The processing of PFAS to convert them into safer substances comprises introducing gaseous or vapour phase PFAS into a treatment zone where microwave radiation of predetermined frequency and power level creates a plasma which at least partially dissociates the PFAS. There is also a system for remediating particulate solids, particularly soil, contaminated with PFAS, the method including directing microwave radiation to a body of particulate solids in the closed vessel so as to promote vaporization of PFAS which are then treated by exposure to the microwave produced plasma. Continuous and batch processing apparatus are disclosed. A preheating stage can dry the particulate solids to a pre-determined moisture content, and then a higher energy microwave heating promotes vaporization of PFAS. A partial vacuum created where particulate solids heated by the microwave radiation are yielding up PFAS promotes the vaporization of PFAS. Alternating cycles of high pressure during microwave irradiation and low pressure or partial vacuum can avoid plasma generation in the heating stage while optimizing vaporization of PFAS from the particulate solids.

A plasma processing apparatus includes a microwave output unit, a wave guide tube, a tuner, a demodulation unit, and a calculation unit. The microwave output unit outputs a microwave having power corresponding to setting power while frequency-modulating the microwave in a setting frequency range. The wave guide tube guides the microwave to an antenna of a chamber main body. The tuner is provided in the wave guide tube and adjusts a position of a movable plate. The demodulation unit is provided in the wave guide tube, and acquires travelling wave power and reflected wave power for each frequency. The calculation unit calculates a frequency at which a reflection coefficient, which is calculated on the basis of the travelling wave power and the reflected wave power, for each frequency becomes a minimum point as an absorption frequency.

Plasma generators and methods of generating plasma are disclosed. Electrodes in a reaction zone are energized by a high voltage power source that is electrically insulated from the electrodes. A first conductor array, preferably a coil, is electrically coupled to the power source and electrically insulated from the electrodes. A second conductor array, preferably a coaxial coil nested within the first conductor array, is electrically coupled to the electrodes. Electromagnetic induction between the first conductor array and the second conductor array is used to energize the electrodes and generate a plasma in the reaction zone. One or more microwaves are further directed at the plasma to form microwave plasma, either in parallel or in series. Such plasmas are used to reform a hydrocarbon feedstock into low C hydrocarbons, carbon, or hydrogen. Plasma generators combining induction plasma with serial microwave plasmas are further contemplated.

An artificial diamond plasma production device has a reaction chamber, a microwave emitting module, and a microwave lens. The microwave emitting module emits a circularly-polarized microwave into the reaction chamber. The microwave emitting module has a polarizing tube, a directing tube, a first waveguide, and a first linearly-polarized microwave source serially connected along a microwave traveling path. The microwave emitting module further has a second waveguide and a first matched load. The polarizing tube is configured to convert a linearly-polarized microwave into a circularly-polarized microwave or the other way round depending on traveling direction of the microwave. The directing tube has a first opening and a second opening which face toward different directions. The first waveguide is connected to the first opening. The first matched load is connected to the second opening via the second waveguide. Therefore, reflected microwave can be channeled out of the reaction chamber.

The invention includes a gas processing system for transforming a hydrocarbon-containing inflow gas into outflow gas products, where the system includes a gas delivery subsystem, a plasma reaction chamber, and a microwave subsystem, with the gas delivery subsystem in fluid communication with the plasma reaction chamber, so that the gas delivery subsystem directs the hydrocarbon-containing inflow gas into the plasma reaction chamber, and the microwave subsystem directs microwave energy into the plasma reaction chamber to energize the hydrocarbon-containing inflow gas, thereby forming a plasma in the plasma reaction chamber, which plasma effects the transformation of a hydrocarbon in the hydrocarbon-containing inflow gas into the outflow gas products, which comprise acetylene and hydrogen. The invention also includes methods for the use of this gas processing system.

A microwave output device includes a microwave generator configured to generate a pulse-modulated microwave; an output unit; a first directional coupler configured to output a part of a progressive wave; and a measurement device configured to determine measurement values of High and Low levels of a power of the progressive wave. The microwave generator alternately generates a first microwave having a bandwidth and a second microwave having a single frequency peak in synchronization with switching of the High level and the Low level; averages the measurement value corresponding to the first microwave with a moving average time equal to or larger than a reciprocal of a carrier pitch; averages the measurement value corresponding to the second microwave with a moving average time less than the reciprocal of the carrier pitch; and controls the powers of High and Low levels based on the averaged measurement values and set powers.

Plasma generators and methods of generating plasma are disclosed. Electrodes in a reaction zone are energized by a high voltage power source that is electrically insulated from the electrodes. A first conductor array, preferably a coil, is electrically coupled to the power source and electrically insulated from the electrodes. A second conductor array, preferably a coaxial coil nested within the first conductor array, is electrically coupled to the electrodes. Electromagnetic induction between the first conductor array and the second conductor array is used to energize the electrodes and generate a plasma in the reaction zone. One or more microwaves are further directed at the plasma to form microwave plasma, either in parallel or in series. Such plasmas are used to reform a hydrocarbon feedstock into low C hydrocarbons, carbon, or hydrogen. Plasma generators combining induction plasma with serial microwave plasmas are further contemplated.

A method of forming a silicon nitride film on a substrate having a recess pattern formed in a surface thereof, includes: forming the silicon nitride film in conformity to the surface of the substrate by supplying each of a raw material gas containing silicon and a nitriding gas for nitriding the raw material gas into a processing container in which the substrate is accommodated; shrinking the silicon nitride film such that a thickness thereof is reduced from a bottom side toward an upper side of the recess pattern by supplying a plasmarized shaping gas for shaping the silicon nitride film to the substrate in a state where the supply of the raw material gas containing silicon into the processing container is stopped; and burying the silicon nitride film in the recess pattern by alternately and repeatedly performing the forming the silicon nitride film and the shrinking the silicon nitride film.

A semiconductor manufacturing apparatus includes: a processing container that accommodates a substrate holder that holds a plurality of substrates in a shelf shape; a gas supply that supplies a processing gas into the processing container; and a microwave introducer that generates a plasma from the processing gas. The microwave introducer includes: a rectangular waveguide provided along a length direction of the processing container and including a plurality of slots that radiates microwaves; and a phase controller that is provided at an end of the rectangular waveguide and controls a phase of the microwaves propagating in the rectangular waveguide.

At a time of a wafer processing by a plasma processing apparatus, in order to prevent first radio frequency power from being diverted into an output line of a second radio frequency power supply via plasma, the plasma processing apparatus includes: a processing chamber in which a sample is plasma-processed; a sample stage that includes a first electrode and a second electrode disposed outside the first electrode and on which the sample is placed; a first radio frequency power supply configured to supply first radio frequency power to the first electrode via a first matching device and a first transmission path; and a second radio frequency power supply configured to supply second radio frequency power to the second electrode via a second matching device and a second transmission path. The plasma processing apparatus further includes a control device configured to control the first radio frequency power supply to supply the first radio frequency power to the sample stage when a preset value of the second matching device is a predetermined value. The predetermined value is a value that makes an impedance of the second transmission path an impedance at which the radio frequency power is not detected by the second matching device.