A sputtering method includes one or more sputtering processes. Each sputtering process includes in a first pre-sputtering phase, sputtering a target material on a baffle plate configured to shield a substrate; in a second pre-sputtering phase, sputtering a target material compound on the baffle plate; and in a main sputtering phase, sputtering the target material compound on the substrate. The first pre-sputtering phase is used to adjust a sputtering voltage for the main sputtering phase.

A deposition system is provided capable of cleaning itself by removing a target material deposited on a surface of a collimator. The deposition system in accordance with the present disclosure includes a substrate process chamber. The deposition includes a substrate pedestal in the substrate process chamber, the substrate pedestal configured to support a substrate, a target enclosing the substrate process chamber, and a collimator having a plurality of hollow structures disposed between the target and the substrate, a vibration generating unit, and cleaning gas outlet.

A PVD apparatus can be operated in a cleaning mode to remove material from an electrically conductive feature formed on a semiconductor substrate. The semiconductor substrate with the electrically conductive feature formed thereon is positioned on a substrate support in a chamber of the PVD apparatus. A shutter is deployed within the chamber to divide the chamber into a first compartment in which the semiconductor substrate and the substrate support are positioned, and a second compartment in which a target of the PVD apparatus is positioned. A first plasma is generated in the first compartment to remove material from the electrically conductive feature and a second plasma is simultaneously generated in the second compartment to clean the target.

A film forming system comprises a chamber, a stage, a holder, a cathode magnet, a shield, a first moving mechanism, and a second moving mechanism. The chamber provides a processing space. The stage is provided in the processing space and configured to support a substrate. The holder is configured to hold a target that is provided in the processing space. The cathode magnet is provided outside the chamber with respect to the target. The shield has a slit and is configured to block particles released from the target around the slit. The first moving mechanism is configured to move the shield between the stage and the target along a scanning direction substantially parallel to a surface of the substrate mounted on the stage. The second moving mechanism is configured to move the cathode magnet along the scanning direction.

Methods for depositing a dielectric oxide layer atop one or more substrates disposed in or processed through a PVD chamber are provided herein. In some embodiments, such a method includes: sputtering source material from a target assembly onto a first substrate while the source material is at a first erosion state and while providing a first amount of RF power to the target assembly to deposit a dielectric oxide layer onto a first substrate having a desired resistance-area; and subsequently sputtering source material from the target assembly onto a second substrate while the source material is at a second erosion state and while providing a second amount of RF power to the target assembly, wherein the second amount of RF power is lower than the first amount of RF power by a predetermined amount calculated to maintain the desired resistance-area.

The present disclosure provides a shielding mechanism and a thin-film-deposition equipment using the same, wherein the shielding mechanism includes two shield members and a driver. The driver includes a motor and a shaft seal. The motor interconnects the two shield members via the shaft seal, and such that to drive the two shield members to sway in opposite directions and to switch between an open state and a shielding state. Furthermore, each of the two shield members is formed with at least one cavity, for reducing weights thereof and loading of the motor and the driver.

A physical vapor deposition processing chamber is described. The processing chamber includes a target backing plate in a top portion of the processing chamber, a substrate support in a bottom portion of the processing chamber, a deposition ring positioned at an outer periphery of the substrate support and a shield. The substrate support has a support surface spaced a distance from the target backing plate to form a process cavity. The shield forms an outer bound of the process cavity. In-chamber cleaning methods are also described. In an embodiment, the method includes closing a bottom gas flow path of a processing chamber to a process cavity, flowing an inert gas from the bottom gas flow path, flowing a reactant into the process cavity through an opening in the shield, and evacuating the reaction gas from the process cavity.

The present disclosure provides a thin-film-deposition equipment with double-shaft shielding device, which includes a reaction chamber, a carrier and a double-shaft shielding device. The double-shaft shielding device includes a first-connecting arm, a second-connecting arm, a first-shield member, a second-shield member, a first driver and a second driver. The first driver is connected to the first-shield member via the first-connecting arm, and the second driver is connected to the second-shield member via the second-connecting arm, for respectively driving and swinging the two shield members to move in opposite directions via the two connecting arms. Thereby, during a cleaning process of the thin-film-deposition equipment, the two drivers swing the two shield members toward each other into a shielding state for covering the carrier, such that to effectively prevent removed pollutants from polluting the carrier during.

Disclosed herein are techniques directed toward a protective shutter for a charged particle microscope. An example apparatus at least includes a charged particle column and a focused ion beam (FIB) column, a gas injection nozzle coupled to a translation device, the translation device configured to insert the gas injection nozzle in close proximity to a stage, and a shutter coupled to the gas injection nozzle and arranged to be disposed between the sample and the SEM column when the gas injection nozzle is inserted in close proximity to the stage.

A deposition system is provided capable of controlling an amount of a target material deposited on a substrate and/or direction of the target material that is deposited on the substrate. The deposition system in accordance with the present disclosure includes a substrate process chamber. The deposition includes a substrate pedestal in the substrate process chamber, the substrate pedestal configured to support a substrate, a target enclosing the substrate process chamber, and a collimator having a plurality of hollow structures disposed between the target and the substrate, wherein a length of at least one of the plurality of hollow structures is adjustable.