatively, the mask member and another mask member may be selectively used.

Method and system are disclosed for determining sample composition from spectral data acquired by a charged particle microscopy system. Chemical elements in a sample are identified by processing the spectral data with a trained neural network (NN). If the identified chemical elements not matching with a known elemental composition of the sample, the trained NN is retrained with the spectral data and the known elemental composition of the sample. The retrained NN can then be used to identify chemical elements within other samples.

A method of evaluating a region of interest of a sample including: positioning the sample within in a vacuum chamber of an evaluation tool that includes a scanning electron microscope (SEM) column and a focused ion beam (FIB) column; acquiring a plurality of two-dimensional images of the region of interest by alternating a sequence of delayering the region of interest with a charged particle beam from the FIB column and imaging a surface of the region of interest with the SEM column; generating an initial three-dimensional data cube representing the region of interest by stacking the plurality of two-dimensional images on top of each other in an order in which they were acquired; identifying distortions within the initial three-dimensional data cube; and creating an updated three-dimensional data cube that includes corrections for the identified distortions.

A semiconductor analysis system includes a machining device that machines a semiconductor wafer to prepare a thin film sample for observation, a transmission electron microscope device that acquires a transmission electron microscope image of the thin film sample, and a host control device that controls the machining device and the transmission electron microscope device. The host control device evaluates the thin film sample based on the transmission electron microscope image, updates acquisition conditions of the transmission electron microscope image based on an evaluation result of the thin film sample, and outputs the updated acquisition conditions to the transmission electron microscope device

A method of performing x-ray spectroscopy material analysis of a region of interest within a cross-section of a sample using an evaluation system that includes a focused ion beam (FIB) column, a scanning electron microscope (SEM) column, and an x-ray detector, including: forming a lamella having first and second opposing side surfaces in the sample by milling, with the FIB column, first and second trenches in the sample to expose the first and second sides surface of the lamella, respectively; depositing background material in the second trench, wherein the background material is selected such that the background material does not include any chemical elements that are expected to be within the region of interest of the sample; generating a charged particle beam with the SEM column and scanning the charged particle beam across a region of interest on the first side surface of the lamella such that the charged particle beam collides with the first side surface of the lamella at a non-vertical angle; and detecting x-rays generated while the region of interest is scanned by the charged particle beam.

A magnetic material observation method in accordance with the present invention includes: an irradiating step including irradiating a region of a sample with an excitation beam and thereby allowing a magnetic element contained in the sample to radiate a characteristic X-ray; a detecting step including detecting intensities of a right-handed circularly polarized component and a left-handed circularly polarized component contained in the characteristic X-ray; and a calculating step including calculating the difference between the intensity of the right-handed circularly polarized component and the intensity of the left-handed circularly polarized component. Reference to such a difference enables precise measurement of the direction or magnitude of magnetization without strict limitations as to the sample.