Patent classifications
H
ELECTRICITY
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H01
ELECTRIC ELEMENTS
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H01L
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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21/00
Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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H01L21/02
Manufacture or treatment of semiconductor devices or of parts thereof
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H01L21/04
the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
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H01L21/50
Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07; e.g. sealing of a cap to a base of a container
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H01L21/60
Attaching; or detaching; leads or other conductive members, to be used for carrying current to or from the device in operation
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H01L2021/60007
involving a soldering or an alloying process
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H01L2021/60022
using bump connectors, e.g. for flip chip mounting
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H01L2021/60097
Applying energy, e.g. for the soldering or alloying process
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H01L2021/60202
using a protective atmosphere, e.g. with forming or shielding gas
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H01L2021/60202

MANUFACTURING METHOD OF MONOCRYSTALLINE SILICON AND MONOCRYSTALLINE SILICON
20170338098 · 2017-11-23 · ·

A manufacturing method of a monocrystalline silicon includes: a growth step in which a seed crystal having contacted a silicon melt is pulled up and a crucible is rotated and raised to form a straight body of the monocrystalline silicon; a separating step in which the monocrystalline silicon is separated from the silicon melt; a state holding step in which the crucible and the monocrystalline silicon are lowered and the monocrystalline silicon is kept at a level at which an upper end of the straight body is located at the same level as an upper end of a heat shield or is located below the upper end of the heat shield for a predetermined time; and a draw-out step in which the monocrystalline silicon is drawn out of a chamber.

Manufacturing method of monocrystalline silicon and monocrystalline silicon
10490398 · 2019-11-26 · ·

A manufacturing method of a monocrystalline silicon includes: a growth step in which a seed crystal having contacted a silicon melt is pulled up and a crucible is rotated and raised to form a straight body of the monocrystalline silicon; a separating step in which the monocrystalline silicon is separated from the silicon melt; a state holding step in which the crucible and the monocrystalline silicon are lowered and the monocrystalline silicon is kept at a level at which an upper end of the straight body is located at the same level as an upper end of a heat shield or is located below the upper end of the heat shield for a predetermined time; and a draw-out step in which the monocrystalline silicon is drawn out of a chamber.

LASER ASSISTED BONDING METHOD
20250266391 · 2025-08-21 ·

A laser assisted bonding method comprises placing a semiconductor die on a substrate, wherein the semiconductor die has on its back surface solder bumps and on its front surface an anti-reflection layer for infrared laser; and irradiating an infrared laser beam to the semiconductor die through the anti-reflection layer, to reflow the solder bumps between the semiconductor die and the substrate via heat generated due to energy of the infrared laser beam absorbed by the semiconductor die, wherein the anti-reflection layer is configured to reduce reflection of the infrared laser beam from the semiconductor die.