A sputtering method includes one or more sputtering processes. Each sputtering process includes in a first pre-sputtering phase, sputtering a target material on a baffle plate configured to shield a substrate; in a second pre-sputtering phase, sputtering a target material compound on the baffle plate; and in a main sputtering phase, sputtering the target material compound on the substrate. The first pre-sputtering phase is used to adjust a sputtering voltage for the main sputtering phase.

Proposed are a method and a system for removing L-FC in a plasma etching process, in which L-FC, which is condensed on a wafer, an electrode, a substrate, a head, or the like, is removed by using infrared or ultraviolet rays in a plasma etching process using an L-FC precursor.

Aspects of the disclosure provided herein generally provide a substrate processing system that includes: a processing chamber including: a top plate having an array of process station openings disposed therethrough surrounding a central axis, a bottom plate having a first central opening, and a plurality of side walls between the top plate and the bottom plate; a plurality of heaters disposed in the top plate and the bottom plate and configured in a plurality of regions; and a system controller configured to independently control the plurality of heaters in each region.

A physical vapor deposition processing chamber is described. The processing chamber includes a target backing plate in a top portion of the processing chamber, a substrate support in a bottom portion of the processing chamber, a deposition ring positioned at an outer periphery of the substrate support and a shield. The substrate support has a support surface spaced a distance from the target backing plate to form a process cavity. The shield forms an outer bound of the process cavity. In-chamber cleaning methods are also described. In an embodiment, the method includes closing a bottom gas flow path of a processing chamber to a process cavity, flowing an inert gas from the bottom gas flow path, flowing a reactant into the process cavity through an opening in the shield, and evacuating the reaction gas from the process cavity.

Embodiments of the present disclosure disclose a physical vapor deposition (PVD) chamber and a PVD apparatus. The PVD chamber includes a chamber body. An upper electrode assembly is arranged in the chamber body. The upper electrode assembly includes a base plate assembly for carrying a magnetron, a backplate arranged at an interval with the base plate assembly, and a connection assembly that connects the base plate assembly to the backplate. The connection assembly is connected to the base plate assembly. The connection assembly is threadedly connected to the backplate, so that the interval between the base plate assembly and the backplate can be adjusted by moving the connection assembly relative to the backplate. The PVD chamber and the PVD apparatus of embodiments of the present disclosure can conveniently adjust a size of a target magnetic gap between the base plate assembly and the target according to requirements or actual conditions.

A deposition apparatus for cutting tools with a coating film capable of depositing the coating film in an appropriate temperature condition is provided. The deposition apparatus includes: a deposition chamber in which a coating film is formed on the cutting tools; a pre-treatment chamber and post-treatment chamber, each of which is connected to the deposition chamber through a vacuum valve; and a conveying line that conveys the cutting tools from the pre-treatment chamber to the post-treatment chamber going through the deposition chamber, the in-line deposition apparatus using a conveyed carrier on which rods supporting cutting tools are provided in a standing state along a conveying direction. The deposition chamber includes: a deposition region; a conveying apparatus; a heating region; and a carrier-waiting region.

The present disclosure relates to a portable plasma device which is convenient to carry and has excellent performance and is capable of simply, uniformly, and locally treating an inner surface of a microstructure such as a microwell plate by easily adjusting a plasma flame.

Embodiments of process shield for use in process chambers are provided herein. In some embodiments, a process shield for use in a process chamber includes: an annular body having an upper portion and a lower portion extending downward and radially inward from the upper portion, wherein the upper portion includes a plurality of annular trenches on an upper surface thereof and having a plurality of slots disposed therebetween to fluidly couple the plurality of annular trenches, wherein one or more inlets extend from an outer surface of the annular body to an outermost trench of the plurality of annular trenches.

The invention relates to a microwave driven plasma ion source (1) for ionising a sample to be ionised to sample ions, the microwave driven plasma ion source (1) including a sample intake (6) for inserting the sample from an outside of the microwave driven plasma ion source (1) into an inside (3) of the microwave driven plasma ion source (1); a microwave generator (10) for generating microwaves for generating a plasma (101) from a plasma gas (100); a plasma torch (20) providing a plasma torch orientation direction (29) having an inside (21) for housing (2) a process of generation of the plasma (101) from the plasma gas (100) and for housing a process of ionising the sample to the sample ions by exposing the sample to the plasma (101), wherein the plasma torch (20) comprises a torch outlet (22) for letting out the plasma (101) and the sample ions from the inside (21) of the plasma torch (20) essentially in the plasma torch orientation direction (29) to an outside of the plasma torch (20), the torch outlet (22) having a torch aperture. Furthermore the microwave driven plasma ion source (1, 201) includes a shielding (4) for shielding off the microwaves from passing from the inside (3) of the microwave driven plasma ion source (1) to the outside of the microwave driven plasma ion source (1), wherein the shielding (4) comprises a shielding outlet (5) for letting out the plasma (101) and the sample ions from the inside (3) of the microwave driven plasma ion source (1) essentially in the plasma torch orientation direction (29) to the outside of the microwave driven plasma ion source (1), the shielding outlet (5) having a shielding aperture. Thereby, the shielding outlet (5) is fluidly coupled to the torch outlet (22) for letting out the plasma (101) and the sample ions from the inside (21) of the plasma torch (20) essentially in the plasma torch orientation direction (29) to the outside of the microwave driven plasma ion source (1), wherein a size of the shielding aperture is less than 150%, preferably less than 125%, particular preferably less than 110% of a size of the torch aperture, wherein both the size of the shielding aperture and the size of the torch aperture are measured in units of area.

A shield encircles a sputtering target that faces a substrate support in a substrate processing chamber. The shield comprises an outer band having a diameter sized to encircle the sputtering target, the outer band having upper and bottom ends, and the upper end having a tapered surface extending radially outwardly and adjacent to the sputtering target. A base plate extends radially inward from the bottom end of the outer band. An inner band joined to the base plate at least partially surrounds a peripheral edge of a substrate support. The shield can also have a heat exchanger comprising a conduit with an inlet and outlet to flow heat exchange fluid therethrough.