In an embodiment, a system includes: a tool port of a semiconductor processing tool; a processing port with an internal processing port location and an external processing port location; a robot configured to move a die vessel between the internal processing port location and the tool port; and an actuator configured to move the die vessel between the internal processing port location and the external processing port location.

The heating apparatus includes a chamber configured to accommodate an object, a stage on which the object is placed and partitioning an internal space of the chamber into a lower region and an upper region, a heating mechanism configured to heat the object on the stage, and a gas supplier configured to supply gas to the lower region. The chamber has an outlet port being formed in the upper region. The stage includes a gap through which the gas supplied to the lower region by the gas supplier flows from the lower region to the upper region along a wall surface of the chamber. The method includes providing the object in the chamber, supplying the gas such that the gas flows from the lower region to the upper region along a wall surface of the chamber, and effecting a solder joint by increasing a temperature of the object.

In an embodiment, a system includes: a tool port of a semiconductor processing tool; a processing port with an internal processing port location and an external processing port location; a robot configured to move a die vessel between the internal processing port location and the tool port; and an actuator configured to move the die vessel between the internal processing port location and the external processing port location.

Provided are apparatuses for manufacturing semiconductor devices. An apparatus includes a reaction chamber having a stage to be loaded on a substrate, wherein set plasma is formed over the stage, a plurality of gas supply lines connected to the reaction chamber, flow controllers formed on the plurality of gas supply lines, respectively, to control the amount of a gas supplied to the reaction chamber, and a gas splitter configured to supply a mixed gas to the flow controllers. The apparatus may be a thin film deposition apparatus using plasma and further include a flow control unit connected to the gas splitter and a gas supply source connected to the flow control unit.

A mounting apparatus for manufacturing a semiconductor device by bonding a semiconductor chip (12) to a mounted object that is a substrate (30) or another semiconductor chip (12) is provided. The mounting apparatus includes: a stage (120) on which the substrate (30) is placed, a mounting head (124) that is capable of moving relative to the stage (120) and bonds the semiconductor chip (12) to the mounted object, and an irradiation unit (108 that irradiates, from a lower side of the stage (120), an electromagnetic wave transmitting through the stage and heating the substrate (30). The stage (120) has a first layer (122) formed on an upper surface side, and the first layer (122) has a greater thermal resistance in a plane direction than the thermal resistance in a thickness direction.

A mounting apparatus for manufacturing a semiconductor device by bonding a semiconductor chip (12) to a mounted object that is a substrate (30) or another semiconductor chip (12) is provided. The mounting apparatus includes: a stage (120) on which the substrate (30) is placed, a mounting head (124) that is capable of moving relative to the stage (120) and bonds the semiconductor chip (12) to the mounted object, and an irradiation unit (108 that irradiates, from a lower side of the stage (120), an electromagnetic wave transmitting through the stage and heating the substrate (30). The stage (120) has a first layer (122) formed on an upper surface side, and the first layer (122) has a greater thermal resistance in a plane direction than the thermal resistance in a thickness direction.

In an embodiment, a system includes: a tool port of a semiconductor processing tool; a processing port with an internal processing port location and an external processing port location; a robot configured to move a die vessel between the internal processing port location and the tool port; and an actuator configured to move the die vessel between the internal processing port location and the external processing port location.

An infrared reflow device includes an infrared heater and a heat conductor. Infrared radiation sources on the infrared heater are provided to emit a first infrared radiation of a first wavelength toward a semiconductor device. The heat conductor is placed between the infrared heater and the semiconductor device to absorb the first infrared radiation and radiate a second infrared radiation of a second wavelength toward the semiconductor device to reflow the semiconductor device. The second infrared radiation can be absorbed in a substrate of the semiconductor more efficiently than the first infrared radiation.

A bonded assembly may be formed by: providing a substrate and a semiconductor chip in a low-oxygen ambient having an oxygen partial pressure that is lower than 17 kPa; disposing the semiconductor chip on the substrate; performing a plasma treatment process on a copper-containing surface of a chip bonding pad on the semiconductor chip in the low-oxygen ambient by directing a plasma jet to the chip bonding pad; and attaching a bonding wire to the semiconductor chip and to the substrate such that a first end of the bonding wire is attached to the copper-containing surface and a second end of the bonding wire is attached to a substrate bonding pad on the substrate.