A system and method for etching workpieces in a uniform manner are disclosed. The system includes a semiconductor processing system that generates a ribbon ion beam, and a workpiece holder that scans the workpiece through the ribbon ion beam. The workpiece holder includes a plurality of independently controlled thermal zones so that the temperature of different regions of the workpiece may be separately controlled. In certain embodiments, etch rate uniformity may be a function of distance from the center of the workpiece, also referred to as radial non-uniformity. Further, when the workpiece is scanned, there may also be etch rate uniformity issues in the translated direction, referred to as linear non-uniformity. The present workpiece holder comprises a plurality of independently controlled thermal zones to compensate for both radial and linear etch rate non-uniformity.

The invention concerns a crucible assembly for physical vapor deposition on a surface comprising: a base (22) to support and drive in rotation a crucible (18) around a rotational axis (A), the base comprising a base upper surface (34) having a first alignment relief (30), a crucible (18) comprising: at least one cavity (24) disposed at a peripheral area (38) of the crucible (18) with regard to the rotational axis (A), a crucible bottom surface (25) intended to contact the base upper surface (34) of the base (22), the crucible bottom surface (25) having a second alignment relief (32) which is complementary shaped with regard to the first alignment relief (30), the second (32) alignment relief being disposed at a central area (36) of the crucible (18) with regard to the rotation axis (A).

Exemplary semiconductor processing systems may include a remote plasma source. The remote plasma source may include a first plasma block segment defining an inlet to an internal channel of the first plasma block segment. The first plasma block segment may also define a cooling channel between the internal channel of the first plasma block segment and a first exterior surface of the first plasma block segment. The remote plasma source may include a second plasma block segment defining an outlet from an internal channel of the second plasma block segment. The second plasma block segment may also define a cooling channel between the internal channel of the second plasma block segment and a first exterior surface of the second plasma block segment. The systems may include a semiconductor processing chamber defining an inlet fluidly coupled with the outlet from the remote plasma source.

An apparatus and method for depositing a carbon layer includes an arc discharge is formed between an electron source and an evaporation material by means of a first power supply device. The negative terminal of the first power supply device is connected in an electrically conducting manner to the electron source and the positive terminal of the first power supply device is connected in an electrically conducting manner to the evaporation material. A permanent magnet system and a solenoid coil are arranged in a rotationally symmetrical manner around the evaporation material. The evaporation material is formed as a graphite rod which is surrounded by at least one heat-insulating element at least on the rod end to be evaporated of the graphite rod.

A specimen machining device includes an illumination system that illuminates a specimen; a camera that photographs the specimen; and a processing unit that controls the illumination system and the camera, and acquires a machining control image which is used for controlling an ion source and a display image which is displayed on a display unit. The processing unit controls the illumination system to illuminate the specimen under a machining illumination condition; acquires the machining control image by controlling the camera to photograph the specimen illuminated under the machining control illumination condition; controls the ion source based on the machining control image; controls the illumination system to illuminate the specimen under a display illumination condition which is different from the machining control illumination condition; acquires the display image by controlling the camera to photograph the specimen illuminated under the display illumination condition; and displays the display image on the display unit.

A beam control method is provided that can be implemented with any hardware system for imaging and/or cutting such as SEM/FIB/HIM or charged particle lithography which alleviates the deposited energy overlap between pixels to increase resolution and precision while reducing damage. The method includes scanning a workpiece with e-beam lithography, proton lithography, ion beam lithography, optical lithography, ion beam imaging or FIB in a reduced or sub-sampled pattern, to reduce beam overlap, which can include the step of scanning the beam ensuring that there is the largest difference in time and space between consecutive beam locations.

A method of automatic detection of a required peak for sample machining by a focused ion beam uses for a filtration of a measured signal of secondary particles of a discrete wavelet transformation followed by a peak detection, and stops sample machining after the required a number of peaks has been reached.

A method for detecting radicals in process gases in a semiconductor fabrication assembly is provided where the semiconductor fabrication includes a plasma source and a mass spectrometer with an ion source. The method includes separating ions from the process gases and determining a fixed electron energy in which to measure the process gases. Process gases in the semiconductor fabrication assembly are continuously sampled. A first measurement is performed on the sampled process gases at the electron energy using the mass spectrometer, where the first measurement is performed with the plasma source off. A second measurement of the sampled process gases is performed at the fixed electron energy using the mass spectrometer, where the second measurement is performed with the plasma source on. An amount of a radical present in the sampled process gases is determined as a difference between the second measurement and the first measurement.

A method of evaluating a region of interest of a sample including: positioning the sample within in a vacuum chamber of an evaluation tool that includes a scanning electron microscope (SEM) column and a focused ion beam (FIB) column; acquiring a plurality of two-dimensional images of the region of interest by alternating a sequence of delayering the region of interest with a charged particle beam from the FIB column and imaging a surface of the region of interest with the SEM column; generating an initial three-dimensional data cube representing the region of interest by stacking the plurality of two-dimensional images on top of each other in an order in which they were acquired; identifying distortions within the initial three-dimensional data cube; and creating an updated three-dimensional data cube that includes corrections for the identified distortions.

A carrier generation source is provided, comprising a carrier generation area configured to provide carriers and a grid electrode, the grid electrode comprising an electrically conductive carrier, the carrier having a first side and a second side opposite the first side, the first side being directly adjacent the carrier generation area, the carrier having a plurality of through-holes extending from the first side through the carrier to the second side, the through-holes on the first side each having a first opening surface and the through-holes on the second side having a second opening surface, the first opening surface being larger than the second opening surface.