Disclosed is a device including a first finger of a plurality of lead fingers of a lead frame connected to a first flag. A second finger of the plurality of lead fingers of the lead frame is connected to a second flag. A semiconductor die is coupled to the lead frame. An encapsulant covers the semiconductor die, the lead frame, and a first end of the plurality of lead fingers, and excludes the first flag and the second flag. The first flag and the second flag are separated and electrically isolated from one another by the encapsulant.

An electronic component includes a lead frame; a semiconductor chip arranged above the lead frame; and a connection layer sequence arranged between the lead frame and the semiconductor chip, wherein the connection layer sequence includes a first intermetallic layer including gold and indium or gold, indium and tin, a second intermetallic layer including indium and a titanium compound, indium and nickel, indium and platinum or indium and titanium, and a third intermetallic layer including indium and gold.

A method of forming an electronic device structure includes providing an electronic component having a first major surface, an opposing second major surface, a first edge surface, and an opposing second edge surface. A substrate having a substrate first major surface and an opposing substrate second major surface is provided. The second major surface of the first electronic component is placed proximate to the substrate first major surface and providing a conductive material adjacent the first edge surface of the first electronic component. The conductive material is exposed to an elevated temperature to reflow the conductive material to raise the first electronic component into an upright position such that the second edge surface is spaced further away from the substrate first major surface than the first edge surface. The method is suitable for providing electronic components, such as antenna, sensors, or optical devices in a vertical or on-edge.

A method of using a processing oven may include disposing at least one substrate in a chamber of the oven and activating a lamp assembly disposed above them to increase their temperature to a first temperature. A chemical vapor may be admitted into the chamber above the at least one substrate and an inert gas may be admitted into the chamber below the at least one substrate. The temperature of the at least one substrate may then be increased to a second temperature higher than the first temperature and then cooled down.

A method includes forming a leadframe assembly to have a pair of opposing sides, and having semiconductor die receiving portions extending between the opposing sides. The method also includes placing semiconductor dies on the leadframe assembly in the die receiving portions. Each die has a row of leads on each of two opposing sides of the die and a longitudinal axis parallel to the rows of leads. The longitudinal axis of each die is orthogonal to the opposing sides of the leadframe assembly. The method further includes applying mold compound to the semiconductor dies. The method includes punching through the leadframe assembly between the opposing sides using a first tool having a first tool longitudinal axis parallel to longitudinal axes of the dies.

A method of using a solder reflow oven can include disposing at least one substrate including solder in a chamber of the oven. The method can include decreasing a pressure of the chamber to a first pressure between about 0.1-50 Torr. After decreasing the pressure of the chamber, the temperature of the at least one substrate can be increased to a first temperature. Formic acid vapor can be admitted into the chamber above the at least one substrate while nitrogen is discharged into the chamber below the at least one substrate. The method can also include removing at least a portion of the formic acid vapor from the enclosure. After the removing step, the temperature of the at least one substrate can be further increased to a second temperature higher than the first temperature. The at least one substrate can be maintained at the second temperature for a first time. And then, the at least one substrate can be cooled.

A process for manufacturing surface-mount semiconductor devices, in particular of the Quad-Flat No-Leads Multi-Row type, comprising providing a metal leadframe, in particular a copper leadframe, which includes a plurality of pads, each of which is designed to receive the body of the device, the pads being separated from adjacent pads by one or more rows of wire-bonding contacting areas, outermost rows from among the one or more rows of wire-bonding contacting areas identifying, together with outermost rows corresponding to the adjacent pads, separation regions.

A method for manufacturing a semiconductor device includes: fixing a semiconductor chip to a first part of a leadframe; bonding one connector member to a first terminal of the semiconductor chip, a second terminal of the semiconductor chip, a second part of the leadframe, and a third part of the leadframe; forming a sealing member; and separating a first conductive part of the connector member and a second conductive part of the connector member by removing at least a section of the portion of the connector member exposed outside the sealing member, the first conductive part being bonded to the first terminal and the second part, the second conductive part being bonded to the second terminal and the third part.

A chip packaging method begins by fixing a chip to the top side of a substrate. The chip is then encapsulated in an encapsulant. After that, the encapsulant is drilled from its top side in order to have a through hole adjacent to the chip. Lastly, an area extending between the chip and the through hole and the hole wall of the through hole are plated with an electrically conductive metal to enable electrical connection between the chip and the substrate through the electrically conductive metal. The chip packaging method solves the problems of the conventional wire bonding method, simplifies the packaging process, and provides the packaged chips with high transmission efficiency.

A semiconductor processing apparatus includes a process chamber that defines an enclosure. The enclosure includes a substrate support configured to support a substrate and rotate the substrate about a central axis of the process chamber. The substrate support is also configured to move vertically along the central axis and position the substrate at multiple locations in the enclosure. The apparatus also includes one or more UV lamps configured to irradiate a top surface of the substrate supported on the substrate support.